I-Vet-ChinaI-Silicon Carbide CeramicI-coating iyisivikelo esisebenza kahle kakhulu esenziwe ngokuqina ngokwedlulele futhi esingagugii-silicon carbide (SiC)impahla, enikeza ukumelana nokugqwala kwamakhemikhali okuhle kakhulu kanye nokuzinza kwezinga lokushisa eliphezulu. Lezi zici zibalulekile ekukhiqizeni kwe-semiconductor, ngakho-keI-Silicon Carbide Ceramic Coatingisetshenziswa kabanzi ezingxenyeni ezibalulekile zemishini yokukhiqiza ye-semiconductor.
Indima ethile ye-Vet-ChinaI-Silicon Carbide CeramicI-Coating in production semiconductor imi kanje:
Thuthukisa ukuqina kwemishini:I-Silicon Carbide Ceramic Coating I-Silicon Carbide Ceramic Coating inikeza isivikelo esihle kakhulu sangaphandle semishini yokukhiqiza i-semiconductor ngobulukhuni bayo obuphakeme kakhulu kanye nokumelana nokugqoka. Ikakhulukazi ezindaweni ezishisa kakhulu nezishisa kakhulu, ezifana ne-chemical vapor deposition (CVD) kanye ne-plasma etching, okokunamathela kungavimbela ngokuphumelelayo ingaphezulu lezinto zokusebenza ukuthi zingalinyazwa ukuguguleka kwamakhemikhali noma ukuguga komzimba, ngaleyo ndlela kunwebe ngokuphawulekayo impilo yesevisi yemishini futhi kunciphise isikhathi sokuphumula esibangelwa ukushintshwa nokulungiswa njalo.
Thuthukisa ubumsulwa benqubo:Enqubweni yokukhiqiza i-semiconductor, ukungcoliswa okuncane kungase kubangele ukonakala komkhiqizo. I-inertness yamakhemikhali ye-Silicon Carbide Ceramic Coating ivumela ukuthi ihlale izinzile ngaphansi kwezimo ezimbi kakhulu, ivimbela impahla ekukhipheni izinhlayiya noma ukungcola, ngaleyo ndlela iqinisekise ukuhlanzeka kwemvelo kwenqubo. Lokhu kubaluleke kakhulu ezinyathelweni zokukhiqiza ezidinga ukunemba okuphezulu nokuhlanzeka okuphezulu, njenge-PECVD nokufakwa kwe-ion.
Lungiselela ukuphathwa kwe-thermal:Ekucubunguleni izinga lokushisa eliphezulu kwe-semiconductor, njengokucutshungulwa kwe-thermal okusheshayo (RTP) nezinqubo ze-oxidation, ukuqhutshwa kokushisa okuphezulu kwe-Silicon Carbide Ceramic Coating kwenza ukusatshalaliswa kwezinga lokushisa okufanayo ngaphakathi kwemishini. Lokhu kusiza ekunciphiseni ukucindezeleka okushisayo kanye nokuguqulwa kwezinto okubangelwa ukushintshashintsha kwezinga lokushisa, ngaleyo ndlela kuthuthukiswe ukunemba kokukhiqizwa komkhiqizo nokuvumelana.
Sekela izindawo zenqubo eyinkimbinkimbi:Ezinqubweni ezidinga ukulawulwa komkhathi okuyinkimbinkimbi, njengezinqubo ze-ICP etching kanye ne-PSS, ukuzinza nokumelana ne-oxidation ye-Silicon Carbide Ceramic Coating kuqinisekisa ukuthi okokusebenza kugcina ukusebenza okuzinzile ekusebenzeni kwesikhathi eside, kunciphisa ubungozi bokuwohloka kwezinto noma ukulimala kwemishini ngenxa yezinguquko zemvelo.
| I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 晶体结构 / Isakhiwo seCrystal | I-FCC β isigaba多晶,主要為(111)取向 |
| 密度 / Ukuminyana | 3.21 g/cm³ |
| 硬度 / Ukuqina | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Uhlamvu SiZe | 2 ~ 10μm |
| 纯度 / Ukuhlanzeka Kwamakhemikhali | 99.99995% |
| 热容 / Amandla Okushisa | 640 J·kg-1·K-1 |
| 升华温度 / I-Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Amandla Aguquguqukayo | 415 MPa RT 4-iphoyinti |
| 杨氏模量 / I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| 导热系数 / ThermalI-Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Ukwandiswa Kokushisa (CTE) | 4.5×10-6K-1 |
Siyakwamukela ngokufudumele ukuthi uvakashele ifekthri yethu, ake sibe nengxoxo eyengeziwe!
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