Silicon Carbide (SiC) Epitaxial Wafer

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Iyo Silicon Carbide (SiC) Epitaxial Wafer kubva kuVET Energy ndeyepamusoro-inoshanda substrate yakagadzirirwa kusangana nezvinodiwa zvechizvarwa chinotevera simba uye RF zvishandiso. VET Energy inova nechokwadi chekuti epitaxial wafer yega yega inogadzirwa zvine hungwaru kuti ipe yepamusoro yekupisa conductivity, breakdown voltage, uye mutakuri wekufamba, zvichiita kuti ive yakanakira maapplication akadai semota dzemagetsi, 5G kutaurirana, uye yakakwirira-inoshanda magetsi emagetsi.

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VET Energy silicon carbide (SiC) epitaxial wafer ndeyepamusoro-inoshanda yakafara bandgap semiconductor zvinhu zvine yakanakisa kupisa tembiricha kuramba, yakakwirira frequency uye yakakwirira simba maitiro. Iyo yakanaka substrate yechizvarwa chitsva chemagetsi zvigadzirwa zvemagetsi. VET Energy inoshandisa advanced MOCVD epitaxial tekinoroji kukura-yemhando yepamusoro SiC epitaxial layers paSiC substrates, ichiva nechokwadi chekushanda kwakanaka uye kusachinja-chinja kwewafer.

Yedu Silicon Carbide (SiC) Epitaxial Wafer inopa yakanakisa kuenderana neyakasiyana semiconductor zvinhu zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, uye SiN Substrate. Iine yakasimba epitaxial layer, inotsigira maitiro epamberi senge Epi Wafer kukura uye kubatanidzwa nezvinhu zvakaita seGallium Oxide Ga2O3 uye AlN Wafer, kuve nechokwadi chekushandiswa kwakasiyana-siyana mumatekinoroji akasiyana. Yakagadzirwa kuti ienderane neindasitiri-yakajairwa Cassette inobata masisitimu, inova nechokwadi chekushanda uye kurongeka mashandiro munzvimbo dze semiconductor yekugadzira.

VET Energy's chigadzirwa mutsara haina kuganhurirwa kuSiC epitaxial wafers. Isu tinopawo zvakasiyana-siyana zve semiconductor substrate zvinhu, zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, etc. Pamusoro pezvo, tiri kushingairawo kugadzira zvitsva zvakafara bandgap semiconductor zvinhu, zvakadai seGallium Oxide Ga2O3 neAlN Wafer, kuti tisangane neramangwana rinodiwa remagetsi epamusoro ezvigadzirwa zvemagetsi.

WAFERING SECIFICATIONS

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item	8-Inji	6-Inji			4-inch
Item	nP	n-Pm	n-Mapisarema	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Absolute Value	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafer Edge	Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item	8-Inji	6-Inji			4-inch
	nP	n-Pm	n-Mapisarema	SI	SI
Surface Finish	Kaviri divi Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Edge Chips	Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm)
Indents	Hapana Inobvumirwa
Makwara (Si-Face)	Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita	Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita			Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita
Mitswe	Hapana Inobvumirwa
Kusabatanidzwa kumucheto	3mm