Silicon Carbide (SiC) Epitaxial Wafer

VET Energy silicon carbide (SiC) epitaxial wafer babban aiki ne mai fa'ida mai fa'ida mai ɗaukar hoto tare da kyakkyawan juriya na zafin jiki, mitar mita da manyan halaye masu ƙarfi. Yana da manufa mai mahimmanci don sabon ƙarni na na'urorin lantarki. VET Energy yana amfani da fasahar Epitaxial na MOCVD na ci gaba don haɓaka manyan yadudduka na SiC epitaxial a kan sifofin SiC, yana tabbatar da kyakkyawan aiki da daidaiton wafer.

Mu Silicon Carbide (SiC) Epitaxial Wafer yana ba da kyakkyawar dacewa tare da nau'ikan kayan aikin semiconductor ciki har da Si Wafer, SiC Substrate, SOI Wafer, da SiN Substrate. Tare da ƙaƙƙarfan Layer na epitaxial, yana goyan bayan matakai na ci gaba kamar haɓaka Epi Wafer da haɗin kai tare da kayan kamar Gallium Oxide Ga2O3 da AlN Wafer, yana tabbatar da amfani mai amfani a cikin fasaha daban-daban. An ƙera shi don dacewa da tsarin sarrafa kaset na masana'antu, yana tabbatar da ingantaccen aiki da ingantaccen aiki a cikin mahallin ƙirƙira semiconductor.

Layin samfurin VET Energy baya iyakance ga wafers na SiC epitaxial. Mun kuma samar da wani fadi da kewayon semiconductor substrate kayan, ciki har da Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, da dai sauransu Bugu da kari, muna kuma rayayye tasowa sabon fadi bandgap semiconductor kayan, kamar Gallium Oxide Ga2O3 da AlN Wafer, don saduwa da nan gaba ikon lantarki masana'antu ta bukatar high yi na'urorin.