Ukufakwa komphunga weekhemikhali(I-CVD)yeyona teknoloji isetyenziswa kakhulu kwishishini le-semiconductor ekubekeni izinto ezahlukeneyo, kuquka uluhlu olubanzi lwezinto zokukhusela ubushushu, uninzi lwezinto zesinyithi kunye nezinto ze-alloy zesinyithi.
I-CVD yiteknoloji yendabuko yokulungiselela ifilimu encinci. Umgaqo wayo kukusebenzisa ii-precursors zegesi ukubola izinto ezithile kwi-precursor ngokusebenzisa ii-chemical reactions phakathi kwee-athomu kunye nee-molecules, uze emva koko wenze ifilimu encinci kwi-substrate. Iimpawu ezisisiseko ze-CVD zezi: utshintsho lweekhemikhali (ii-chemical reactions okanye ukubola kobushushu); zonke izinto ezikwifilimu zivela kwimithombo yangaphandle; ii-reactants kufuneka zithathe inxaxheba kwi-reaction ngendlela ye-gas phase.
Ukufakwa komphunga wekhemikhali ophantsi koxinzelelo (LPCVD), ukufakwa komphunga wekhemikhali ophuculweyo weplasma (PECVD) kunye nokufakwa komphunga wekhemikhali weplasma oxineneyo kakhulu (HDP-CVD) ziiteknoloji ezintathu eziqhelekileyo zeCVD, ezinomahluko omkhulu ekufakweni kwezinto, iimfuno zezixhobo, iimeko zenkqubo, njl. Oku kulandelayo yingcaciso elula kunye nothelekiso lwezi teknoloji zintathu.
1. I-LPCVD (i-CVD yoxinzelelo oluphantsi)
Umgaqo: Inkqubo ye-CVD phantsi kweemeko zoxinzelelo oluphantsi. Umgaqo wayo kukufaka igesi yokusabela kwigumbi lokusabela phantsi kwe-vacuum okanye kwindawo yoxinzelelo oluphantsi, ukubola okanye ukusabela igesi ngobushushu obuphezulu, kunye nokwenza ifilimu eqinileyo ebekwe kumphezulu we-substrate. Ekubeni uxinzelelo oluphantsi lunciphisa ukungqubana kwegesi kunye nokuxinana, ukufana kunye nomgangatho wefilimu kuyaphuculwa. I-LPCVD isetyenziswa kakhulu kwi-silicon dioxide (LTO TEOS), i-silicon nitride (Si3N4), i-polysilicon (POLY), iglasi ye-phosphosilicate (BSG), iglasi ye-borophosphosilicate (BPSG), i-polysilicon eneedoped, i-graphene, ii-carbon nanotubes kunye nezinye iifilimu.
Iimbonakalo:
▪ Ubushushu benkqubo: buhlala buphakathi kwama-500~900°C, ubushushu benkqubo buphezulu kakhulu;
▪ Uluhlu loxinzelelo lwegesi: indawo enoxinzelelo oluphantsi lwe-0.1 ~ 10 Torr;
▪ Umgangatho wefilimu: umgangatho ophezulu, ukufana okuhle, uxinano oluhle, kunye neziphene ezimbalwa;
▪ Izinga lokufaka imali: izinga lokufaka imali elicothayo;
▪ Ukufana: kufanelekile kwiindawo ezinkulu, ukufakwa kwezinto ezifanayo;
Iingenelo kunye nokungalungi:
▪ Ingabeka iifilimu ezifanayo nezixineneyo;
▪ Isebenza kakuhle kwiindawo ezinkulu, ezifanelekileyo ukuvelisa ngobuninzi;
▪ Ixabiso eliphantsi;
▪ Ubushushu obuphezulu, abufanelekanga kwizinto ezithintela ubushushu;
▪ Izinga lokufakwa kwemali licotha kwaye imveliso iphantsi kakhulu.
2. I-PECVD (i-Plasma Enhanced CVD)
Umgaqo: Sebenzisa i-plasma ukuze usebenze ii-gas phase reactions kumaqondo obushushu aphantsi, i-ionize kwaye ubolise iimolekyuli kwi-reaction gas, uze ufake iifilimu ezincinci kumphezulu we-substrate. Amandla e-plasma anokunciphisa kakhulu ubushushu obufunekayo kwi-reaction, kwaye aneendlela ezahlukeneyo zokusetyenziswa. Iifilimu ezahlukeneyo zesinyithi, iifilimu ezingaphiliyo kunye neefilimu ze-organic zinokulungiswa.
Iimbonakalo:
▪ Ubushushu benkqubo: buhlala buphakathi kwama-200~400°C, ubushushu buphantsi kakhulu;
▪ Uluhlu loxinzelelo lwegesi: ngokuqhelekileyo amakhulu e-mTorr ukuya kwiiTorr ezininzi;
▪ Umgangatho wefilimu: nangona ukufana kwefilimu kulungile, ubuninzi kunye nomgangatho wefilimu akulunganga njenge-LPCVD ngenxa yeziphene ezinokuthi zingeniswe yiplasma;
▪ Izinga lokubeka: izinga eliphezulu, ukusebenza kakuhle kwemveliso;
▪ Ukufana: ngaphantsi kancinci kune-LPCVD kwi-substrates ezinkulu;
Iingenelo kunye nokungalungi:
▪ Iifilimu ezincinci zingafakwa kumaqondo obushushu aphantsi, zilungele izinto ezithintela ubushushu;
▪ Isantya sokufakwa ngokukhawuleza, esifanelekileyo kwimveliso esebenzayo;
▪ Iipropati zefilimu eziguquguqukayo zinokulawulwa ngokulungelelanisa iiparameter zeplasma;
▪ I-Plasma inokubangela iziphene zefilimu ezifana nemingxunya okanye ukungalingani;
▪ Xa kuthelekiswa ne-LPCVD, uxinano lwefilimu kunye nomgangatho wayo zimbi kancinci.
3. I-HDP-CVD (i-High Density Plasma CVD)
Umgaqo: Itekhnoloji ekhethekileyo yePECVD. I-HDP-CVD (ekwaziwa ngokuba yi-ICP-CVD) inokuvelisa uxinano oluphezulu lweplasma kunye nomgangatho kunezixhobo zePECVD zemveli kumaqondo obushushu aphantsi okufaka. Ukongeza, i-HDP-CVD ibonelela nge-ion flux ezimeleyo kunye nolawulo lwamandla, iphucula amandla okuzalisa umngxuma okanye imingxuma yokubeka ifilimu efunekayo, njengeengubo ezichasene nokukhanya, ukufakwa kwezinto ezihlala zisebenza ngombane ophantsi, njl.
Iimbonakalo:
▪ Ubushushu benkqubo: ubushushu begumbi ukuya kwi-300℃, ubushushu benkqubo buphantsi kakhulu;
▪ Uluhlu loxinzelelo lwegesi: phakathi kwe-1 kunye ne-100 mTorr, ngaphantsi kune-PECVD;
▪ Umgangatho wefilimu: uxinano oluphezulu lweplasma, umgangatho ophezulu wefilimu, ukufana okuhle;
▪ Izinga lokufaka: izinga lokufaka liphakathi kwe-LPCVD kunye ne-PECVD, liphezulu kancinci kune-LPCVD;
▪ Ukufana: ngenxa yeplasma enoxinano oluphezulu, ukufana kwefilimu kugqibelele, kufanelekile kwiindawo ezixineneyo ze-substrate;
Iingenelo kunye nokungalungi:
▪ Iyakwazi ukubeka iifilimu ezikumgangatho ophezulu kumaqondo obushushu aphantsi, ifanelekile kakhulu kwizinto ezibuthathaka kubushushu;
▪ Ukufana okugqwesileyo kwefilimu, ubuninzi kunye nokuthamba komphezulu;
▪ Ubuninzi be-plasma buphucula ukufana kwe-deposition kunye neempawu zefilimu;
▪ Izixhobo ezinzima kunye nexabiso eliphezulu;
▪ Isantya sokufakwa kwento sicotha, kwaye amandla aphezulu eplasma anokubangela umonakalo omncinci.
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Ixesha leposi: Disemba-03-2024