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How to extend the service life of tantalum carbide coated products?
by admin on 24-07-26
Tantalum carbide coated products are a commonly used high-temperature material, characterized by high temperature resistance, corrosion resistance, wear resistance, etc. Therefore, they are widely used in industries such as aerospace, chemical, and energy. In order to ex...
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What is the difference between PECVD and LPCVD in semiconductor CVD equipment?
by admin on 24-07-24
Chemical vapor deposition (CVD) refers to the process of depositing a solid film on the surface of a silicon wafer through a chemical reaction of a gas mixture. According to the different reaction conditions (pressure, precursor), it can be divided into various equipment...
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Characteristics of silicon carbide graphite mold
by admin on 24-07-18
Silicon Carbide Graphite Mold Silicon carbide graphite mold is a composite mold with silicon carbide (SiC) as the base and graphite as the reinforcement material. This mold has excellent thermal conductivity, high temperature resistance, corrosion resistance an...
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Semiconductor process full process of photolithography
by admin on 24-07-16
The manufacturing of each semiconductor product requires hundreds of processes. We divide the entire manufacturing process into eight steps: wafer processing-oxidation-photolithography-etching-thin film deposition-epitaxial growth-diffusion-ion implantation. To help you...
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4 billion! SK Hynix announces semiconductor advanced packaging investment at Purdue Research Park
by admin on 24-07-09
West Lafayette, Indiana – SK hynix Inc. announced plans to invest nearly $4 billion to build an advanced packaging manufacturing and R&D facility for artificial intelligence products at Purdue Research Park. Establishing a key link in the U.S. semiconductor supply chain in West Lafayett...
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Laser technology leads the transformation of silicon carbide substrate processing technology
by admin on 24-07-08
1. Overview of silicon carbide substrate processing technology The current silicon carbide substrate processing steps include: grinding the outer circle, slicing, chamfering, grinding, polishing, cleaning, etc. Slicing is an important step in semiconductor substrate pr...
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Mainstream thermal field materials: C/C composite materials
by admin on 24-07-01
Carbon-carbon composites are a type of carbon fiber composites, with carbon fiber as the reinforcement material and deposited carbon as the matrix material. The matrix of C/C composites is carbon. Since it is almost entirely composed of elemental carbon, it has excellent high temperature resistan...
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Three major techniques for SiC crystal growth
by admin on 24-07-01
As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-temperature chemical vapor deposition (HTCVD). PVT is a well-established process for producing SiC sin...
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Third-generation semiconductor GaN and related epitaxial technology brief introduction
by admin on 24-06-28
1. Third-generation semiconductors The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of transistors and integrated circuit technology. The first-generation semiconductor materials laid the...
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