Tushen gurɓatar wafer na semiconductor da tsaftacewa

Ana buƙatar wasu abubuwa na halitta da na marasa halitta don shiga cikin kera semiconductor. Bugu da ƙari, tunda ana gudanar da aikin koyaushe a cikin ɗaki mai tsabta tare da haɗin gwiwar ɗan adam, semiconductor yana aiki a matsayin mai samar da sinadarai masu amfani da sinadarai masu amfani da sinadarai masu aiki ...wafersbabu makawa suna gurɓata ta hanyar ƙazanta daban-daban.

Dangane da tushen da kuma yanayin gurɓatattun abubuwa, ana iya raba su kusan zuwa rukuni huɗu: barbashi, kwayoyin halitta, ions na ƙarfe da oxides.

 

1. Ƙwayoyin cuta:

Barbashi galibi wasu polymers ne, masu hana hasken rana da kuma ƙazanta.

Irin waɗannan gurɓatattun abubuwa galibi suna dogara ne akan ƙarfin intermolecular don shawagi a saman wafer, wanda ke shafar samuwar siffofi na geometric da sigogin lantarki na tsarin photolithography na na'urar.

Ana cire irin waɗannan gurɓatattun abubuwa ta hanyar rage yankin da suka taɓa da samanwafer ɗin waferta hanyar hanyoyin zahiri ko na sinadarai.

 

2. Abubuwan halitta:

Tushen ƙazanta na halitta suna da faɗi sosai, kamar man fatar ɗan adam, ƙwayoyin cuta, man injina, man injina, mai hana haske, mai hana haske, abubuwan tsaftacewa, da sauransu.

Irin waɗannan gurɓatattun abubuwa galibi suna samar da wani fim na halitta a saman wafer ɗin don hana ruwan tsaftacewa isa saman wafer ɗin, wanda ke haifar da tsaftace saman wafer ɗin ba tare da cikakke ba.

Ana cire irin waɗannan gurɓatattun abubuwa sau da yawa a matakin farko na aikin tsaftacewa, galibi ta amfani da hanyoyin sinadarai kamar sulfuric acid da hydrogen peroxide.

 

3. ions na ƙarfe:

Abubuwan da ba su da kyau na ƙarfe sun haɗa da ƙarfe, jan ƙarfe, aluminum, chromium, ƙarfe mai siminti, titanium, sodium, potassium, lithium, da sauransu. Manyan abubuwan da ake samu sune kayan aiki daban-daban, bututu, sinadarai masu guba, da gurɓatar ƙarfe da ake samu lokacin da aka haɗu da ƙarfe yayin sarrafawa.

Sau da yawa ana cire wannan nau'in ƙazanta ta hanyar amfani da hanyoyin sinadarai ta hanyar samar da hadaddun ion na ƙarfe.

 

4. Oxide:

Lokacin da semiconductorwafersIdan aka fallasa su ga muhalli mai dauke da iskar oxygen da ruwa, wani Layer na oxide na halitta zai fito a saman. Wannan fim ɗin oxide zai kawo cikas ga ayyuka da yawa a masana'antar semiconductor kuma yana ɗauke da wasu ƙazanta na ƙarfe. A wasu yanayi, za su haifar da lahani na lantarki.

Sau da yawa ana kammala cire wannan fim ɗin oxide ta hanyar jiƙa shi da sinadarin hydrofluoric acid mai narkewa.

 

Tsarin tsaftacewa gabaɗaya

Najasa da ke shawagi a saman semiconductorwafersza a iya raba shi zuwa nau'i uku: kwayoyin halitta, ionic da atomic.

Daga cikinsu, ƙarfin shaye-shaye tsakanin ƙazanta na kwayoyin halitta da saman wafer ɗin yana da rauni, kuma wannan nau'in ƙazanta yana da sauƙin cirewa. Galibi ƙazanta ne masu mai tare da halayen hydrophobic, wanda zai iya ba da kariya ga ƙazanta na ionic da atomic waɗanda ke gurɓata saman wafers na semiconductor, wanda ba shi da amfani ga cire waɗannan nau'ikan ƙazanta guda biyu. Saboda haka, lokacin da ake tsaftace wafers na semiconductor ta hanyar sinadarai, ya kamata a fara cire ƙazanta na kwayoyin halitta.

Saboda haka, tsarin gabaɗaya na semiconductorwafer ɗin wafertsarin tsaftacewa shine:

Kurkurewar ruwa mai narkewar ƙwayoyin halitta (De-molecularization-deionization-de-atomization-deionized water water).

Bugu da ƙari, domin a cire layin oxide na halitta a saman wafer ɗin, ana buƙatar a ƙara wani matakin jiƙa amino acid mai narkewa. Saboda haka, manufar tsaftacewa ita ce a fara cire gurɓataccen abu a saman; sannan a narkar da layin oxide; a ƙarshe a cire barbashi da gurɓataccen ƙarfe, sannan a kashe saman a lokaci guda.

 

Hanyoyin tsaftacewa na yau da kullun

Ana amfani da hanyoyin sinadarai sau da yawa don tsaftace wafers na semiconductor.

Tsaftace sinadarai yana nufin tsarin amfani da sinadarai daban-daban da sinadarai masu narkewa na halitta don amsawa ko narkar da datti da tabon mai a saman wafer ɗin don cire datti, sannan a wanke da ruwa mai yawa mai zafi da sanyi mai tsafta don samun farfajiya mai tsabta.

Ana iya raba tsaftace sinadarai zuwa ga tsabtace sinadarai masu jika da kuma tsaftace sinadarai masu busasshe, daga cikinsu har yanzu tsaftace sinadarai masu jika yana da rinjaye.

 

Tsaftace sinadarai da jika

 

1. Tsaftace sinadarai da jika:

Tsaftace sinadarai da aka jika galibi ya haɗa da nutsewa cikin ruwan magani, gogewa ta inji, tsaftacewa ta ultrasonic, tsaftacewar megasonic, feshi mai juyawa, da sauransu.

 

2. Nutsewa cikin maganin:

Nutsar da maganin ta hanyar amfani da maganin ta hanyar cire gurɓataccen abu ta hanyar nutsar da maganin ta hanyar amfani ...

Yawanci, wannan hanyar ba za ta iya cire ƙazanta gaba ɗaya a saman wafer ɗin ba, don haka ana amfani da matakan jiki kamar dumamawa, duban dan tayi, da juyawa yayin nitsewa.

 

3. Gogewa ta hanyar injina:

Sau da yawa ana amfani da gogewa ta injiniya don cire barbashi ko ragowar halitta a saman wafer ɗin. Gabaɗaya ana iya raba shi zuwa hanyoyi biyu:gogewa da gogewa da hannu ta amfani da gogewa da gogewa.

gogewa da hannuita ce hanya mafi sauƙi ta gogewa. Ana amfani da goga mai bakin ƙarfe don riƙe ƙwallon da aka jiƙa a cikin ethanol mai narkewa ko wasu sinadarai na halitta sannan a shafa saman wafer ɗin a hankali a daidai wannan hanya don cire fim ɗin kakin zuma, ƙura, manne da ya rage ko wasu ƙwayoyin cuta masu ƙarfi. Wannan hanyar tana da sauƙin haifar da ƙaiƙayi da gurɓatawa mai tsanani.

Gogewar yana amfani da juyawar injina don shafa saman wafer ɗin da goga mai laushi ko goga mai gauraya. Wannan hanyar tana rage ƙaiƙayi a kan wafer ɗin sosai. Gogewar mai ƙarfi ba za ta ƙaiƙayi wafer ɗin ba saboda rashin gogayya ta injina, kuma tana iya cire gurɓataccen da ke cikin ramin.

 

4. Tsaftace Ultrasonic:

Tsaftace Ultrasonic hanya ce ta tsaftacewa da ake amfani da ita sosai a masana'antar semiconductor. Fa'idodinta sune ingantaccen tasirin tsaftacewa, sauƙin aiki, kuma yana iya tsaftace na'urori da kwantena masu rikitarwa.

Wannan hanyar tsaftacewa tana ƙarƙashin tasirin raƙuman ultrasonic masu ƙarfi (mitar ultrasonic da aka fi amfani da ita shine 20s40kHz), kuma sassa masu yawa da yawa za a samar a cikin ruwan. Bangaren mai ƙarancin zai samar da kumfa kusan kamar na injin. Lokacin da kumfa ya ɓace, za a samar da matsin lamba mai ƙarfi a kusa da shi, wanda ke karya haɗin sinadarai a cikin ƙwayoyin don narkar da ƙazanta a saman wafer. Tsaftace ultrasonic shine mafi inganci don cire ragowar kwararar da ba ta narkewa ko mara narkewa.

 

5. Tsaftacewa mai girma:

Tsaftacewar Megasonic ba wai kawai tana da fa'idodin tsaftacewar ultrasonic ba, har ma tana shawo kan gazawarta.

Tsaftacewar Megasonic hanya ce ta tsaftace wafers ta hanyar haɗa tasirin girgiza mai ƙarfi (850kHz) tare da amsawar sinadarai na sinadarai na sinadarai. A lokacin tsaftacewa, ƙwayoyin maganin suna ƙaruwa ta hanyar raƙuman megasonic (mafi girman saurin gaggawa zai iya kaiwa 30cmVs), kuma raƙuman ruwa mai sauri suna ci gaba da shafar saman wafer ɗin, ta yadda gurɓatattun abubuwa da ƙananan ƙwayoyin da aka haɗa a saman wafer ɗin za a cire su da ƙarfi su shiga cikin maganin tsaftacewa. Ƙara masu surfactants masu acidic zuwa maganin tsaftacewa, a gefe guda, zai iya cimma manufar cire ƙwayoyin cuta da ƙwayoyin halitta a saman gogewa ta hanyar shaƙar surfactants; a gefe guda kuma, ta hanyar haɗa surfactants da muhallin acidic, zai iya cimma manufar cire gurɓataccen ƙarfe a saman takardar gogewa. Wannan hanyar za ta iya taka rawar gogewa ta injiniya da tsaftacewar sinadarai a lokaci guda.

A halin yanzu, hanyar tsaftacewa ta megasonic ta zama hanya mai inganci don tsaftace zanen gado.

 

6. Hanyar fesawa mai juyawa:

Hanyar fesawa mai juyawa hanya ce da ke amfani da hanyoyin injiniya don juya wafer ɗin a cikin babban gudu, kuma tana ci gaba da fesa ruwa (ruwa mai tsafta ko wani ruwa mai tsaftacewa) a saman wafer ɗin yayin aikin juyawa don cire ƙazanta a saman wafer ɗin.

Wannan hanyar tana amfani da gurɓataccen abu a saman wafer don narkewa a cikin ruwan da aka fesa (ko kuma ta hanyar sinadarai don narkewa), kuma tana amfani da tasirin centrifugal na juyawa mai sauri don sanya ruwan da ke ɗauke da datti ya rabu da saman wafer akan lokaci.

Hanyar fesawa mai juyawa tana da fa'idodi kamar tsaftace sinadarai, tsaftace injinan ruwa, da gogewa mai ƙarfi. A lokaci guda, ana iya haɗa wannan hanyar tare da tsarin busarwa. Bayan an shafe tsawon lokaci ana tsaftace fesawar ruwa, ana dakatar da fesawar ruwa kuma ana amfani da iskar gas. A lokaci guda, ana iya ƙara saurin juyawa don ƙara ƙarfin centrifugal don fitar da ruwa cikin sauri a saman wafer.

 

7.Busasshen tsabtace sinadarai

Tsaftacewa da busasshe yana nufin fasahar tsaftacewa wadda ba ta amfani da mafita.

Fasahohin busassun kayan da ake amfani da su a yanzu sun haɗa da: fasahar tsaftacewa ta plasma, fasahar tsaftacewa ta lokaci ta gas, fasahar tsaftacewar katako, da sauransu.

Amfanin tsaftace busasshiyar hanya ce mai sauƙi kuma babu gurɓataccen muhalli, amma farashin yana da yawa kuma iyakokin amfani ba su da yawa a yanzu.

 

1. Fasahar tsaftace jini:

Sau da yawa ana amfani da tsaftace plasma a tsarin cire photoresist. Ana shigar da ƙaramin adadin oxygen cikin tsarin amsawar plasma. A ƙarƙashin aikin filin lantarki mai ƙarfi, oxygen yana samar da plasma, wanda ke hanzarta oxidize photoresist zuwa yanayin iskar gas mai canzawa kuma ana cire shi.

Wannan fasahar tsaftacewa tana da fa'idodin aiki mai sauƙi, inganci mai yawa, tsabtataccen saman, babu ƙagewa, kuma tana da amfani wajen tabbatar da ingancin samfura a cikin tsarin cire gumi. Bugu da ƙari, ba ya amfani da acid, alkalis da sinadarai masu narkewa na halitta, kuma babu matsaloli kamar zubar da shara da gurɓatar muhalli. Saboda haka, mutane suna ƙara daraja ta. Duk da haka, ba zai iya cire carbon da sauran ƙazanta na ƙarfe ko ƙarfe ba.

 

2. Fasahar tsaftace iskar gas:

Tsaftace yanayin iskar gas yana nufin hanyar tsaftacewa wadda ke amfani da daidai lokacin iskar gas na abin da ya dace a cikin tsarin ruwa don yin mu'amala da abin da ya gurɓata a saman wafer don cimma manufar cire ƙazanta.

Misali, a cikin tsarin CMOS, tsaftace wafer yana amfani da hulɗar da ke tsakanin HF na lokacin iskar gas da tururin ruwa don cire oxides. Yawanci, tsarin HF wanda ke ɗauke da ruwa dole ne ya kasance tare da tsarin cire barbashi, yayin da amfani da fasahar tsaftace gas na lokacin iskar gas HF ba ya buƙatar tsarin cire barbashi na gaba.

Mafi mahimmancin fa'idodi idan aka kwatanta da tsarin HF na ruwa sune ƙarancin amfani da sinadarai na HF da ingantaccen tsaftacewa.

 

Barka da zuwa ga duk wani kwastomomi daga ko'ina cikin duniya don ziyarce mu don ƙarin tattaunawa!

https://www.vet-china.com/

https://www.facebook.com/people/Ningbo-Miami-Advanced-Material-Technology-Co-Ltd/100085673110923/

https://www.linkedin.com/company/100890232/admin/page-posts/published/

https://www.youtube.com/@user-oo9nl2qp6j


Lokacin Saƙo: Agusta-13-2024
Tattaunawa ta WhatsApp akan Intanet!