Ukucoceka okuphezulu 8 Intshi yeSilicon Wafer

Ucoceko oluPhezulu 8 Intshi yeSilicon Wafer eFakelweyo Umfanekiso

Inkcazelo emfutshane:

I-VET Energy's high-purity-8-intshi ye-silicon wafers lukhetho lwakho olufanelekileyo lokwenziwa kwesemiconductor. Zenziwe kusetyenziswa itekhnoloji ephucukileyo, ezi ziqwenga zinomgangatho ogqwesileyo wekristale kunye nokuthe tyaba komphezulu, zizenza zilungele ukwenziwa kwezixhobo ezahlukeneyo ze-microelectronic.

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I-VET Energy's 8-intshi ye-silicon wafers zisetyenziswa ngokubanzi kumbane wamandla, abenzi boluvo, iisekethe ezidibeneyo kunye namanye amacandelo. Njengenkokeli kushishino lwesemiconductor, sizibophelele ekuboneleleni ngemveliso yeSi Wafer ekumgangatho ophezulu ukuhlangabezana neemfuno ezikhulayo zabathengi bethu.

Ukongeza kwi-Si Wafer, i-VET Energy ikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanya i-SiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl.

I-VET Energy inezixhobo zokuvelisa eziphambili kunye nenkqubo epheleleyo yokulawula umgangatho wokuqinisekisa ukuba i-wafer nganye ihlangabezana nemigangatho engqongqo yoshishino. Iimveliso zethu azinayo kuphela iipropathi ezigqwesileyo zombane, kodwa zinamandla omatshini kunye nokuzinza kwe-thermal.

I-VET Energy ibonelela abathengi ngezisombululo ze-wafer ezilungiselelwe, kubandakanywa ii-wafers ezinobungakanani obahlukeneyo, iintlobo kunye nokugxilwa kwe-doping. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi basombulule iingxaki ezahlukeneyo abadibana nazo ngexesha lenkqubo yemveliso.

IINGCACISO ZOKUPHAZAMISEKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
Into	nP	n-Pm	n-Nd	SI	SI
TTV(GBIR)	≤6um	≤6um
I-Bow(GF3YFCD)-Ixabiso elipheleleyo	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
Wafer Edge	Beveling

UPHANDO GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
	nP	n-Pm	n-Nd	SI	SI
Umphezulu Gqiba	Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP
Ubunzima boMphezulu	(10um x 10um) Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
IiChips zoMda	Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)
Iindenti	Akukho Ivumelekileyo
Imikrwelo(Si-Face)	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter			Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter
Iintanda	Akukho Ivumelekileyo
Ukungabandakanywa kuMda	3mm