Udokotela Wezilwane-eShayinaI-Silicon Carbide CeramicI-Coating iyi-coating evikelayo esebenza kahle kakhulu eyenziwe ngokhuni oluqinile kakhulu futhi olungagugii-silicon carbide (i-SiC)izinto zokwakha, ezihlinzeka ngokumelana okuhle kakhulu nokugqwala kwamakhemikhali kanye nokuqina kokushisa okuphezulu. Lezi zici zibalulekile ekukhiqizweni kwe-semiconductor, ngakho-keIsimbozo se-Silicon Carbide Ceramicisetshenziswa kabanzi ezingxenyeni ezibalulekile zemishini yokukhiqiza ye-semiconductor.
Indima ethile ye-Vet-ChinaI-Silicon Carbide CeramicUkugqoka ekukhiqizweni kwe-semiconductor kungokulandelayo:
Thuthukisa ukuqina kwemishini:I-Silicon Carbide Ceramic Coating I-Silicon Carbide Ceramic Coating inikeza ukuvikelwa okuphezulu kakhulu kobuso bemishini yokukhiqiza ye-semiconductor ngokuqina kwayo okuphezulu kakhulu kanye nokumelana nokuguguleka. Ikakhulukazi ezindaweni zenqubo ezishisa kakhulu nezigqwala kakhulu, njenge-chemical vapor deposition (CVD) kanye ne-plasma etching, i-coating ingavimbela ngempumelelo ubuso bemishini ukuthi bungalinyazwa ukuguguleka kwamakhemikhali noma ukuguguleka ngokomzimba, ngaleyo ndlela yandise kakhulu impilo yesevisi yemishini futhi inciphise isikhathi sokungasebenzi esibangelwa ukushintshwa nokulungiswa njalo.
Thuthukisa ukuhlanzeka kwenqubo:Enqubweni yokukhiqiza ye-semiconductor, ukungcola okuncane kungabangela ukukhubazeka komkhiqizo. Ukungasebenzi kwamakhemikhali kwe-Silicon Carbide Ceramic Coating kuyivumela ukuthi ihlale izinzile ngaphansi kwezimo ezimbi kakhulu, ivimbele izinto ukuthi zingakhiphi izinhlayiya noma ukungcola, ngaleyo ndlela iqinisekise ubumsulwa bemvelo benqubo. Lokhu kubaluleke kakhulu ezinyathelweni zokukhiqiza ezidinga ukunemba okuphezulu kanye nokuhlanzeka okuphezulu, njenge-PECVD kanye nokufakelwa kwe-ion.
Lungiselela ukuphathwa kokushisa:Ekucutshungulweni kwe-semiconductor yokushisa okuphezulu, njengokucubungula okusheshayo kokushisa (RTP) kanye nezinqubo ze-oxidation, ukuhanjiswa okuphezulu kokushisa kwe-Silicon Carbide Ceramic Coating kwenza ukusatshalaliswa kokushisa okufanayo ngaphakathi kwemishini. Lokhu kusiza ukunciphisa ukucindezeleka kokushisa kanye nokuguqulwa kwezinto okubangelwa ukushintshashintsha kokushisa, ngaleyo ndlela kuthuthukiswe ukunemba nokuvumelana kokukhiqiza umkhiqizo.
Sekela izindawo zenqubo eziyinkimbinkimbi:Ezinqubweni ezidinga ukulawulwa komoya okuyinkimbinkimbi, njengezinqubo zokugoba ze-ICP kanye nokugoba kwe-PSS, ukumelana nokuzinza kanye nokushiswa kwe-Silicon Carbide Ceramic Coating kuqinisekisa ukuthi imishini igcina ukusebenza okuzinzile ekusebenzeni kwesikhathi eside, okunciphisa ingozi yokuwohloka kwezinto noma ukulimala kwemishini ngenxa yezinguquko zemvelo.
| I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 晶体结构 / Isakhiwo sekristalu | Isigaba se-β se-FCC多晶,主要為(111)取向 |
| 密度 / Ubuningi | 3.21 g/cm³ |
| 硬度 / Ubulukhuni | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Usayizi Wokusanhlamvu | 2 ~ 10μm |
| 纯度 / Ukuhlanzeka Kwamakhemikhali | 99.99995% |
| 热容 / Amandla Okushisa | 640 J·kg-1·K-1 |
| 升华温度 / Izinga Lokushisa Elingaphansi | 2700℃ |
| 抗弯强度 / Amandla Okugobeka | I-415 MPa RT amaphuzu angu-4 |
| 杨氏模量 / I-Modulus yentsha | I-430 Gpa 4pt bend, 1300℃ |
| 导热系数 / I-ThermalUkuqhuba | 300W·m-1·K-1 |
| 热膨胀系数 / Ukwanda Kokushisa (i-CTE) | 4.5×10-6K-1 |
Siyakwamukela ngemfudumalo ukuthi uvakashele ifektri yethu, ake sixoxe kabanzi!
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