I-barrel susceptoriyingxenye esemqoka ezinqubweni zokukhula ze-semiconductor epitaxial ezifana ne-MOCVD, MBE, CVD. Isetshenziselwa kakhulu ukuthwala ama-wafers emakamelweni okuphendula izinga lokushisa eliphezulu futhi inikeze indawo yensimu eshisayo efanayo futhi ezinzile ukuze kuqinisekiswe ukubekwa okunembile kwezingqimba ze-epitaxial (ezifana ne-GaN, i-SiC, njll.). Umsebenzi wayo oyinhloko ukuzuza ukufana okuphezulu kwezinga lokushisa le-wafer ngokusebenzisa ukulawulwa kwensimu eshisayo enembile, ngaleyo ndlela kuqinisekiswe ukushuba, ukugxila kwe-doping, kanye nokufana kwesakhiwo sekristalu samafilimu amancanyana e-epitaxial.
Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza i-umgqomo susceptorngokuhlanzeka okuphezulu kakhulu, ukufana okuhle kokumboza kanye nempilo enhle yesevisi, kanye nokumelana namakhemikhali aphezulu kanye nezakhiwo zokuzinza kokushisa.
I-VET Energy isebenzisa i-graphite ehlanzekile kakhulu ene-CVD-SiC coating ukuthuthukisa ukuzinza kwamakhemikhali:
1. High ubumsulwa graphite impahla
Ukushisa okuphezulu kwe-thermal: i-thermal conductivity ye-graphite iphindwe kathathu kune-silicon, engadlulisa ngokushesha ukushisa kusuka emthonjeni wokushisa kuya ku-wafer futhi inciphise isikhathi sokushisa.
Amandla omshini: I-Isostatic pressure graphite density ≥ 1.85 g/cm ³, ekwazi ukumelana nezinga lokushisa eliphezulu ngaphezu kuka-1200 ℃ ngaphandle kokuguquka.
2. I-CVD SiC enamathela
Isendlalelo se-β - SiC sakhiwe phezu kwegraphite nge-chemical vapor deposition (CVD), enobumsulwa obungu-≥ 99.99995%, iphutha lokufana lokujiya koqweqwe olungaphansi kuka-± 5%, futhi ubulukhuni obungaphezulu bungaphansi kuka-Ra0.5um.
3. Ukuthuthukiswa kokusebenza:
Ukumelana nokugqwala: kungamelana namagesi aphezulu abolayo njenge-Cl2, i-HCl, njll, kunganweba ubude besikhathi se-GaN epitaxy izikhathi ezintathu endaweni ye-NH3.
Ukuzinza kwe-thermal: I-coefficient yokunwetshwa kwe-thermal (4.5 × 10-6/℃) ifanelana ne-graphite ukugwema ukuqhekeka kokumboza okubangelwa ukushintshashintsha kwezinga lokushisa.
Ukuqina Nokumelana Nokugqoka: Ukuqina kwe-Vickers kufinyelela ku-28 GPa, okuphindwe izikhathi ezingu-10 kune-graphite futhi kunganciphisa ingozi yokuklwebheka kwe-wafer.
| I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 晶体结构 / Isakhiwo seCrystal | I-FCC β isigaba多晶,主要為(111)取向 |
| 密度 / Ukuminyana | 3.21 g/cm³ |
| 硬度 / Ukuqina | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Uhlamvu SiZe | 2 ~ 10μm |
| 纯度 / Ukuhlanzeka Kwamakhemikhali | 99.99995% |
| 热容 / Amandla Okushisa | 640 J·kg-1·K-1 |
| 升华温度 / I-Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Amandla Aguquguqukayo | 415 MPa RT 4-iphoyinti |
| 杨氏模量 / I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| 导热系数 / ThermalI-Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Ukwandiswa Kokushisa (CTE) | 4.5×10-6K-1 |
I-Ningbo VET Energy Technology Co., Ltd iyibhizinisi lobuchwepheshe obuphezulu eligxile ekuthuthukisweni nasekukhiqizweni kwezinto eziphambili ezisezingeni eliphezulu, izinto zokwakha kanye nobuchwepheshe obuhlanganisa igraphite, i-silicon carbide, i-ceramics, ukwelashwa kwendawo efana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njll.
Ithimba lethu lezobuchwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, futhi selithuthukise ubuchwepheshe obuningi obunamalungelo obunikazi ukuze kuqinisekiswe ukusebenza komkhiqizo nekhwalithi, linganikeza amakhasimende izixazululo zezinto ezibonakalayo.
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