Isivikelo semigqomoiyisici esiyinhloko ezinqubweni zokukhula kwe-epitaxial ye-semiconductor njenge-MOCVD, i-MBE, i-CVD. Isetshenziswa kakhulu ukuthwala ama-wafer emakamelweni okusabela okushisa okuphezulu futhi inikeze indawo yensimu yokushisa efanayo nezinzile ukuqinisekisa ukufakwa okunembile kwezingqimba ze-epitaxial (njenge-GaN, i-SiC, njll.). Umsebenzi wayo oyinhloko ukufeza ukufana okuphezulu kokushisa kobuso be-wafer ngokulawula okunembile kwensimu yokushisa, ngaleyo ndlela kuqinisekiswe ukujiya, ukuhlushwa kwe-doping, kanye nokufana kwesakhiwo sekristalu samafilimu amancane e-epitaxial.
Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenzaumhluzi wemigqomongokuhlanzeka okuphezulu kakhulu, ukufana okuhle kokumboza kanye nokuphila kahle kwenkonzo, kanye nokumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.
I-VET Energy isebenzisa i-graphite emsulwa kakhulu ene-CVD-SiC coating ukuze ithuthukise ukuzinza kwamakhemikhali:
1. Izinto ze-graphite ezihlanzekile kakhulu
Ukushisa okuphezulu: Ukushisa kwe-graphite kuphindwe kathathu kune-silicon, okungadlulisa ukushisa ngokushesha kusuka emthonjeni wokushisa kuya ku-wafer futhi kunciphise isikhathi sokushisa.
Amandla omshini: Ubuningi be-graphite yengcindezi ye-isostatic ≥ 1.85 g/cm³, ekwazi ukumelana namazinga okushisa aphezulu ngaphezu kuka-1200 ℃ ngaphandle kokuguquka.
2. Ukwembozwa kwe-CVD SiC
Isendlalelo se-β - SiC sakhiwa phezu kobuso be-graphite nge-chemical vapor deposition (CVD), ngobumsulwa obungu-≥ 99.99995%, iphutha elifanayo lokujiya kokumboza lingaphansi kuka-±5%, kanti ubulukhuni bomphezulu bungaphansi kuka-Ra0.5um.
3. Ukuthuthukiswa kokusebenza:
Ukumelana nokugqwala: ingamelana namagesi agqwala kakhulu njenge-Cl2, i-HCl, njll., ingandisa isikhathi sokuphila se-epitaxy ye-GaN ngokuphindwe kathathu endaweni ye-NH3.
Ukuqina kokushisa: I-coefficient yokwanda kokushisa (4.5 × 10-6/℃) ifana ne-graphite ukuze kugwenywe ukuqhekeka kokumboza okubangelwa ukushintshashintsha kokushisa.
Ukuqina Nokumelana Nokuguguleka: Ukuqina kwe-Vickers kufinyelela ku-28 GPa, okuphindwe kayishumi kune-graphite futhi kunganciphisa ingozi yokuklwebheka kwe-wafer.
| I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 晶体结构 / Isakhiwo sekristalu | Isigaba se-β se-FCC多晶,主要為(111)取向 |
| 密度 / Ubuningi | 3.21 g/cm³ |
| 硬度 / Ubulukhuni | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Usayizi Wokusanhlamvu | 2 ~ 10μm |
| 纯度 / Ukuhlanzeka Kwamakhemikhali | 99.99995% |
| 热容 / Amandla Okushisa | 640 J·kg-1·K-1 |
| 升华温度 / Izinga Lokushisa Elingaphansi | 2700℃ |
| 抗弯强度 / Amandla Okugobeka | I-415 MPa RT amaphuzu angu-4 |
| 杨氏模量 / I-Modulus yentsha | I-430 Gpa 4pt bend, 1300℃ |
| 导热系数 / I-ThermalUkuqhuba | 300W·m-1·K-1 |
| 热膨胀系数 / Ukwanda Kokushisa (i-CTE) | 4.5×10-6K-1 |
I-Ningbo VET Energy Technology Co., Ltd iyibhizinisi lobuchwepheshe obuphezulu eligxile ekuthuthukisweni nasekukhiqizweni kwezinto ezisezingeni eliphezulu, izinto zokwakha kanye nobuchwepheshe okuhlanganisa i-graphite, i-silicon carbide, izinto zobumba, ukwelashwa kwendawo efana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njll., le mikhiqizo isetshenziswa kabanzi ku-photovoltaic, semiconductor, amandla amasha, i-metallurgy, njll.
Ithimba lethu lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, futhi lithuthukise ubuchwepheshe obuningi obunelungelo lobunikazi ukuqinisekisa ukusebenza komkhiqizo kanye nekhwalithi, linganikeza amakhasimende izixazululo zezinto zobuchwepheshe.
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