Silicon Carbide Epitaxial Sheet Tray Rau Semiconductor Epitaxial Furnace

Kev Piav Qhia Luv:

VET Energy Silicon Carbide Epitaxial Sheet Tray yog ib yam khoom ua tau zoo uas tsim los muab kev ua haujlwm zoo thiab txhim khu kev qha rau lub sijhawm ntev. Nws muaj kev tiv taus cua sov zoo heev thiab kev sib xws ntawm thermal, kev ntshiab siab, kev tiv taus kev yaig, ua rau nws yog qhov kev daws teeb meem zoo tshaj plaws rau kev siv wafer.

 


Cov Khoom Qhia Txog Khoom

Cov Cim Npe Khoom

SiC-inductors1
SiC-inductors2

Cov tais silicon carbide yog ib qho tseem ceeb uas siv rau hauv ntau yam txheej txheem tsim khoom semiconductor. Peb siv peb cov thev naus laus zis patented los ua kom cov tais silicon carbide muaj qhov huv siab heev, zoo ib yam li txheej thiab lub neej ua haujlwm zoo heev, nrog rau kev tiv taus tshuaj lom neeg thiab kev ruaj khov thermal.

VET Energy yog lub chaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide uas muaj ntau yam txheej txheem xws li SiC, Tac, pyrolytic carbon, glassy carbon, thiab lwm yam, tuaj yeem muab ntau yam khoom siv rau kev lag luam semiconductor thiab photovoltaic. Peb pab neeg tshaj lij los ntawm cov tsev kawm ntawv tshawb fawb hauv tebchaws, tuaj yeem muab cov kev daws teeb meem ntau dua rau koj.

Peb pheej tsim cov txheej txheem siab heev los muab cov ntaub ntawv zoo dua, thiab tau ua haujlwm tawm ib txoj kev siv tshuab tshwj xeeb uas tau txais patent, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis yooj yim tawg.

Cov yam ntxwv ntawm peb cov khoom:

1. Kev tiv thaiv oxidation kub siab txog li 1700 ℃.
2. Kev huv siab thiab kev sib npaug ntawm thermal
3. Kev tiv thaiv xeb zoo heev: kua qaub, alkali, ntsev thiab cov tshuaj reagents organic.

4. Kev nyuaj siab, qhov chaw me me, cov khoom me me.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua

CVD SiC薄膜基本物理性能

Cov khoom siv lub cev yooj yim ntawm CVD SiCtxheej

性质 / Khoom vaj khoom tsev

典型数值 / Tus nqi ib txwm muaj

晶体结构 / Cov Qauv Siv Crystal

FCC β theem多晶, 主要为(111) Ib

密度 / Qhov Ceev

3.21 g/cm³

硬度 / Qhov nyuaj

2500 维氏硬度 (500g load)

晶粒大小 / Cov nplej loj

2 ~ 10μm

纯度 / Kev Ntshiab Tshuaj

99.99995%

Cov duab / Peev Xwm Kub

640 J·kg-1·K-1

升华温度 Kub Sublimation

2700 ℃

抗弯强度 Lub zog flexural

415 MPa RT 4-point

杨氏模量 / Cov Modulus Hluas

430 Gpa 4pt khoov, 1300 ℃

导热系数 / ThermalKev coj ua hluav taws xob

300W·m-1·K-1

热膨胀系数 / Kev nthuav dav thermal (CTE)

4.5 × 10-6K-1

1

2

Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv

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