Itreyi yeSilicon Carbide Epitaxial Sheet yeSemiconductor Epitaxial Furnace

Itreyi yeSilicon Carbide Epitaxial Sheet Tray yeSemiconductor Epitaxial Furnace Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-VET Energy Silicon Carbide Epitaxial Sheet Tray yimveliso esebenza kakuhle kakhulu eyenzelwe ukubonelela ngokusebenza okuzinzileyo nokuthembekileyo ixesha elide. Inokumelana nobushushu okuhle kakhulu kunye nokufana kobushushu, ubunyulu obuphezulu, ukumelana nokukhukuliseka, nto leyo eyenza ukuba ibe sisisombululo esifanelekileyo sokusetyenziswa kwe-wafer.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Itreyi yephepha le-silicon carbide yinxalenye ebalulekileyo esetyenziswa kwiinkqubo ezahlukeneyo zokwenziwa kwee-semiconductor. Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza itreyi yephepha le-silicon carbide ngobunyulu obuphezulu kakhulu, ukufana okuhle kokugquma kunye nobomi benkonzo obuhle kakhulu, kunye nokumelana okuphezulu kweekhemikhali kunye neempawu zozinzo lobushushu.

I-VET Energy ngumvelisi wokwenyani weemveliso zegrafiti kunye nesilicon carbide ezenzelwe wena kunye neengubo ezahlukeneyo ezifana neSiC, iTac, i-pyrolytic carbon, iglasi efana nekhabhoni, njl.njl., inokubonelela ngezinto ezahlukeneyo ezenzelwe wena kwishishini le-semiconductor kunye ne-photovoltaic. Iqela lethu lobuchwephesha livela kumaziko ophando aphambili asekhaya, linokubonelela ngezisombululo zezinto zobungcali ngakumbi kuwe.

Sihlala siphuhlisa iinkqubo eziphambili ukuze sinikezele ngezixhobo eziphucukileyo, kwaye sisebenze ubuchwepheshe obukhethekileyo obunelungelo lobunikazi, obunokwenza ukubopha phakathi kwengubo kunye nesiseko kube nzima kwaye kungabi lula ukwahlukana.

Iimpawu zeemveliso zethu:

1. Ukumelana ne-oxidation yobushushu obuphezulu ukuya kuthi ga kwi-1700℃.
2. Ubunyulu obuphezulu kunye nokufana kobushushu
3. Ukumelana nokugqwala okugqwesileyo: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
4. Ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
5. Ubomi benkonzo obude kwaye buhlala ixesha elide

I-CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lwekristale	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Ubukhulu beenkozo	2 ~ 10μm
纯度 / Ucoceko lweekhemikhali	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Ubushushu bokunyibilikisa	2700℃
抗弯强度 / Amandla okugobeka	I-415 MPa RT 4-point
杨氏模量 / Imodulus yoLutsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwandiswa kobushushu (CTE)	4.5×10^-6K^-1