Ko te ārai kua pania ki te silicon carbidea kīwāhanga e whakamahia ana i roto i ngā tukanga hangahanga semiconductor rerekē.Ka whakamahia e mātou tā mātou hangarau patent hei hanga i te ārai kua pania ki te silicon carbide metino teitei te parakore,paipaningaōritetangame te ora ratonga tino pai, mengā āhuatanga ātete matū teitei me te pumau wera.
Ko te Pūngao VET tekaihanga tūturu o ngā hua karāpeti me te karāpeti silicon kua whakaritea me te paninga CVD,ka taea te tukungā momongā wāhanga kua whakaritea mō te umanga semiconductor me te photovoltaic. ONō ngā umanga rangahau ā-rohe nui tō mātou tīma hangarau, ā, ka taea e rātou te whakarato i ngā otinga rauemi ngaio ake.māu.
Ka whakawhanake tonu mātou i ngā tukanga matatau hei whakarato i ngā rauemi matatau ake,mekua hangaia he hangarau motuhake kua patenttia, hei whakakaha ake i te hononga i waenga i te paninga me te papa, ā, hei whakaiti ake i te ngāwari o te wetewete.
Fngā āhuatanga o ā mātou hua:
1. Te ātete ki te waikura pāmahana teitei tae atu ki te 1700℃.
2. Te parakore teitei me tete ōritetanga o te wera
3. Ātete pai ki te waikura: waikawa, kawakore, tote me ngā matū waro.
4. He pakeke rawa, he mata kiato, he matūriki angiangi.
5. He roa ake te ora ratonga, he pakari ake
| CVD SiC薄膜基本物理性能 Ngā āhuatanga ā-tinana taketake o te CVD SiCpaninga | |
| 性质 / Taonga | 典型数值 / Uara Noa |
| 晶体结构 / Hanganga Karaihe | Wāhanga β FCC多晶，主要为（111）取向 |
| 密度 / Kiato | 3.21 karamu/cm³ |
| 硬度 / Te pakeketanga | 2500 维氏硬度（500g kawenga） |
| 晶粒大小 / Rahi o te Witi | 2~10μm |
| 纯度 / Te Parakore o te Matū | 99.99995% |
| 热容 / Te kaha wera | 640 J·kg-1·K-1 |
| 升华温度 / Te Pāmahana Whakatōtō | 2700℃ |
| 抗弯强度 / Kaha Whakapiko | 415 MPa RT 4-ira |
| 杨氏模量 / Te Tauwehenga o te Young | 430 Gpa 4pt piko, 1300℃ |
| 导热系数 / Te whakamahanalTe kawe i te hiko | 300W·m-1·K-1 |
| 热膨胀系数 / Te Whanuitanga Wera (CTE) | 4.5×10-6K-1 |
Nau mai haere mai ki tō mātou wheketere, kia kōrero anō tātou!
