Amathuluzi asebenza kahle, iqembu elinenzuzo yochwepheshe, kanye nemikhiqizo nezinsizakalo ezingcono kakhulu ngemuva kokuthengisa; Siphinde saba ngabalingani abakhulu nezingane ezihlangene, wonke umuntu unamathela kunzuzo yenkampani "ubunye, ukuzinikela, ukubekezelelana" kwekhwalithi enhle ye-Silicon Carbide RBSIC/SISIC Cantilever Paddle Esetshenziswa Embonini ye-Solar Photovoltaic, Siyakwamukela ngobuqotho ozakwethu ababili bebhizinisi langaphandle nelasekhaya, futhi sithemba ukusebenza nani esikhathini eside esizayo!
Amathuluzi asebenza kahle, iqembu elinenzuzo yochwepheshe, kanye nemikhiqizo nezinsizakalo ezingcono kakhulu ngemuva kokuthengisa; Siphinde saba ngumlingani omkhulu nezingane ezihlangene, wonke umuntu unamathela enkampanini, "ubunye, ukuzinikela, ukubekezelelana"Isitofu se-ceramic ne-ceramic esingenambala saseChinaUkuze kuhlangatshezwane nezidingo zamakhasimende athile ukuze kube nesevisi ephelele kanye nezinto ezisezingeni elizinzile. Siyawamukela ngemfudumalo amakhasimende emhlabeni wonke ukuthi asivakashele, ngokubambisana kwethu okunezinhlangothi eziningi, futhi sithuthukise izimakethe ezintsha ngokubambisana, sakhe ikusasa eliqhakazile!
Ukufakwa/ukumbozwa kwe-SiC kwe-Graphite substrate ye-Semiconductor Ama-Susceptor abamba futhi afudumale ama-wafer e-semiconductor ngesikhathi sokucubungula ukushisa. I-susceptor yenziwe ngezinto ezimunca amandla ngokungenisa, ukuhambisa, kanye/noma imisebe bese zifudumalisa i-wafer. Ukumelana kwayo nokushaqeka kokushisa, ukuqhuba ukushisa, kanye nobumsulwa kubalulekile ekucubungulweni kokushisa okusheshayo (RTP). I-graphite eboshwe nge-silicon carbide, i-silicon carbide (SiC), kanye ne-silicon (Si) zivame ukusetshenziswa kuma-susceptor kuye ngendawo ethile yokushisa kanye namakhemikhali. Izinto ze-PureSiC® CVD SiC kanye ne-ClearCarbon™ ezimsulwa kakhulu ezinikeza ukuzinza kokushisa okuphezulu, ukumelana nokugqwala, kanye nokuqina. Incazelo Yomkhiqizo
Ukufakwa kwe-SiC kwe-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye ehlanzekile kakhulu kanye nokumelana nomoya oxidating.
I-CVD SiC noma i-CVI SiC isetshenziswa ku-Graphite yezingxenye ezilula noma eziyinkimbinkimbi zomklamo. Isembozo singasetshenziswa ngobukhulu obuhlukahlukene kanye nasezingxenyeni ezinkulu kakhulu.

I-ceramics yobuchwepheshe iyisinqumo semvelo sezinhlelo zokusebenza zokucubungula ukushisa kwe-semiconductor kufaka phakathi i-RTP (Rapid Thermal Processing), i-Epi (Epitaxial), ukusabalala, i-oxidation, kanye ne-annealing. I-CoorsTek inikeza izingxenye zezinto ezithuthukisiwe eziklanyelwe ngqo ukumelana nokushaqeka kokushisa ngokusebenza okumsulwa okuphezulu, okuqinile, nokuphindaphindekayo kokushisa okuphezulu.
Izici:
· Ukumelana Okuhle Kakhulu Nokushisa Okushisayo
· Ukumelana Okuhle Kakhulu Nokwethuka Komzimba
· Ukumelana Okuhle Kakhulu Kwamakhemikhali
· Ukuhlanzeka Okuphezulu Kakhulu
· Ukutholakala ngesimo esiyinkimbinkimbi
· Ingasetshenziswa ngaphansi kwe-Oxidizing Atmosphere
isicelo:
I-wafer idinga ukudlula ezinyathelweni eziningana ngaphambi kokuba ilungele ukusetshenziswa kumadivayisi kagesi. Inqubo eyodwa ebalulekile yi-silicon epitaxy, lapho ama-wafer ethwalwa khona kuma-susceptors e-graphite. Izakhiwo kanye nekhwalithi yama-susceptors kunomthelela obalulekile ekhwalithini yengqimba ye-epitaxial ye-wafer.
Izakhiwo Ezijwayelekile Zezinto Eziyisisekelo Ze-Graphite:
| Ubuningi Obubonakalayo: | 1.85 g/cm3 |
| Ukumelana Nogesi: | 11 μΩm |
| Amandla Okuguquguquka: | 49 MPa (500kgf/cm2) |
| Ukuqina Kogu: | 58 |
| Umlotha: | <5ppm |
| Ukuqhuba Ukushisa: | 116 W/mK (100 kcal/mhr-℃) |
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