Igikoresho cya Graphite Isostatic Crucible gifite isuku nyinshi

Ibisobanuro bigufi:

VET Energy's High-Purity Isostatic Graphite Crucibles yakozwe kugira ngo ihuze n'ibisabwa bikomeye byo gukura kwa kristu ya semiconductor no gutunganya ibikoresho mu bushyuhe bwinshi. Yakozwe muri graphite ya isostatic y'ingano nziza cyane kandi isukurwa ku bipimo bya semiconductor. Ikoreshwa cyane mu gukura kwa kristu ya SiC binyuze mu nzira ya PVT, gukora kristu ya GaN, epitaxy ya semiconductor, na sintering ya keramik iteye imbere, kristu zacu za graphite zikora nk'ibice by'ingenzi by'ubushyuhe bifasha mu kugenzura ubushyuhe neza, kugabanya ubwandu, no kudahungabana kw'imikorere.


Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

VET Energy inzobere mu gukora ibintu bifite ireme ry’ikirengaIgikoresho cya Graphite Isostatic Crucible gisukuye cyanes yagenewe gukoreshwa mu bikoresho bya semiconductor n'ibigezweho. Yakozwe muri grafiti nziza cyane kandi isukurwa binyuze mu buryo bwo gusukura halogen mu bushyuhe bwinshi, ibyuma byacu bya grafiti bitanga ubushyuhe budasanzwe, urwego ruto rw'umwanda, hamwe n'uburyo buhamye mu mikorere mu bihe bikomeye.

Ikoreshwa cyane mu gukura kwa kristu ya SiC, gukora kristu ya GaN, gukora ibikoresho bya epitaxial, no gukora sintering igezweho ya ceramic, High-PurityIsostatic Graphite Cruciblebigira uruhare runini mu kwemeza ubuziranenge bwa kristale, guhagarara neza mu mikorere, no kunoza umusaruro mu nganda zigezweho za semiconductor.

Igikoresho cya Graphite Isostatic Crucible gikozwe mu buryo bwa High-Purity ni iki?

Igikoresho cya Graphite Isostatic Crucible gikozwe mu buryo bunoze kandi bukozwe mu bikoresho bya graphite ya isotropic byakozwe binyuze mu nzira yo gukanda isostatic. Ugereranyije n'ibicuruzwa bisanzwe bya graphite, graphite ya isostatic itanga:

● Imiterere mito isanzwe mu mpande zose

● Ubucucike bwinshi n'imbaraga za mekanike

● Uburyo bwo gutwara ubushyuhe buhanitse cyane

● Ubudahangarwa bwiza cyane ku bushyuhe

● Ubushobozi buke bwo gupfundika

● Isuku nke cyane

Nyuma yo gusukura, ubusanzwe ivu rishobora kugenzurwa riri munsi ya 5 ppm, hamwe n'ibikoresho bimwe na bimwe byo mu rwego rwa semiconductor bigera ku rwego rw'umwanda ruri munsi ya 3 ppm.

Ibi biranga bituma High-Purity Isostatic Graphite Crucibles iba nziza cyane mu bikorwa by'ubushyuhe buri hejuru ya 2,000°C, aho kugenzura ubwandu no guhuza ubushyuhe ari ngombwa.

Inshingano mu gukora ibikoresho bya semiconductor

Mu gukura kwa kristalo ya Silicon Carbide (SiC) hakoreshejwe uburyo bwo gutwara umwuka ushyushye (PVT), ibyuma bya graphite bikora nk'igikoresho gifata ibikoresho bikomokaho ndetse n'igice cy'ingenzi cy'uburyo bw'ubushyuhe. Bikora ku bushyuhe busanzwe burenga 2,200°C, icyuma kigomba kugumana ubuziranenge mu buryo buhamye mu gihe gishyigikira ubushyuhe bukenewe kugira ngo umwuka uhinduke no gukora kristalo. Ubuziranenge n'imiterere ya graphite bigira ingaruka ku buryo butaziguye ku ishyirwa ry'umwanda, gukwirakwira k'ubushyuhe, igipimo cyo gukura kwa kristalo, no gukora inenge.

Uruhare rw'ibikoresho byo mu bwoko bwa High-Purity Isostatic Graphite Crucibles rurenze inganda za SiC rugera no ku ikoranabuhanga rigezweho ryo gukuraho kristu za Gallium Nitride (GaN). Byaba bikoreshwa muri HVPE, gukuraho kristu, cyangwa uburyo bushya bwo gukora kristu nyinshi, ibikoresho byo mu bwoko bwa graphite bitanga ibidukikije bihamye kandi bihamye bishyigikira ubwikorezi bw'ibintu no gukora kristu mu gihe bigabanya ibyago byo kwandura.

Mu gukora ibikoresho bya epitaxial bya semiconductor, harimo SiC epitaxy, AlN crystal growth, hamwe no gutunganya semiconductor bya compound, grafiti crucibles zigira uruhare mu guhuza ubushyuhe no gusubiramo inzira. Uburyo bwazo bwiza bwo gutwara ubushyuhe no kurwanya shock y'ubushyuhe bituma imikorere ihoraho mu bihe bikomeye, bigafasha mu kugenzura neza uburyo bwo guhumeka, sublimation, no gushyiramo ibintu.

Ibikoresho bya Graphite Isostatic Crucibles bifite uruhare runini mu gukora ibikoresho bya keramike bigezweho n'ifu ya semiconductor yo mu gisekuru cya gatatu. Mu gihe cyo gutwika silicon carbide, aluminiyumu nitride, boron nitride, n'ibindi bikoresho bya keramike bigezweho, ibi bikoresho bitanga ibidukikije bihamye kandi bihuje n'ubushyuhe, bigatuma ubushyuhe burushaho kwiyongera mu gihe bigabanya ubwandu. Iterambere ry'uburyo ibikoresho bisukuye, ubushobozi bwo gutwara ubushyuhe, n'imikorere ya mekanike ni ingenzi cyane ku bikorwa bitandukanye kuva ku bikoresho bya semiconductor kugeza ku bikoresho by'ikoranabuhanga bipfunyikamo ibikoresho byinshi.

Icyerekezo cy'inganda n'iterambere ry'ejo hazaza

Mu gihe imashini zikoresha ingufu za "wide-band-gap" zikomeje guhindura inganda z'amashanyarazi, icyifuzo cy'imashini zikoresha grafiti zigezweho kiriyongera cyane.

Ibisabwa ku isuku iri hejuru cyane

Gukoresha semiconductor mu gihe kizaza bisaba ko urwego rw'umwanda ruri munsi ya 5 ppm, kandi rimwe na rimwe, rugera kuri 1 ppm kugira ngo rushyigikire ingano nini za kristu n'ubucucike buke bw'ibise.

Ikoranabuhanga ryo gusiga

Imitako yo hejuru igezweho irushaho gukoreshwa ku bikoresho bya grafiti, harimo:

● Ukwisiga kwa Silicon Carbide (SiC)

● Tantalum Carbide (TaC) Coating

● Ukwisiga kwa pyrolytic carbone (PyC)

Izi myenda yongera:

● Ubudahangarwa bw'inkongi

● Gukomera ku bushyuhe

● Imikorere y'ubuzima bwose

● Isuku mu mikorere

● Imiterere minini y'ibikoresho byo mu bwoko bwa Crucible

Gucuruza:

● Udupaki twa SiC twa santimetero 8

● Ibice binini bya GaN

● Ibikoresho bya semiconductor bigezweho

irimo guteza imbere ibyuma binini kandi bihamye bya grafiti bishobora gucunga neza ubushyuhe mu gihe kirekire cy'umusaruro.


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