Iindaba

Ziziphi iingxaki zobugcisa zesithando sokukhulisa ikristale sesilicon carbide?
ngumlawuli nge-24-06-07
Isithando sokukhulisa ikristale sisixhobo esiphambili sokukhulisa ikristale yesilicon carbide. Sifana nesithando sokukhulisa ikristale seklasi yekristale yesilicon. Ulwakhiwo lwesithando sokukhulisa ikristale alunzima kangako. Siqulathe umzimba wesithando somlilo, inkqubo yokufudumeza, indlela yokudlulisela i-coil...
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Zithini iziphene zomaleko we-epitaxial we-silicon carbide
ngumlawuli nge-24-06-05
Itekhnoloji ephambili yokukhula kwezinto ze-SiC epitaxial okokuqala yitekhnoloji yokulawula iziphene, ingakumbi kwitekhnoloji yokulawula iziphene enokuphulukana nesixhobo okanye ukonakala kokuthembeka. Uphononongo lwendlela yokusebenza kweziphene ze-substrate ezifikelela kwi-epi...
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Itekhnoloji yokukhula kweenkozo ezimile ezi-oxidized kunye ne-epitaxial-Ⅱ
ngumlawuli nge-24-05-30
2. Ukukhula kwefilimu encinci ye-Epitaxial Le substrate inika umaleko wenkxaso ebonakalayo okanye umaleko oqhubayo kwizixhobo zamandla ze-Ga2O3. Umaleko olandelayo obalulekileyo ngumaleko wetshaneli okanye umaleko we-epitaxial osetyenziselwa ukumelana nombane kunye nokuthutha umthwali. Ukuze kwandiswe umbane oqhekekileyo kunye nokunciphisa uxinano...
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Iteknoloji yokukhula kweGallium oxide single crystal kunye ne-epitaxial
ngumlawuli nge-24-05-30
Ii-semiconductors ze-wide bandgap (WBG) ezimelwe yi-silicon carbide (SiC) kunye ne-gallium nitride (GaN) zifumene ingqalelo ebanzi. Abantu balindele lukhulu malunga namathuba okusetyenziswa kwe-silicon carbide kwizithuthi zombane kunye neegridi zamandla, kunye namathuba okusetyenziswa kwe-gallium...
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Zithini izithintelo zobugcisa kwi-silicon carbide?
ngumlawuli nge-24-05-22
Ubunzima bobuchwephesha kwii-wafers ze-silicon carbide ezivelisa ngobuninzi obuzinzileyo nezisebenza ngokuzinzileyo ziquka: 1) Ekubeni iikristale kufuneka zikhule kwindawo evalwe ngobushushu obuphezulu ngaphezu kwama-2000°C, iimfuno zolawulo lobushushu ziphezulu kakhulu; 2) Ekubeni i-silicon carbide ine ...
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Ziziphi izithintelo zobugcisa kwi-silicon carbide?
ngumlawuli nge-24-05-22
Isizukulwana sokuqala sezixhobo ze-semiconductor simelwe yi-silicon yendabuko (i-Si) kunye ne-germanium (i-Ge), ezisisiseko sokwenza iisekethe ezidibeneyo. Zisetyenziswa kakhulu kwii-transistors kunye nee-detectors ezine-voltage ephantsi, i-frequency ephantsi, kunye ne-low-power. Ngaphezulu kwe-90% ye-semiconductor prod...
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Yenziwa njani i-SiC micro powder?
ngumlawuli nge-24-05-13
Ikristale enye yeSiC yi-semiconductor yeQela IV-IV eyenziwe ngezinto ezimbini, iSi kunye neC, kwi-stoichiometric ratio ye-1:1. Ubulukhuni bayo bulandela idayimani kuphela. Indlela yokunciphisa ikhabhoni ye-silicon oxide ukulungiselela iSiC isekelwe kakhulu kule fomyula ilandelayo yempendulo yekhemikhali...
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Iileya ze-epitaxial zinceda njani izixhobo ze-semiconductor?
ngumlawuli nge-24-05-13
Imvelaphi yegama elithi epitaxial wafer Okokuqala, masenze ingcinga encinci ithandwe: ukulungiswa kwe-wafer kuquka amakhonkco amabini amakhulu: ukulungiswa kwe-substrate kunye nenkqubo ye-epitaxial. I-substrate yi-wafer eyenziwe ngezinto zekristale enye ye-semiconductor. I-substrate ingangena ngqo kwi-wafer manufacturi...
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Intshayelelo kwiteknoloji yokubeka ifilimu encinci ye-chemical vapor deposition (CVD)
ngumlawuli nge-24-05-06
Ukususwa koMphunga weKhemikhali (i-CVD) bubuchwepheshe obubalulekileyo bokubeka ifilimu encinci, obusetyenziswa rhoqo ekulungiseleleni iifilimu ezahlukeneyo ezisebenzayo kunye nezixhobo ezinomgangatho omncinci, kwaye busetyenziswa kakhulu kwimveliso ye-semiconductor nakwezinye iindawo. 1. Umgaqo wokusebenza we-CVD Kwinkqubo ye-CVD, isandulela segesi (esinye okanye...
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