Ama-silicon wafers we-VET Energy angu-8 inch asetshenziswa kakhulu kuma-electronics, izinzwa, amasekethe ahlanganisiwe neminye imikhakha. Njengomholi embonini ye-semiconductor, sizibophezele ekuhlinzekeni ngemikhiqizo ye-Si Wafer esezingeni eliphezulu ukuze sihlangabezane nezidingo ezikhulayo zamakhasimende ethu.
Ngaphezu kwe-Si Wafer, i-VET Energy iphinde ihlinzeke ngezinhlobonhlobo zezinto ezisetshenziswayo zesemiconductor, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll. Umugqa wethu womkhiqizo uphinde uhlanganise izinto ezintsha ze-bandgap semiconductor ezifana ne-Gallium Oxide Ga2O3 kanye ne-AlN Wafer, ehlinzeka ngokusekela okuqinile kokuthuthukiswa kwamadivayisi kagesi alandelayo.
I-VET Energy inemishini yokukhiqiza ethuthukisiwe kanye nesistimu yokuphatha ikhwalithi ephelele ukuze kuqinisekiswe ukuthi i-wafer ngayinye ihlangabezana nezindinganiso eziqinile zemboni. Imikhiqizo yethu ayinayo kuphela izinto ezinhle kakhulu zikagesi, kodwa futhi inamandla amahle emishini nokuzinza kokushisa.
I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngokwezifiso ze-wafer, okuhlanganisa amawafa anosayizi abahlukene, izinhlobo kanye nokugxila kwe-doping. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukusiza amakhasimende axazulule izinkinga ezihlukahlukene okuhlangatshezwane nazo phakathi nenqubo yokukhiqiza.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
| Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
| nP | n-Pm | n-IHu | SI | SI | |
| I-TTV(GBIR) | ≤6um | ≤6um | |||
| Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
| I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
| I-LTV(SBIR)-10mmx10mm | <2μm | ||||
| I-Wafer Edge | Beveling | ||||
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
| Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
| nP | n-Pm | n-IHu | SI | SI | |
| I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
| I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
| Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
| Izindebe | Akukho Okuvunyelwe | ||||
| Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | Ubuningi.≤5,Okuqoqekile | ||
| Imifantu | Akukho Okuvunyelwe | ||||
| Ukukhishwa komkhawulo | 3mm | ||||
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