Cov khoom ntawm recrystallized silicon carbide
Recrystallized silicon carbide (R-SiC) yog ib yam khoom siv ua tau zoo heev uas muaj qhov nyuaj thib ob tsuas yog pob zeb diamond xwb, uas yog tsim los ntawm qhov kub siab tshaj 2000 ℃. Nws khaws cia ntau yam khoom zoo ntawm SiC, xws li lub zog kub siab, tiv taus corrosion zoo, tiv taus oxidation zoo heev, tiv taus thermal shock zoo thiab lwm yam.
● Cov khoom siv kho tshuab zoo heev. Recrystallized silicon carbide muaj zog thiab tawv dua li carbon fiber, tiv taus kev cuam tshuam siab, tuaj yeem ua tau zoo hauv qhov kub thiab txias heev, tuaj yeem ua tau zoo dua hauv ntau yam xwm txheej. Tsis tas li ntawd, nws kuj muaj kev ywj pheej zoo thiab tsis yooj yim puas los ntawm kev ncab thiab khoov, uas ua rau nws ua tau zoo dua.
● Tiv taus xeb tau zoo heev. Cov silicon carbide uas rov ua dua tshiab muaj kev tiv taus xeb tau zoo rau ntau yam khoom siv, tuaj yeem tiv thaiv kev puas tsuaj ntawm ntau yam khoom siv corrosive, tuaj yeem tswj nws cov khoom siv kho tshuab tau ntev, muaj kev nplaum zoo, yog li nws muaj lub neej ua haujlwm ntev dua. Tsis tas li ntawd, nws kuj muaj kev ruaj khov thermal zoo, tuaj yeem hloov kho rau qee qhov kev hloov pauv kub, txhim kho nws cov txiaj ntsig ntawm kev siv.
● Kev sintering tsis ntsws. Vim tias cov txheej txheem sintering tsis ntsws, tsis muaj kev ntxhov siab seem yuav ua rau deformation lossis tawg ntawm cov khoom, thiab cov khoom uas muaj cov duab nyuaj thiab qhov tseeb siab tuaj yeem npaj tau.
| 重结晶碳化硅物理特性 Cov khoom siv lub cev ntawm Recrystallized Silicon Carbide | |
| 性质 / Khoom vaj khoom tsev | 典型数值 / Tus nqi ib txwm muaj |
| 使用温度/ Kub ua haujlwm (°C) | 1600 ° C (nrog oxygen), 1700 ° C (txo qhov chaw ib puag ncig) |
| SiC含量/ Cov ntsiab lus SiC | > 99.96% |
| 自由Si 含量/ Cov ntsiab lus Si pub dawb | < 0.1% |
| 体积密度/Qhov ceev ntawm cov khoom loj | 2.60-2.70 g/cm33 |
| 气孔率Pom tseeb porosity | < 16% |
| 抗压强度/ Lub zog nias | > 600MPa |
| 常温抗弯强度/Lub zog khoov txias | 80-90 MPa (20°C) |
| 高温抗弯强度Lub zog khoov kub | 90-100 MPa (1400 ° C) |
| 热膨胀系数/ Kev nthuav dav ntawm cua sov @ 1500 ° C | 4.70 10-6/°C |
| 导热系数/Kev ua kom sov tau @1200 ° C | 23W/m•K |
| 杨氏模量/ Cov qauv elastic | 240 GPa |
| 抗热震性/ Kev tiv thaiv thermal poob siab | Zoo kawg nkaus |
VET Zog yog lubChaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide uas muaj CVD txheej,muaj peev xwm muab khoomntau yamcov khoom siv kho kom haum rau kev lag luam semiconductor thiab photovoltaic. Okoj pab neeg kev tshaj lij los ntawm cov tsev kawm tshawb fawb hauv tsev sab saum toj, tuaj yeem muab cov kev daws teeb meem ntau duarau koj.
Peb pheej tsim cov txheej txheem siab heev los muab cov ntaub ntawv siab dua,thiabtau ua haujlwm tawm ib txoj kev siv tshuab tshwj xeeb uas tau txais patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab lub substrate nruj dua thiab tsis yooj yim tawg.
| CVD SiC薄膜基本物理性能 Cov khoom siv lub cev yooj yim ntawm CVD SiCtxheej | |
| 性质 / Khoom vaj khoom tsev | 典型数值 / Tus nqi ib txwm muaj |
| 晶体结构 / Cov Qauv Siv Crystal | FCC β theem多晶, 主要为(111) Ib |
| 密度 / Qhov Ceev | 3.21 g/cm³ |
| 硬度 / Qhov nyuaj | 2500 维氏硬度 (500g load) |
| 晶粒大小 / Cov nplej loj | 2 ~ 10μm |
| 纯度 / Kev Ntshiab Tshuaj | 99.99995% |
| Cov duab / Peev Xwm Kub | 640 J·kg-1·K-1 |
| 升华温度 Kub Sublimation | 2700 ℃ |
| 抗弯强度 Lub zog flexural | 415 MPa RT 4-point |
| 杨氏模量 / Cov Modulus Hluas | 430 Gpa 4pt khoov, 1300 ℃ |
| 导热系数 / ThermalKev coj ua hluav taws xob | 300W·m-1·K-1 |
| 热膨胀系数 / Kev Nthuav Dav Kub (CTE) | 4.5 × 10-6K-1 |
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!
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