Silicon Carbide (SiC) Epitaxial Wafer

VET Energy silicon carbide (SiC) epitaxial wafer bụ ihe na-arụ ọrụ obosara bandgap semiconductor ihe nwere oke nguzogide okpomọkụ dị elu, ugboro dị elu na njirimara ike dị elu. Ọ bụ ezigbo mkpụrụ maka ọgbọ ọhụrụ nke ngwaọrụ eletrọnịkị ike. VET Energy na-eji teknụzụ epitaxial MOCVD dị elu na-eto eto SiC epitaxial layers na mkpụrụ SiC, na-ahụ na arụmọrụ dị mma na nkwụsi ike nke wafer.

Silicon Carbide (SiC) Epitaxial Wafer na-enye ezigbo ndakọrịta yana ọtụtụ ihe semiconductor gụnyere Si Wafer, SiC Substrate, SOI Wafer, na SiN Substrate. Site na oyi akwa epitaxial ya siri ike, ọ na-akwado usoro dị elu dị ka uto Epi Wafer na ntinye ya na ihe ndị dị ka Gallium Oxide Ga2O3 na AlN Wafer, na-eme ka ojiji dị iche iche na teknụzụ dị iche iche. Ezubere ka ọ dakọtara na sistemụ njikwa Cassette ọkọlọtọ nke ụlọ ọrụ, ọ na-eme ka arụ ọrụ dị mma na nke dabara adaba na gburugburu nrụpụta semiconductor.

Ahịrị ngwaahịa VET Energy ejedebeghị na wafers SiC epitaxial. Anyị na-enyekwa ihe dị iche iche nke semiconductor substrate, gụnyere Si Wafer, SiC Substrate, SOI Wafer, Sin Substrate, Epi Wafer, wdg Na mgbakwunye, anyị na-arụsi ọrụ ike na-emepe emepe ọhụrụ bandgap semiconductor ihe, dị ka Gallium Oxide Ga2O3 na AlN Wafer, iji gboo ike n'ọdịnihu ike electronics ụlọ ọrụ chọrọ maka elu arụmọrụ ngwaọrụ.