I-Silicon Carbide Epitaxial Sheet Tray Ye-Semiconductor Epitaxial Furnace

Ithreyi Yeshidi Le-Silicon Carbide Epitaxial Ye-Semiconductor Epitaxial Furnace Isithombe Esifakiwe

Incazelo emfushane:

I-VET Energy Silicon Carbide Epitaxial Sheet Tray iwumkhiqizo osebenza kahle kakhulu owenzelwe ukunikeza ukusebenza okulinganayo nokuthembekile isikhathi eside. Inokumelana okuhle kakhulu nokushisa kanye nokufana kokushisa, ubumsulwa obuphezulu, ukumelana nokuguguleka, okwenza kube yisisombululo esifanele sezinhlelo zokusebenza zokucubungula i-wafer.

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Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Ithreyi yeshidi le-silicon carbide iyisici esibalulekile esisetshenziswa ezinqubweni ezahlukene zokukhiqiza i-semiconductor. Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza ithreyi yeshidi le-silicon carbide ngobumsulwa obukhulu kakhulu, ukufana okuhle kokumboza kanye nokuphila kahle kwenkonzo, kanye nokumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.

I-VET Energy ingumkhiqizi wangempela wemikhiqizo ye-graphite neye-silicon carbide eyenziwe ngokwezifiso enezembozo ezahlukene njenge-SiC, i-Tac, i-pyrolytic carbon, i-glassy carbon, njll., ingahlinzeka ngezingxenye ezahlukahlukene ezenziwe ngokwezifiso zemboni ye-semiconductor kanye ne-photovoltaic. Ithimba lethu lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, lingakunikeza izixazululo zezinto zobungcweti ezengeziwe.

Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu, futhi sisebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwesembozo kanye nesisekelo kube kuqinile futhi kungahlukani kakhulu.

Izici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kuze kufike ku-1700℃.
2. Ubumsulwa obuphezulu kanye nokufana okushisayo
3. Ukumelana okuhle kakhulu nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
4. Ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo sekristalu	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuningi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Usayizi Wokusanhlamvu	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / Izinga Lokushisa Elingaphansi	2700℃
抗弯强度 / Amandla Okugobeka	I-415 MPa RT amaphuzu angu-4
杨氏模量 / I-Modulus yentsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwanda Kokushisa (i-CTE)	4.5×10^-6K^-1