Mai ɗaukar SiC Coating Carrier Ga RTP/RTA muhimmin sashi ne da ake amfani da shi a cikin tsarin kera semiconductor wanda ake kira Rapid Thermal Processing & Annealing, muna amfani da fasaharmu mai lasisi don yin mai ɗaukar silicon carbide tare da tsarki mai yawa, daidaiton shafi mai kyau da kuma kyakkyawan rayuwar sabis, da kuma juriya ga sinadarai da kwanciyar hankali na zafi.
Fasaloli na samfuranmu:
1. Juriyar iskar shaka mai zafi har zuwa 1700℃.
2. Tsarkakakken tsarki da daidaiton zafi
3. Kyakkyawan juriya ga tsatsa: acid, alkali, gishiri da kuma sinadaran halitta.
4. Babban tauri, ƙaramin surface, ƙananan barbashi.
5. Tsawon rai da kuma tsawon rai
| CVD SiC薄膜基本物理性能 Abubuwan asali na zahiri na CVD SiCshafi | |
| 性质 / Kadara | 典型数值 / Darajar da Aka Saba |
| 晶体结构 / Tsarin Crystal | Matakin FCC β多晶，主要为（111) 取向 |
| 密度 / Yawan yawa | 3.21 g/cm³ |
| 硬度 / Tauri | 2500 维氏硬度 (500g kaya) |
| 晶粒大小 / Size na hatsi | 2 ~ 10μm |
| 纯度 / Tsarkakewar Sinadarai | 99.99995% |
| 热容 / Ƙarfin Zafi | 640 J·kg-1·K-1 |
| 升华温度 / Zafin Sublimation | 2700℃ |
| 抗弯强度 / Ƙarfin Lankwasawa | 415 MPa RT maki 4 |
| 杨氏模量 / Matashin Young | 430 GPA lanƙwasa 4pt, 1300℃ |
| 导热系数 / ThermalGudanar da wutar lantarki | 300W·m-1·K-1 |
| 热膨胀系数 / Faɗaɗawar Zafi (CTE) | 4.5×10-6K-1 |
VET Energy ita ce ainihin masana'antar samfuran graphite da silicon carbide na musamman tare da rufin daban-daban kamar murfin SiC, murfin TaC, murfin carbon mai gilashi, murfin carbon pyrolytic, da sauransu, wanda zai iya samar da sassa daban-daban na musamman don masana'antar semiconductor da photovoltaic.
Ƙungiyarmu ta fasaha ta fito ne daga manyan cibiyoyin bincike na cikin gida, waɗanda za su iya samar muku da ƙarin mafita na kayan aiki na ƙwararru.
Muna ci gaba da haɓaka hanyoyin ci gaba don samar da kayan aiki masu inganci, kuma mun yi amfani da fasahar mallakar fasaha ta musamman, wadda za ta iya sa haɗin da ke tsakanin murfin da substrate ya yi ƙarfi kuma ya zama ba shi da sauƙin rabuwa.
Barka da zuwa ka ziyarci masana'antarmu, bari mu ci gaba da tattaunawa!
