I-Silicon Carbide (SiC) i-Epitaxial Wafer

I-VET Energy silicon carbide (SiC) i-epitaxial wafer iyisici se-semiconductor ye-bandgap ephezulu esebenza kahle kakhulu enokumelana nezinga lokushisa eliphakeme kakhulu, imvamisa ephezulu nezici zamandla aphezulu. Kuyi-substrate ekahle yesizukulwane esisha samadivayisi kagesi kagesi. I-VET Energy isebenzisa ubuchwepheshe obuthuthukisiwe be-MOCVD be-epitaxial ukuze kukhule izendlalelo ze-SiC epitaxial zekhwalithi ephezulu kuma-substrates e-SiC, iqinisekisa ukusebenza okuhle kakhulu nokuvumelana kwe-wafer.

I-Silicon Carbide (SiC) yethu ye-Epitaxial Wafer inikezela ngokuhambisana okuhle kakhulu nezinhlobonhlobo zezinto zokwakha ze-semiconductor ezihlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, ne-SiN Substrate. Ngongqimba oluqinile lwe-epitaxial, isekela izinqubo ezithuthukisiwe ezifana nokukhula kwe-Epi Wafer nokuhlanganiswa nezinto ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer, iqinisekisa ukusetshenziswa okuhlukahlukene kubo bonke ubuchwepheshe obuhlukahlukene. Idizayinelwe ukuhambisana nezinhlelo zokuphatha amakhasethi ezisezingeni lemboni, iqinisekisa ukusebenza okusebenzayo nokulula ezindaweni zokwenziwa kwe-semiconductor.

Ulayini womkhiqizo we-VET Energy awukhawulelwe kuma-wafers e-SiC epitaxial. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll. Ngaphezu kwalokho, sithuthukisa futhi ngenkuthalo izinto ezintsha ze-bandgap semiconductor ze-semiconductor, njenge-Gallium Oxide Ga2O3 ne-AlN Wafer, ukuze kuhlangatshezwane nesidingo sesikhathi esizayo semishini kagesi esebenza ngogesi.