Njirimara nke carbide silicon a na-emegharị emegharị
Carbide silicon e ji aka rụọ (R-SiC) bụ ihe e ji arụ ọrụ nke ọma, nke siri ike karịa dayamọnd, nke a na-emepụta n'okpomọkụ dị elu karịa 2000℃. Ọ na-ejigide ọtụtụ ihe onwunwe dị mma nke SiC, dịka ike okpomọkụ dị elu, ike nchara siri ike, ike iguzogide oxidation dị mma, ezigbo ike iguzogide okpomọkụ na ihe ndị ọzọ.
● Njirimara igwe dị mma. Silicon carbide e ji ígwè rụọ nwere ike na nrụsi ike karịa eriri carbon, ọ na-eguzogide mmetụta dị elu, ọ na-arụ ọrụ nke ọma n'ebe okpomọkụ dị oke njọ, ọ na-arụ ọrụ nke ọma n'ọnọdụ dị iche iche. Na mgbakwunye, ọ na-enwekwa mgbanwe dị mma, ọ naghịkwa emebi ngwa ngwa site na ịgbatị na ịgbagọ, nke na-eme ka arụmọrụ ya ka mma nke ukwuu.
● Ike nchara dị elu. Carbide silicon e ji ígwè rụọ nke a na-emegharị emegharị nwere oke ike iguzogide nchara dị iche iche, nwere ike igbochi mbibi nke ọtụtụ ihe mgbasa ozi na-emebi emebi, nwere ike ịnọgide na-enwe ihe onwunwe ya ruo ogologo oge, nwee ike ijikọ siri ike, nke mere na ọ na-adịru ogologo oge. Na mgbakwunye, ọ nwekwara ezigbo nkwụsi ike okpomọkụ, nwere ike ịgbanwe na mgbanwe okpomọkụ ụfọdụ, melite mmetụta ojiji ya.
● Ịsa ihe anaghị ebelata. Ebe ọ bụ na usoro ịsa ihe anaghị ebelata, enweghị nrụgide fọdụrụ ga-akpata mgbanwe ma ọ bụ mgbawa nke ngwaahịa ahụ, a pụkwara ịkwadebe akụkụ ndị nwere ọdịdị dị mgbagwoju anya na oke nkenke.
| 重结晶碳化硅物理特性 Njirimara anụ ahụ nke Silicon Carbide Recrystallized | |
| 性质 / Ihe onwunwe | 典型数值 / Uru nkịtị |
| 使用温度/ Okpomọkụ ọrụ (°C) | 1600°C (na oxygen), 1700°C (ebe obibi na-ebelata) |
| SiC含量/ Ọdịnaya SiC | > 99.96% |
| 自由Si含量/ Ọdịnaya Si n'efu | <0.1% |
| 体积密度/Njupụta dị ukwuu | 2.60-2.70 g/cm3 |
| 气孔率/ Ntụpọ doro anya | <16% |
| 抗压强度/ Ike mkpakọ | > 600MPa |
| 常温抗弯强度/Ike ịgbagọ oyi | 80-90 MPa (20°C) |
| 高温抗弯强度Ike ịgbagọ ọkụ | 90-100 MPa (1400°C) |
| 热膨胀系数/ Mgbasawanye okpomọkụ @1500°C | 4.70 10-6/°C |
| 导热系数/Ọgbakọ okpomọkụ @1200°C | 23W/m•K |
| 杨氏模量/ Modulu Elastic | 240 GPA |
| 抗热震性/ Mgbochi ujo okpomọkụ | Ọ dị oke mma |
Ike VET bụ O nwere ike ịbụ na o meghị ihe ọbụla gbasara ya.ezigbo onye nrụpụta ngwaahịa graphite na silicon carbide ahaziri ahazi nwere mkpuchi CVD,ike inyedị iche icheakụkụ ahaziri ahazi maka ụlọ ọrụ semiconductor na photovoltaic. ONdị otu teknụzụ gị si n'ụlọ ọrụ nyocha kacha elu n'ime obodo, ha nwere ike inye azịza ihe ọkachamara karịamaka gị.
Anyị na-emepụta usoro dị elu mgbe niile iji nye ihe ndị ka elu,naAchọpụtala teknụzụ pụrụ iche nke nwere ikike pụrụ iche, nke nwere ike ime ka njikọ dị n'etiti mkpuchi ahụ na ihe mkpuchi ahụ sie ike ma ghara ịdị mfe ịgbawa.
| CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi | |
| 性质 / Ihe onwunwe | 典型数值 / Uru nkịtị |
| 晶体结构 / Nhazi kristal | FCC β nkebi多晶，主要为（111) 取向 |
| 密度 / Njupụta | 3.21 g/cm³ |
| 硬度 / Ike siri ike | 2500 维氏硬度： (ibu 500g) |
| 晶粒大小 / SiZe ọka | 2 ~ 10μm |
| 纯度 / Ịdị ọcha nke kemịkalụ | 99.99995% |
| 热容 / Ike Okpomọkụ | 640 J·kg-1·K-1 |
| 升华温度 / Okpomọkụ Sublimation | 2700℃ |
| 抗弯强度 / Ike nke Flexural | 415 MPa RT isi ihe anọ |
| 杨氏模量 / Modulu Young | 430 GPA 4pt gbagọrọ agbagọ, 1300℃ |
| 导热系数 / ThermalNhazigharị | 300W·m-1·K-1 |
| 热膨胀系数 / Mgbasawanye Okpomọkụ (CTE) | 4.5 × 10-6K-1 |
Nabata gị nke ọma ka ị bịa leta ụlọ ọrụ mmepụta ihe anyị, ka anyị nwee mkparịta ụka ọzọ!
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