Ngā āhuatanga o te karawiti silicon kua whakakākanotia anō
Ko te karawiti silicon kua whakakōkītia anō (R-SiC) he rauemi mahi-teitei, ko tōna pakeke te tuarua ki te taimana, ka hangaia i te pāmahana teitei i runga ake i te 2000℃. He maha ngā āhuatanga pai o te SiC e mau tonu ana, pērā i te kaha pāmahana teitei, te ātete kaha ki te waikura, te ātete pai ki te waikura, te ātete pai ki te ru wera me ētahi atu.
● Ngā āhuatanga miihini tino pai. He kaha ake, he pakari ake hoki te karawiti silicon kua whakakōkītia anō i te muka waro, he ātete nui ki te pānga, ka taea te mahi pai i roto i ngā taiao pāmahana tino kino, ka taea te mahi taurite pai ake i roto i ngā āhuatanga maha. Hei tāpiri, he pai hoki tōna ngāwari, ā, kāore e pakaru wawe i te totoro me te piko, ka tino whakapai ake i tana mahi.
● He ātete nui ki te waikura. He ātete nui te warowaihā silicon kua whakakōkīhia ki ngā momo rauemi, ka ārai i te mimiti o ngā momo rauemi waikura, ka pupuri i ōna āhuatanga miihini mō te wā roa, he kaha te piri, ā, he roa ake tōna ora mahi. Hei tāpiri, he pai hoki tōna pumau wera, ka taea te urutau ki tētahi whānuitanga o ngā huringa pāmahana, me te whakapai ake i tōna pānga tono.
● Kāore te mahi whakahinuhinu e mimiti. Nā te mea kāore te tukanga whakahinuhinu e mimiti, kāore he ahotea toenga e puta ai he rerekētanga, he ngatata rānei o te hua, ā, ka taea te whakarite i ngā wāhanga he uaua te āhua me te tino tika.
| 重结晶碳化硅物理特性 Ngā āhuatanga ā-tinana o te Silicon Carbide kua Whakakāhia anō | |
| 性质 / Taonga | 典型数值 / Uara Noa |
| 使用温度/ Te pāmahana mahi (°C) | 1600°C (me te hāora), 1700°C (taiao whakaiti) |
| SiC含量/ Ihirangi SiC | > 99.96% |
| 自由Si含量/ Ngā ihirangi Si Koreutu | < 0.1% |
| 体积密度/Kīanga papatipu | 2.60-2.70 karamu/cm3 |
| 气孔率/ Te āhua o te pūngao | < 16% |
| 抗压强度/ Kaha pēhanga | > 600MPa |
| 常温抗弯强度/Kaha piko makariri | 80-90 MPa (20°C) |
| 高温抗弯强度Kaha piko wera | 90-100 MPa (1400°C) |
| 热膨胀系数/ Te whānui wera i te 1500°C | 4.70 10-6/°C |
| 导热系数/Te kawe wera @1200°C | 23W/m•K |
| 杨氏模量/ Te tauwehenga rapa | 240 GPa |
| 抗热震性/ Ātete ki te ru wera | Tino pai |
Ko te Pūngao VET tekaihanga tūturu o ngā hua karāpeti me te karāpeti silicon kua whakaritea me te paninga CVD,ka taea te tukungā momongā wāhanga kua whakaritea mō te umanga semiconductor me te photovoltaic. ONō ngā umanga rangahau ā-rohe nui tō mātou tīma hangarau, ā, ka taea e rātou te whakarato i ngā otinga rauemi ngaio ake.māu.
Ka whakawhanake tonu mātou i ngā tukanga matatau hei whakarato i ngā rauemi matatau ake,mekua hangaia he hangarau motuhake kua patenttia, hei whakakaha ake i te hononga i waenga i te paninga me te papa, ā, hei whakaiti ake i te ngāwari o te wetewete.
| CVD SiC薄膜基本物理性能 Ngā āhuatanga ā-tinana taketake o te CVD SiCpaninga | |
| 性质 / Taonga | 典型数值 / Uara Noa |
| 晶体结构 / Hanganga Karaihe | Wāhanga β FCC多晶，主要为（111）取向 |
| 密度 / Kiato | 3.21 karamu/cm³ |
| 硬度 / Te pakeketanga | 2500 维氏硬度（500g kawenga） |
| 晶粒大小 / Rahi o te Witi | 2~10μm |
| 纯度 / Te Parakore o te Matū | 99.99995% |
| 热容 / Te kaha wera | 640 J·kg-1·K-1 |
| 升华温度 / Te Pāmahana Whakatōtō | 2700℃ |
| 抗弯强度 / Kaha Whakapiko | 415 MPa RT 4-ira |
| 杨氏模量 / Te Tauwehenga o te Young | 430 Gpa 4pt piko, 1300℃ |
| 导热系数 / Te whakamahanalTe kawe i te hiko | 300W·m-1·K-1 |
| 热膨胀系数 / Te Whanuitanga Wera (CTE) | 4.5×10-6K-1 |
Nau mai haere mai ki tō mātou wheketere, kia kōrero anō tātou!
