I-Graphite Crucible ecocekileyo kakhulu

I-VET Energy igxile ekuveliseni izinto ezikumgangatho ophezuluIsiqwenga seGraphite esiHlanjululweyo esiPhakamileyoYenzelwe ukusetyenziswa kwezixhobo ze-semiconductor kunye nezixhobo eziphambili. Yenziwe nge-graphite ye-isostatic yengqolowa ecolekileyo kakhulu kwaye icociwe ngeenkqubo zokucoca i-halogen ezishushu kakhulu, ii-crucibles zethu ze-graphite zibonelela ngozinzo oluphezulu lobushushu, amanqanaba aphantsi okungcola, kunye nokuhambelana okubalaseleyo phantsi kweemeko zokusebenza ezinzima.

Isetyenziswa kakhulu ekukhuleni kwekristale yeSiC, kwimveliso yekristale yeGaN, kwimveliso yezinto ze-epitaxial, nakwi-ceramic sintering ephucukileyo, kwi-High-PurityIsostatic Graphite Cruciblezidlala indima ebalulekileyo ekuqinisekiseni umgangatho wekristale, uzinzo lwenkqubo, kunye nokusebenza kakuhle kwemveliso kuyo yonke imveliso ye-semiconductor yanamhlanje.

Yintoni i-High-Purity Isostatic Graphite Crucible?

I-High-Purity Isostatic Graphite Crucible sisikhongozeli esenziwe ngobuchule obuchanekileyo esenziwe ngezinto ze-isotropic graphite ezenziwe ngenkqubo yokucinezela i-isostatic. Xa kuthelekiswa neemveliso ze-graphite ezibunjiweyo zesiqhelo, i-isostatic graphite inikezela ngezi zinto zilandelayo:

● Ulwakhiwo olufanayo kuzo zonke iindlela

● Uxinano oluphezulu kunye namandla oomatshini

● Ukuqhuba okuphezulu kobushushu

● Ukumelana nokutshatyalazwa kobushushu okugqwesileyo

● Ubunzima obuphantsi bokuvuleka

● Ubungakanani bokungcola obuphantsi kakhulu

Emva kokucocwa, umxholo wothuthu unokulawulwa ngaphantsi kwe-5 ppm, kwaye ezinye izinto ezikumgangatho we-semiconductor zifikelela kumanqanaba okungcola angaphantsi kwe-3 ppm.

Ezi mpawu zenza iiHigh-Purity Isostatic Graphite Crucibles zilungele iinkqubo zobushushu obuphezulu ezidlula i-2,000°C, apho ulawulo longcoliseko kunye nokufana kobushushu kubalulekile.

Iindima kwiMveliso yeSemiconductor

Kwi-Silicon Carbide (SiC) crystal growth esebenzisa inkqubo ye-Physical Vapor Transport (PVT), ii-graphite crucibles zisebenza njengesitya sokukhusela izinto ezivela kuyo kunye nenxalenye ebalulekileyo yenkqubo yentsimi yobushushu. Ukusebenza kumaqondo obushushu aqhele ukugqitha i-2,200°C, i-crucible kufuneka igcine uzinzo olulinganayo ngelixa ixhasa i-gradients echanekileyo yobushushu efunekayo ekuthuthweni komphunga kunye nokwakheka kwekristale. Ubumsulwa kunye nesakhiwo se-isotropic se-graphite zichaphazela ngokuthe ngqo ukufakwa kokungcola, ukusasazwa kobushushu, izinga lokukhula kwekristale, kunye nokuveliswa kweziphene.

Indima yeHigh-Purity Isostatic Graphite Crucibles idlulela ngaphaya kokuveliswa kweSiC ukuya kwiiteknoloji zokukhula kwekristale zeGallium Nitride (GaN) eziphambili. Nokuba zisetyenziswa kwi-HVPE, ukukhula kwe-flux, okanye iindlela ezintsha zokuvelisa ikristale eninzi, ii-graphite crucibles zibonelela ngendawo ezinzileyo yobushushu obuphezulu exhasa ukuthuthwa kwezinto kunye nokwakheka kwekristale ngelixa zinciphisa umngcipheko wongcoliseko.

Kwimveliso yezinto ze-semiconductor epitaxial, kuquka i-SiC epitaxy, ukukhula kwekristale ye-AlN, kunye nokucubungula i-compound semiconductor, ii-graphite crucibles zinegalelo ekufaneni kobushushu kunye nokuphindaphinda kwenkqubo. Ukuqhuba kwazo ubushushu okugqwesileyo kunye nokumelana noxinzelelo lobushushu kwenza ukusebenza kuzinzile phantsi kweemeko ezinzima zenkqubo, kuxhasa ulawulo oluchanekileyo lokuphuma komphunga, i-sublimation, kunye neendlela zokubeka.

IiCrucibles zeGraphite eziPhucukileyo kakhulu nazo zidlala indima ebalulekileyo ekuvelisweni kwezinto eziphambili zeseramikhi kunye neepowders zesizukulwana sesithathu se-semiconductor. Ngexesha lokusila i-silicon carbide, i-aluminium nitride, i-boron nitride, kunye nezinye iiseramikhi ezisebenza kakuhle, i-crucible ibonelela ngendawo ezinzileyo ngokweekhemikhali kwaye ifana neyobushushu ekhuthaza uxinano ngelixa inciphisa ungcoliseko. Uphuculo oluvelayo kubunyulu bezinto, ukuqhuba kobushushu, kunye nokusebenza koomatshini kubalulekile kwizicelo ezisusela kwizixhobo ze-semiconductor ukuya ekupakishweni kwe-elektroniki enamandla aphezulu.

Iindlela Zoshishino Nophuhliso Lwexesha Elizayo

Njengoko ii-semiconductors ze-wide-bandgap ziqhubeka nokutshintsha ishishini le-elektroniki yamandla, imfuno yezixhobo ze-graphite eziphambili iyanda ngokukhawuleza.

Iimfuneko zoBumsulwa obuphezulu kakhulu

Usetyenziso lwe-semiconductor kwixesha elizayo lufuna amanqanaba okungcola angaphantsi kwe-5 ppm kwaye, kwezinye iimeko, asondele kwi-1 ppm ukuxhasa ubungakanani obukhulu bekristale kunye noxinano oluphantsi lweziphene.

Ubuchwepheshe bokugquma

Iingubo eziphezulu zomphezulu zisetyenziswa ngakumbi kwii-graphite crucibles, kuquka:

● Ukwaleka kweSilicon Carbide (SiC)

● Ukwaleka kweTantalum Carbide (TaC)

● Ukwaleka kwePyrolytic Carbon (PyC)

Ezi ngubo ziyaphucula:

● Ukumelana nokugqwala

● Uzinzo lobushushu

● Ukusebenza ubomi bonke

● Ucoceko lwenkqubo

● Iidizayini ezinkulu zeCrucible

Ukuthengiswa kwe:

● Iiwafer zeSiC eziziisentimitha ezi-8

● Ii-substrates ezinkulu zeGaN

● Izixhobo ze-semiconductor zamandla eziphambili

iqhuba uphuhliso lwee-crucibles ze-graphite ezinkulu nezizinzileyo ngokwemilinganiselo ezikwaziyo ukugcina ulawulo oluchanekileyo lobushushu kwimijikelo yemveliso eyandisiweyo.