I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptorsisixhobo sokuxhasa kunye nokufudumeza esiyilwe ngokukodwa esisetyenziselwa ukubamba kunye nokufudumeza ii-substrates ze-semiconductor ngexesha leenkqubo zokuvelisa ezifana neenkqubo ze-Deposition okanye ze-Epitaxy.

Ulwakhiwo lwayo ludla ngokuba nesilinda okanye imilo enjengemibhobho kancinci, umphezulu unemipokotho emininzi okanye amaqonga okubeka ii-wafers, unokuba nguyilo oluqinileyo okanye olungenanto, kuxhomekeke kwindlela yokufudumeza.

Imisebenzi ephambili ye-epitaxial barrel susceptor:

1. Isithwali seWafer kunye noLawulo lobushushu
Umphezulu we-susceptor wenziwe ngeepokotho ezininzi ze-wafer (ezifana nolungiselelo lwe-hexagonal okanye lwe-octagonal), ezinokuxhasa ii-wafers ezi-6-15 ngaxeshanye. Ukuqhuba okuphezulu kobushushu be-graphite ecocekileyo kakhulu (120-150W/mK) kuqinisekisa ukudluliselwa kobushushu ngokukhawuleza, kudityaniswe nomsebenzi wokujikeleza (5-20 RPM), okubangela ukuphambuka kobushushu bomphezulu we-wafer obuyi-<± 1 ℃ kunye nokufana kobukhulu beleyara ye-epitaxial obuyi-<1%.

2. Ukuphucula indlela yokuhamba kwegesi esabelayo
Ulwakhiwo oluncinci lomphezulu we-susceptor lunokwaphula isiphumo somda womaleko, okuvumela ukusasazwa okufanayo kweegesi zokusabela (ezifana ne-SiH4, i-NH3) kunye nokuphucula ukuhambelana kwesantya sokufakwa.

3. Ukhuseleko lokulwa nongcoliseko kunye nokulwa nokugqwala
Ii-substrates ze-graphite zinokonakala kwaye zikhuphe ukungcola kwesinyithi (okufana ne-Fe,Ni) kumaqondo obushushu aphezulu, ngelixa i-CVD SiC coating enobukhulu obuyi-100μm inokwenza umqobo oxineneyo wokuthintela ukuguquguquka kwe-graphite, okubangela izinga lokukhubazeka kwe-wafer elingaphantsi kwe-0.1 defects/cm².

Izicelo:
-Isetyenziswa kakhulu ekukhuleni kwe-silicon epitaxial
-Ikwasebenza nakwi-epitaxy yezinye izixhobo ze-semiconductor ezifana neGaAs, InP, njl.

I-VET Energy isebenzisa i-graphite ecocekileyo kakhulu ene-CVD-SiC coating ukuphucula uzinzo lweekhemikhali:

1. Izinto zegrafiti ezicocekileyo kakhulu
Ubushushu obuphezulu: Ubushushu obuphezulu begrafiti buphindwe kathathu kunobo besilicon, obunokudlulisa ubushushu ngokukhawuleza ukusuka kumthombo wobushushu ukuya kwi-wafer kwaye bunciphise ixesha lokufudumeza.
Amandla oomatshini: Uxinano lwegrafiti yoxinzelelo oluyi-isostatic ≥ 1.85 g/cm³, ekwaziyo ukumelana namaqondo obushushu aphezulu angaphezu kwe-1200 ℃ ngaphandle kokuguquka.

2. Ukwaleka kwe-CVD SiC
Umaleko we-β-SiC wenziwa phezu komphezulu wegrafiti nge-chemical vapor deposition (CVD), kunye nobumsulwa be-≥ 99.99995%, impazamo efanayo yobukhulu be-coating ingaphantsi kwe-±5%, kwaye uburhabaxa bomphezulu bungaphantsi kwe-Ra0.5um.

3. Ukuphuculwa kokusebenza:
Ukumelana nokugqwala: inokumelana neegesi ezigqwala kakhulu ezifana neCl2, HCl, njl.njl., inokwandisa ubomi be-epitaxy yeGaN ngokuphindwe kathathu kwindawo ye-NH3.
Uzinzo lobushushu: I-coefficient yokwandiswa kobushushu (4.5 × 10-6/℃) ihambelana ne-graphite ukuze kuthintelwe ukuqhekeka kombala okubangelwa kukuguquguquka kobushushu.
Ukuqina kunye nokuxhathisa ukuguguleka: Ukuqina kweVickers kufikelela kwi-28 GPa, okuphindwe kalishumi kune-graphite kwaye kunokunciphisa umngcipheko wokukrweleka kwe-wafer.