Ubuninzi be-CVD Solid SiC ecocekileyo kakhulu

Umfanekiso oBukhulu we-CVD Solid SiC Bulk oLungileyo oLuphezulu

Inkcazo emfutshane:

Ukukhula ngokukhawuleza kweekristale zeSiC ezingatshatanga kusetyenziswa imithombo emininzi yeCVD-SiC (iChemical Vapor Deposition – SiC) yindlela eqhelekileyo yokulungiselela izinto zekristale zeSiC ezikumgangatho ophezulu. Ezi kristale zingatshatanga zingasetyenziswa kwiindlela ezahlukeneyo zokusebenza, kubandakanya izixhobo ze-elektroniki ezinamandla aphezulu, izixhobo ze-optoelectronic, ii-sensors, kunye nezixhobo ze-semiconductor.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-VET Energy isebenzisa ubunyulu obuphezulu kakhului-silicon carbide (i-SiC)yenziwe yi-chemical vapor deposition(I-CVD)njengemithombo yokukhulaIikristale zeSiCngothutho lomphunga oluphathekayo (PVT). Kwi-PVT, izinto ezisisiseko zifakwa kwi-i-cruciblekwaye yafakwa kwi-crystal yembewu.

Umthombo ococekileyo kakhulu uyafuneka ukuze kuveliswe umgangatho ophezuluIikristale zeSiC.

I-VET Energy igxile ekuboneleleni nge-large-particle SiC kwi-PVT kuba inoxinano oluphezulu kune-small-particle material eyenziwe kukutsha okuzenzekelayo kweegesi eziqulethe i-Si kunye ne-C. Ngokungafaniyo ne-solid-phase sintering okanye i-reaction ye-Si kunye ne-C, ayifuni i-sintering furnace ekhethekileyo okanye inyathelo lokutsha elithatha ixesha elide kwi-growth furnace. Le mpahla ye-large-particle ine-evaporation rate ephantse ihlale ihleli, nto leyo ephucula ukufana kwe-run-to-run.

Intshayelelo:
1. Lungisa umthombo weebhloko zeCVD-SiC: Okokuqala, kufuneka ulungiselele umthombo weebhloko zeCVD-SiC osemgangathweni ophezulu, ohlala ucocekile kwaye unoxinano olukhulu. Oku kungalungiswa ngendlela ye-chemical vapor deposition (CVD) phantsi kweemeko ezifanelekileyo zokusabela.

2. Ukulungiswa kwe-substrate: Khetha i-substrate efanelekileyo njenge-substrate yokukhula kwe-SiC single crystal. Izinto ze-substrate ezisetyenziswa rhoqo ziquka i-silicon carbide, i-silicon nitride, njl.njl., ezihambelana kakuhle ne-SiC single crystal ekhulayo.

3. Ukufudumeza kunye nokunyibilikisa: Beka umthombo webhloko yeCVD-SiC kunye ne-substrate kwisithando sobushushu obuphezulu kwaye unikezele ngeemeko ezifanelekileyo zokunyibilikisa. Ukunyibilikisa kuthetha ukuba kubushushu obuphezulu, umthombo webhloko utshintsha ngokuthe ngqo ukusuka kwimeko eqinileyo ukuya kwimeko yomphunga, uze uphinde ujike kumphezulu webhloko ukuze wenze ikristale enye.

4. Ulawulo lobushushu: Ngexesha lenkqubo yokwenziwa kwe-sublimation, i-gradient yobushushu kunye nokusasazwa kobushushu kufuneka kulawulwe ngokuchanekileyo ukukhuthaza ukwenziwa kwe-sublimation yomthombo webhloko kunye nokukhula kweekristale ezizodwa. Ulawulo lobushushu olufanelekileyo lunokufezekisa umgangatho ofanelekileyo wekristale kunye nesantya sokukhula.

5. Ulawulo lwemozulu: Ngexesha lenkqubo yokwenziwa kwe-sublimation, umoya wempendulo nawo kufuneka ulawulwe. Igesi ecocekileyo kakhulu (efana ne-argon) idla ngokusetyenziswa njengegesi yokuthwala ukugcina uxinzelelo olufanelekileyo kunye nobunyulu kunye nokuthintela ukungcoliswa bubumdaka.

6. Ukukhula kwekristale enye: Umthombo webhloko yeCVD-SiC udlula kutshintsho lwesigaba somphunga ngexesha lenkqubo ye-sublimation kwaye ubuyela kwakhona kumphezulu we-substrate ukuze wenze isakhiwo sekristale enye. Ukukhula ngokukhawuleza kweekristale enye zeSiC kunokufezekiswa ngeemeko ezifanelekileyo ze-sublimation kunye nolawulo lwe-gradient yobushushu.