Amathuluzi aqhutshwa kahle, izisebenzi zenzuzo ezingochwepheshe, kanye nemikhiqizo namasevisi angcono kakhulu ngemva kokuthengisa; Siphinde saba umngane womshado omkhulu nezingane ezihlangene, wonke umuntu unamathela enzuzweni yenkampani “yokuhlanganisa, ukuzinikela, ukubekezelelana” ngekhwalithi Enhle I-Silicon Carbide RBSIC/SISIC Cantilever Paddle Esetshenziswa Embonini Ye-Solar Photovoltaic, Samukela ngobuqotho abangani ababili bamabhizinisi angaphandle nasekhaya, futhi sithemba ukusebenza nawe maduzane!
Amathuluzi aqhutshwa kahle, izisebenzi zenzuzo ezingochwepheshe, kanye nemikhiqizo namasevisi angcono kakhulu ngemva kokuthengisa; Siphinde saba ngabalingani abakhulu abahlangene nezingane, wonke umuntu unamathela enzuzweni yenkampani "ukuhlanganiswa, ukuzinikela, ukubekezelelana"I-China Refractory Ceramic kanye ne-ceramic kiln, Ukuze kuhlangatshezwane nezidingo zamakhasimende omuntu othile ngesevisi ngayinye ekahle kakhulu nezinto zekhwalithi ezinzile. Samukela ngokufudumele amakhasimende emhlabeni wonke ukuthi asivakashele, ngokubambisana kwethu okunezinhlangothi eziningi, futhi sithuthukise ngokuhlanganyela izimakethe ezintsha, sakhe ikusasa eliqhakazile!
I-SiC embozwe nge-Graphite substrate ye-Semiconductor Ama-susceptors abamba futhi ashise ama-semiconductor wafers ngesikhathi sokucubungula okushisayo. I-susceptor yenziwe ngento emunca amandla ngokungenisa, ukuqhutshwa, kanye/noma ngemisebe futhi ishise iwafa. Ukumelana nokushaqeka kwayo okushisayo, ukuqhutshwa kwe-thermal, nokuhlanzeka kubalulekile ekucubunguleni okushisayo okusheshayo (RTP). I-silicon carbide coated graphite, i-silicon carbide (SiC), ne-silicon (Si) ivamise ukusetshenziselwa izinto ezithinta ukushisa kuye ngendawo ethize eshisayo namakhemikhali. I-PureSiC® CVD SiC ne-ClearCarbon™ ultra-pure material eletha ukuqina okushisayo okuphakeme, ukumelana nokugqwala, nokuqina. Incazelo Yomkhiqizo
Ukufakwa kwe-SiC ye-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye enobumsulwa obuphakeme kanye nokumelana nomoya we-oxidizing.
I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

Izitsha zobumba zobuchwepheshe ziyinketho yemvelo yezinhlelo zokusebenza zokucubungula ukushisa kwe-semiconductor okuhlanganisa i-RTP (I-Rapid Thermal Processing), i-Epi (Epitaxial), i-diffusion, i-oxidation, kanye ne-annealing. I-CoorsTek ihlinzeka ngezinto ezithuthukisiwe eziklanyelwe ngqo ukumelana nokushaqeka okushisayo ngokuhlanzeka okuphezulu, okuqinile, nokusebenza okuphindaphindayo kwezinga lokushisa eliphezulu.
Izici:
· I-Thermal Shock Resistance enhle kakhulu
· Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba
· Excellent Chemical Resistance
· Super High Purity
· Ukutholakala kokuthi I-Complex Shape
· Isebenziseka ngaphansi kwe-Oxidizing Atmosphere
isicelo:
Iwafa idinga ukudlula ezinyathelweni ezimbalwa ngaphambi kokuba ilungele ukusetshenziswa emishinini kagesi. Inqubo eyodwa ebalulekile i-silicon epitaxy, lapho ama-wafers enziwa khona kuma-graphite susceptors. Izakhiwo kanye nekhwalithi ye-susceptors inomthelela obalulekile kukhwalithi ye-epitaxial layer ye-wafer.
Izici Ezijwayelekile Ze-Base Graphite Material:
| Ukuminyana Okubonakalayo: | 1.85 g/cm3 |
| Ukungazweli Kagesi: | 11 μΩm |
| I-Flexural Strenth: | 49 MPa (500kgf/cm2) |
| Ukuqina Kwasogwini: | 58 |
| Umlotha: | <5ppm |
| I-Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
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