1. Yintoni isikhephe sePECVD?
1.1 Inkcazo nemisebenzi engundoqo
I-PECVD isikhephe (i-Plasma Enhanced Chemical Vapor Deposition) sisixhobo esingundoqo esisetyenziselwa ukuthwala ama-wafers okanye i-substrates kwinkqubo ye-PECVD. Kufuneka isebenze ngokuzinzileyo kwiqondo lokushisa eliphezulu (300-600 ° C), i-plasma-activated kunye negesi eyingozi (njenge-SiH₄, NH₃) indawo. Imisebenzi yayo ephambili ibandakanya:
● Ukuma okuchanekileyo: qinisekisa isithuba se-wafer efanayo kwaye ugweme ukuphazamiseka kokugquma.
● Ulawulo lwe-Thermal field: ukwandisa ukuhanjiswa kweqondo lokushisa kunye nokuphucula ukufana kwefilimu.
● Umqobo wokuchasana nongcoliseko: Ukwahlula iplasma kumgodi wesixhobo ukunciphisa umngcipheko wokungcoliseka kwesinyithi.
1.2 Izakhiwo eziqhelekileyo kunye nemathiriyeli
Ukukhethwa kwezinto:
● Isikhephe segraphite (ukhetho oluqhelekileyo): i-conductivity ephezulu ye-thermal, ukumelana nokushisa okuphezulu, ixabiso eliphantsi, kodwa lifuna ukugquma ukukhusela i-corrosion yegesi.
●Isikhephe seQuartz: Ubunyulu obuphezulu kakhulu, ukumelana neekhemikhali, kodwa bubunkunkqele kwaye bubiza kakhulu.
●I-Ceramics (efana ne-Al₂O₃): i-resistant-resistant, ifanelekile kwimveliso ye-high-frequency, kodwa i-thermal conductivity.
Iimpawu eziphambili zoyilo:
● Isithuba sesithuba: Tshatisa ubukhulu bewafer (efana ne-0.3-1mm yokunyamezelana).
●Uyilo lomngxuma wokuhamba komoya: kwandisa ukuhanjiswa kwegesi yokusabela kunye nokunciphisa umphumo.
●Ukugquma ubuso: I-SiC eqhelekileyo, i-TaC okanye i-DLC (i-diamond-like carbon) i-coating yokwandisa ubomi benkonzo.
2. Kutheni le nto kufuneka sinikele ingqalelo ekusebenzeni kwezikhephe zePECVD?
2.1 Izinto ezine eziphambili ezichaphazela ngqo isivuno senkqubo
✔ Ulawulo Longcoliseko:
Ukungcola kumzimba wesikhephe (okufana ne-Fe kunye ne-Na) kuguquguquka kumaqondo okushisa aphezulu, kubangela i-pinholes okanye ukuvuza kwifilimu.
I-Coating peeling iya kwazisa iinqununu kwaye ibangele iziphene zokugubungela (umzekelo, iinqununu> 0.3μm zingabangela ukuba ukusebenza kwebhetri kuhla nge-0.5%).
✔ Ukuhambelana kwentsimi ye-Thermal:
Ukushisa okungalinganiyo kwe-PECVD yesikhephe segraphite kuya kubangela ukungafani kobunzima befilimu (umzekelo, phantsi kwemfuneko efanayo ye-± 5%, umahluko weqondo lokushisa kufuneka ube ngaphantsi kwe-10 ° C).
✔ Ukuhambelana kwePlasma:
Imathiriyeli engafanelekanga inokubangela ukukhupha okungaqhelekanga kwaye yonakalise iwafa okanye i-electrode yesixhobo.
✔ Ubomi benkonzo kunye neendleko:
Izikhitshane ezikumgangatho ophantsi kufuneka zitshintshwe rhoqo (umz. kanye ngenyanga), kwaye iindleko zonyaka zokuzigcina zixabisa kakhulu.
3. Indlela yokukhetha, ukusebenzisa nokugcina isikhephe sePECVD?
3.1 Indlela yokukhetha enamanyathelo amathathu
Inyathelo 1: Cacisa iiparamitha zenkqubo
● Uluhlu lweqondo lokushisa: I-graphite + i-SiC yokugqoka ingakhethwa ngaphantsi kwe-450 ° C, kwaye i-quartz okanye i-ceramic iyadingeka ngaphezu kwe-600 ° C.
●Uhlobo lwerhasi: Xa iqulethe iigesi ezonakalisayo ezifana ne-Cl2 kunye no-F-, kufuneka kusetyenziswe ukutyabeka okunoxinano oluphezulu.
●Ubungakanani be-Wafer: I-8-intshi / i-12-intshi yesakhiwo sokwakheka kwesikhephe sahluke kakhulu kwaye sifuna uyilo olujoliswe kuyo.
Inyathelo lesi-2: Vavanya imilinganiselo yokusebenza
Iimetriki eziphambili :
●Uburhabaxa bomphezulu (Ra) : ≤0.8μm (umphezulu woqhagamshelwano kufuneka ube ≤0.4μm)
●Amandla ebhondi yokugquma: ≥15MPa (ASTM C633 standard)
●Ukuguqulwa kobushushu obuphezulu (600℃) : ≤0.1mm/m (uvavanyo lweeyure ezingama-24)
Inyathelo lesi-3: Qinisekisa ukuhambelana
● Izixhobo ezihambelanayo: Qinisekisa ubungakanani be-interface kunye neemodeli eziqhelekileyo ezifana ne-AMAT Centura, i-centrotherm PECVD, njl.
● Uvavanyo lwemveliso yovavanyo: Kucetyiswa ukuba kuqhutywe uvavanyo lwebhetshi encinci ye-50-100 iziqwenga zokuqinisekisa ukufana kwengubo (ukuphambuka okuqhelekileyo kwefilimu <3%).
3.2 IiNdlela eziGqwesileyo zokuSebenza kunye noLondolozo
IiNgcaciso zoMsebenzi:
✔Inkqubo yokucoca kwangaphambili:
● Ngaphambi kokuba isetyenziswe okokuqala, iXinzhou kufuneka ihlaselwe ngeAr plasma kangangemizuzu engama-30 ukuze isuse ubumdaka obungaphandle.
●Emva kwebhetshi nganye yenkqubo, i-SC1 (NH₄OH:H₂O₂:H₂O=1:1:5) isetyenziselwa ukucoca ukususa iintsalela zezinto eziphilayo.
✔ Layisha taboos:
●Ukulayishwa ngokugqithisileyo akuvumelekanga (umzekelo, umthamo omkhulu wenzelwe ukuba ube ngamaqhekeza angama-50, kodwa owona mthwalo kufuneka ube ngamaqhekeza angama-45 ukugcina indawo yokwandisa).
●Umphetho we-wafer kufuneka ube ≥2mm kude nesiphelo setanki yesikhephe ukukhusela iziphumo ze-plasma edge.
✔ Amacebiso Okwandisa Ubomi
● Ukulungiswa kokugquma: Xa uburhabaxa bomphezulu iRa＞1.2μm, ukugquma kweSiC kunokuphinda kufakwe kwi-CVD (indleko yi-40% ephantsi kunokutshintshwa).
✔ Uvavanyo lwarhoqo:
● Ngenyanga: Jonga ingqibelelo yokwambathisa usebenzisa i-interferometry yokukhanya okumhlophe.
●Ngekota: Hlalutya i-crystallization degree yesikhephe nge-XRD (i-quartz wafer boat ene-crystal phase> 5% ifuna ukutshintshwa).
4. Ziziphi iingxaki eziqhelekileyo?
Q1: Ngaba iPECVD isikhephezisetyenziswe kwinkqubo yeLPCVD?
A: Ayikhuthazwa! I-LPCVD inobushushu obuphezulu (ngokuqhelekileyo i-800-1100 ° C) kwaye idinga ukumelana noxinzelelo oluphezulu lwegesi. Ifuna ukusetyenziswa kwezinto ezixhathisayo ngakumbi kwiinguqu zobushushu (ezifana negraphite ye-isostatic), kunye noyilo lwe-slot kufuneka luqwalasele imbuyekezo yokwandisa i-thermal.
I-Q2: Indlela yokufumanisa ukuba umzimba wesikhephe awuphumelelanga?
A: Yeka ukusebenzisa ngoko nangoko ukuba kukho ezi mpawu zilandelayo:
Iintanda okanye i-coating peeling ibonakala kwiliso lenyama.
Ukutenxa okusemgangathweni kokufana kokwalekwa kwe-wafer ibe>5% kwiibhetshi ezintathu ezilandelelanayo.
Iqondo le-vacuum yegumbi lenkqubo lehle ngaphezu kwe-10%.
Q3: Isikhephe seGraphite ngokuchasene nesikhephe sequartz, ungakhetha njani?
Isiphelo : Izikhephe zegraphite zikhethwa kwimiba yokuvelisa ngobuninzi, ngelixa iinqanawa ze-quartz zithathelwa ingqalelo kuphando lwezenzululwazi / iinkqubo ezikhethekileyo.
Isiphelo:
Nangona iPECVD isikhepheayisosona sixhobo siphambili, “ngumgcini othuleyo” wozinzo lwenkqubo. Ukusuka ekukhetheni ukuya ekugcinweni, zonke iinkcukacha zinokuba yindawo ephambili yokuphucula isivuno. Ndiyathemba ukuba esi sikhokelo siya kukunceda ungene kwinkungu yobugcisa kwaye ufumane isisombululo esisiso sokunciphisa iindleko kunye nokuphucula ukusebenza kakuhle!
Ixesha lokuposa: Mar-06-2025