I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptorsisixhobo senkxaso esilungiselelwe ngokukodwa kunye nesixhobo sokufudumeza esisetyenziselwa ukubamba kunye nokufudumala kwe-semiconductor substrates ngexesha leenkqubo zokuvelisa ezifana ne-Deposition okanye iinkqubo ze-Epitaxy.

Ubume bayo bubandakanya ngokuqhelekileyo i-cylindrical okanye i-barrel-shaped-shaped, i-surface features iipokotho ezininzi okanye iiplatifomu zokubeka ii-wafers, zinokuba lukhuni okanye ziyilo, kuxhomekeke kwindlela yokufudumala.

Imisebenzi ephambili ye-epitaxial barrel susceptor:

1. Isithwali seWafer kunye noLawulo lobushushu
Umphezulu we-susceptor uyilwe ngeepokotho ezininzi ze-wafer (ezifana ne-hexagonal okanye i-octagonal arrangement), enokuxhasa ii-wafers ezi-6-15 ngaxeshanye. I-thermal conductivity ephezulu ye-graphite ecocekileyo (i-120-150W / mK) iqinisekisa ukuhanjiswa kobushushu ngokukhawuleza, kudibaniswa nomsebenzi wokujikeleza (5-20 RPM), okubangelwa ukuphambuka kobushushu bomphezulu we-wafer ye-<± 1 ℃ kunye ne-epitaxial layer thicknessity ye-<1%.

2. Ukuphuculwa kwendlela yokuhamba kwerhasi esabelayo
I-microstructure ye-susceptor surface ingaphula i-border layer effect, ivumela ukuhanjiswa okufanayo kweegesi zokuphendula (ezifana ne-SiH4, i-NH3) kunye nokuphucula ukuhambelana kwezinga lokubeka.

3. Ukuchasana nongcoliseko kunye nokhuseleko lokuchasa umhlwa
I-Graphite substrates ithanda ukubola kwaye ikhulule ubumdaka bentsimbi (efana ne-Fe,Ni) kumaqondo obushushu aphezulu, ngelixa i-100μm eshinyeneyo ye-CVD SiC yokugquma inokwenza umqobo oshinyeneyo wokucinezela ukuvuthuluka kwegraphite, okukhokelela kwireyithi yesiphene se-wafer <0.1 iziphene/cm².

Usetyenziso:
-Ngokuphambili isetyenziselwa ukukhula kwe-silicon epitaxial
-Kwakhona kusebenza kwi-epitaxy yezinye izinto ze-semiconductor ezifana ne-GaAs, i-InP, njl.

Amandla e-VET asebenzisa igraphite ecocekileyo ene-CVD-SiC coating ukuqinisa uzinzo lwekhemikhali:

1. Izinto ezicocekileyo zegraphite
I-high conductivity ye-thermal: i-thermal conductivity ye-graphite iphindwe kathathu ye-silicon, enokudlulisa ngokukhawuleza ukushisa ukusuka kumthombo wokufudumala ukuya kwi-wafer kunye nokunciphisa ixesha lokufudumala.
Amandla omatshini: Uxinzelelo lwe-Isostatic uxinzelelo lwegraphite ≥ 1.85 g/cm ³, ekwaziyo ukumelana namaqondo obushushu angaphezu kwe-1200 ℃ ngaphandle koguquko.

2. Ukwaleka kwe-CVD SiC
I-β - i-SiC layer yenziwe phezu kwegraphite nge-chemical vapor deposition (CVD), kunye nococeko lwe-≥ 99.99995%, impazamo yokufana kobunzima bokugquma bungaphantsi kwe-± 5%, kunye nobukhulu bomhlaba bungaphantsi kwe-Ra0.5um.

3. Uphuculo lokusebenza:
Ukumelana ne-Corrosion: inokumelana ne-corrosion gases ephezulu njenge-Cl2, i-HCl, njl njl, inokwandisa ubomi be-GaN epitaxy ngamaxesha amathathu kwindawo ye-NH3.
Ukuzinza kwe-Thermal: I-coefficient yokwandiswa kwe-thermal (4.5 × 10-6 / ℃) ihambelana negraphite ukuphepha i-coefficient yokuqhekeka okubangelwa ukuguquguquka kweqondo lokushisa.
Ubunzima kunye nokuNxitywa kwe-Resistance: Ubunzima beVickers bufikelela kwi-28 GPa, ephindwe ka-10 ngaphezu kwegraphite kwaye inokunciphisa umngcipheko we-wafer scratches.