Iimpawu ze-silicon carbide ephinde yasetyenziswa
I-recrystalized silicon carbide (R-SiC) sisixhobo esisebenza kakuhle kakhulu esinobunzima obulandelayo emva kwedayimani, esenziwe kubushushu obuphezulu obungaphezulu kwama-2000℃. Igcina iipropati ezininzi ezintle zeSiC, ezinje ngamandla obushushu obuphezulu, ukumelana nokugqwala okunamandla, ukumelana nokuxinana okugqwesileyo, ukumelana nokuxinana okufanelekileyo kobushushu, njl.njl.
● Iipropati ezibalaseleyo zoomatshini. I-silicon carbide ephinde yasetyenziswa inamandla aphezulu kwaye iqinile kune-carbon fiber, iyamelana nefuthe eliphezulu, inokudlala kakuhle kwiindawo ezinobushushu obuphezulu, inokudlala ngcono ukulingana kwiimeko ezahlukeneyo. Ukongeza, ikwanokuguquguquka okuhle kwaye ayonakaliswa lula ngokuzolula nokugoba, nto leyo ephucula kakhulu ukusebenza kwayo.
● Ukumelana nokugqwala okuphezulu. I-silicon carbide ephinda isetyenziswe inokumelana nokugqwala okuphezulu kwiindidi ezahlukeneyo zemidiya, inokuthintela ukugqwala kweentlobo ngeentlobo zemidiya egqwalisayo, inokugcina iipropati zayo zoomatshini ixesha elide, inokunamathela ngamandla, ukuze ibe nobomi obude benkonzo. Ukongeza, ikwanayo nokuzinza okuhle kobushushu, inokuqhelana notshintsho oluthile lobushushu, iphucule isiphumo sayo sokusebenza.
● Ukusila akunciphi. Ngenxa yokuba inkqubo yokusila ayinciphi, akukho xinzelelo lushiyekileyo oluya kubangela ukuguguleka okanye ukuqhekeka kwemveliso, kwaye iindawo ezineemilo ezintsonkothileyo kunye nokuchaneka okuphezulu zinokulungiswa.
| 重结晶碳化硅物理特性 Iimpawu ezibonakalayo zeSilicon Carbide ephinde yasetyenziswa | |
| 性质 / Ipropati | 典型数值 / Ixabiso eliqhelekileyo |
| 使用温度/ Ubushushu bokusebenza (°C) | 1600°C (eneoksijini), 1700°C (indawo enciphisa umoya) |
| I-SiC含量/ Umxholo weSiC | > 99.96% |
| 自由Si含量/ Umxholo wasimahla we-Si | < 0.1% |
| 体积密度/Unizi lolwapho kuyiwa khona | 2.60-2.70 g/cm3 |
| 气孔率/ Ukuvuleka okubonakalayo | < 16% |
| 抗压强度/ Amandla oxinzelelo | > 600I-MPa |
| 常温抗弯强度/Amandla okugoba abandayo | 80-90 MPa (20°C) |
| 高温抗弯强度Amandla okugoba ashushu | 90-100 MPa (1400°C) |
| 热膨胀系数/ Ukwandiswa kobushushu @1500°C | 4.70 10-6/°C |
| 导热系数/Ukuqhuba kobushushu @1200°C | 23W/m•K |
| 杨氏模量/ Imodulus ethambileyo | 240 GPa |
| 抗热震性/ Ukumelana noxinzelelo lobushushu | Kuhle kakhulu |
I-VET Energy yi iumenzi wokwenyani weemveliso zegrafiti kunye nesilicon carbide ezenziwe ngokwezifiso ezine-CVD coating,ingabonelelaezahlukeneyoiindawo ezenzelwe wena zeshishini le-semiconductor kunye ne-photovoltaic. OIqela lakho lobuchwephesha livela kumaziko ophando aphambili asekhaya, linokubonelela ngezisombululo zezinto zobungcali ngakumbiyeyakho.
Sihlala siphuhlisa iinkqubo eziphambili ukuze sinikeze izixhobo eziphucukileyo ngakumbi,kwayebaye basebenza iteknoloji ekhethekileyo enelungelo elilodwa lomenzi wechiza, enokwenza ukubopha phakathi kwengubo kunye ne-substrate kube nzima kwaye kungabi lula ukwahlukana.
| I-CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo | |
| 性质 / Ipropati | 典型数值 / Ixabiso eliqhelekileyo |
| 晶体结构 / Ulwakhiwo lwekristale | Isigaba se-FCC β多晶，主要為（111）取向 |
| 密度 / Ubuninzi | 3.21 g/cm³ |
| 硬度 / Ubulukhuni | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Ubukhulu beenkozo | 2 ~ 10μm |
| 纯度 / Ucoceko lweekhemikhali | 99.99995% |
| 热容 / Umthamo wobushushu | 640 J·kg-1·K-1 |
| 升华温度 / Ubushushu bokunyibilikisa | 2700℃ |
| 抗弯强度 / Amandla okugobeka | I-415 MPa RT 4-point |
| 杨氏模量 / Imodulus yoLutsha | I-430 Gpa 4pt bend, 1300℃ |
| 导热系数 / I-ThermalUkuqhuba | 300W·m-1·K-1 |
| 热膨胀系数 / Ukwandiswa kobushushu (CTE) | 4.5×10-6K-1 |
Wamkelekile ngobubele ukuba undwendwele umzi-mveliso wethu, makhe sixoxe ngakumbi!
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