I-Silicon Carbide Coated Wafer Susceptor Disc

Isithombe Esivelele Sediski Ye-Silicon Carbide Embozwe Nge-Wafer Susceptor

Incazelo emfushane:

I-VET Energy silicon carbide coated wafer susceptor disc iwumkhiqizo osebenza kahle kakhulu owenzelwe ukunikeza ukusebenza okulinganayo nokuthembekile isikhathi eside. Inokumelana okuhle kakhulu nokushisa kanye nokufana kokushisa, ubumsulwa obuphezulu, ukumelana nokuguguleka, okwenza kube yisisombululo esifanele sezinhlelo zokusebenza zokucubungula i-wafer.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-Silicon Carbide Wafer Disc iyisici esibalulekile esisetshenziswa ezinqubweni ezahlukene zokukhiqiza ama-semiconductor. Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza i-silicon carbide ibe yidiski ephephile kakhulu ngobumsulwa obuphezulu kakhulu, ukufana okuhle kokumboza kanye nokuphila kahle kwenkonzo, kanye nokumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.

I-VET Energy ingumkhiqizi wangempela wemikhiqizo ye-graphite neye-silicon carbide eyenziwe ngokwezifiso enezembozo ezahlukene njenge-SiC, i-TaC, i-pyrolytic carbon, i-glassy-carbon, njll., ingahlinzeka ngezingxenye ezahlukahlukene ezenziwe ngokwezifiso zemboni ye-semiconductor kanye ne-photovoltaic. Ithimba lethu lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, lingakunikeza izixazululo zezinto zobungcweti ezengeziwe.

Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu, futhi sisebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwengubo kanye ne-substrate kube kuqinile futhi kungahlukani kakhulu.

Fizici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kuze kufike ku-1700℃.
2. Ubumsulwa obukhulu kanyeukufana kokushisa
3. Ukumelana okuhle kakhulu nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
4. Ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo sekristalu	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuningi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Usayizi Wokusanhlamvu	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / Izinga Lokushisa Elingaphansi	2700℃
抗弯强度 / Amandla Okugobeka	I-415 MPa RT amaphuzu angu-4
杨氏模量 / I-Young's Modulus	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwanda Kokushisa (i-CTE)	4.5×10^-6K^-1