Silicon Carbide (SiC) Epitaxial Wafer

VET Energy Silicon carbide (SiC) wafer epitaxial waa wax qabad heersare ah oo wax qabad balaadhan leh semiconductor bandgap ballaaran leh iska caabin heerkul sare oo heersare ah, soo noqnoqosho sare iyo astaamo awood sare leh. Waa substrate ku habboon jiilka cusub ee aaladaha elektiroonigga ah. Tamarta VET waxay isticmaashaa tignoolajiyada sare ee MOCVD epitaxial si ay ugu koraan lakabyada SiC epitaxial tayo sare leh ee substrates SiC, hubinta waxqabadka wanaagsan iyo joogtaynta waferka.

Silicon Carbide (SiC) Waferka Epitaxial wuxuu bixiyaa iswaafajin heersare ah oo leh agabka kala duwan ee semiconductor oo ay ku jiraan Si Wafer, Substrate SiC, SOI Wafer, iyo SiN Substrate. Iyada oo lakabkeeda epitaxial adag, waxay taageertaa hababka horumarsan sida kobaca Epi Wafer iyo is dhexgalka qalabka sida Gallium Oxide Ga2O3 iyo AlN Wafer, hubinta isticmaalka la taaban karo ee tiknoolajiyada kala duwan. Loogu talagalay inay la jaanqaadaan hababka maaraynta cajaladaha heerka warshadaha, waxay xaqiijisaa hawl-qabad hufan oo la hagaajiyay ee deegaan-soo-saarka semiconductor.

Khadka wax soo saarka VET Energy kuma koobna waferrada SiC epitaxial. Waxaan sidoo kale bixinnaa qalabyo kala duwan oo semiconductor ah, oo ay ku jiraan Si Wafer, Substrate SiC, SOI Wafer, SiN Substrate, Epi Wafer, iwm. Intaa waxaa dheer, waxaan sidoo kale si firfircoon u horumarineynaa qalabyada semiconductor bandgap ballaaran oo cusub, sida Gallium Oxide Ga2O3 iyo AlN Wafer, si loo daboolo baahida mustaqbalka tamarta korontada ee warshadaha qalabka waxqabadka sare.