Ubwato bwa Silicon Carbide Wafer bwasubiwemo bufite CVD Coating

Ibisobanuro bigufi:

Ubwato bwa VET Energy Recrystalized Silicon Carbide Wafer ni ikintu cyiza cyane cyagenewe gutanga umusaruro uhoraho kandi wizewe mu gihe kirekire. Gifite ubushobozi bwo kurwanya ubushyuhe n'ubushyuhe bungana, ubuziranenge bukabije, kandi kirwanya isuri, bigatuma kiba igisubizo cyiza cyo gutunganya wafer.


Ibisobanuro birambuye ku gicuruzwa

Ibirango by'ibicuruzwa

Imiterere ya karubide ya silikoni yasubiwemo

Karubide ya silikoni ikoreshwa mu gusya (R-SiC) ni ibikoresho bikora neza cyane kandi bifite ubukana bwa kabiri nyuma ya diyama, ikaba ikora ku bushyuhe buri hejuru ya 2000°C. Igumana imiterere myiza ya SiC, nko gukomera ku bushyuhe bwinshi, kurwanya ingese cyane, kurwanya ogisijeni neza, kurwanya ubushyuhe neza n'ibindi.

● Imiterere myiza cyane ya mekanike. Karubide ya silikoni isubijwemo ifite imbaraga n'ubukana bwinshi kurusha fibre ya karuboni, irwanya ingaruka nyinshi, ishobora kugira imikorere myiza mu bushyuhe bukabije, ishobora kugira imikorere myiza mu bihe bitandukanye. Byongeye kandi, ifite ubushobozi bwo koroha kandi ntiyoroshye kwangirika no kurambura no kunama, ibyo bikaba birushaho kunoza imikorere yayo.

● Irwanya cyane ingese. Karubide ya silikoni isubijwemo ifite ubudahangarwa bwinshi ku ngese ku buryo bwinshi, ishobora gukumira isenyuka ry’ingese zitandukanye, ishobora kugumana imiterere yayo ya mekanike igihe kirekire, ifite ubushobozi bwo gufata neza, ku buryo imara igihe kirekire. Byongeye kandi, ifite ubushyuhe bwiza, ishobora kwihuza n’impinduka zimwe na zimwe z’ubushyuhe, inongera ingaruka zayo mu ikoreshwa ryayo.

● Gutunganya ibintu ntibigabanuka. Kubera ko uburyo bwo gutunganya ibintu butagabanuka, nta kintu na kimwe gisigaye gishobora gutuma ibicuruzwa bihinduka cyangwa bigacika, kandi ibice bifite imiterere igoye kandi bifite ubuhanga buhanitse bishobora gutegurwa.

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重结晶碳化硅物理特性

Imiterere ifatika ya Silicon Carbide yongeye gukoreshwa

性质 / Umutungo

典型数值 / Agaciro Gasanzwe

使用温度/ Ubushyuhe bw'akazi (°C)

1600°C (harimo ogisijeni), 1700°C (ibidukikije bigabanya)

SiC含量/ Ibikubiye muri SiC

> 99.96%

自由Si 含量/ Ibikubiyemo bya Si ku buntu

< 0.1%

体积密度/Ubucucike bw'umubyimba

2.60-2.70 g/cm3

气孔率/ Ubuso bugaragara nk'ubufite imyenge

< 16%

抗压强度/ Imbaraga zo gukanda

> 600MPa

常温抗弯强度/Imbaraga zo kunama zikonje

80-90 MPa (20°C)

高温抗弯强度Imbaraga zishyushye zo kunama

90-100 MPa (1400°C)

热膨胀系数/ Kwaguka k'ubushyuhe kuri 1500°C

4.70 10-6/°C

导热系数/Ubushobozi bwo gutwara ubushyuhe kuri 1200°C

23Ubuso/m•K

杨氏模量/ Moduli ya elastic

240 GPa

抗热震性/ Ubudahangarwa bw'ingufu ziterwa n'ubushyuhe

Ni byiza cyane

VET Energy ni iuruganda nyarwo rukora ibikoresho bya graphite na silicon carbide byihariye hamwe n'imvange ya CVD,ishobora gutangabitandukanyeibice byihariye byo mu nganda za semiconductor na photovoltaic. OItsinda ryanyu rya tekiniki rituruka mu bigo bikomeye by’ubushakashatsi mu gihugu, rishobora gutanga ibisubizo by’ibikoresho by’umwuga.kuri wowe.

Dukomeza guteza imbere inzira zigezweho kugira ngo dutange ibikoresho bigezweho,nabakoze ikoranabuhanga ryihariye rifite patenti, rishobora gutuma isano iri hagati y’igitambaro n’icyuma gifunga ibintu irushaho gukomera kandi ntigishobora gutandukana cyane.

CVD SiC薄膜基本物理性能

Imiterere y'ibanze ya CVD SiCgusiga

性质 / Umutungo

典型数值 / Agaciro Gasanzwe

晶体结构 / Imiterere ya kristu

Icyiciro cya FCC β多晶,主要为(111 )取向

密度 / Ubucucike

3.21 g/cm³

硬度 / Ubukomere

2500 维氏硬度( 500g umutwaro)

晶粒大小 / Ubunini bw'ibinyampeke

2 ~ 10μm

纯度 / Ubuziranenge bw'ibinyabutabire

99.99995%

热容 / Ubushobozi bwo gushyuha

640 J·kg-1·K-1

升华温度 / Ubushyuhe bwo gushyuha

2700℃

抗弯强度 / Imbaraga zo Kongera Uburemere

415 MPa RT ifite amanota 4

杨氏模量 / Modulus y'Abana

430 Gpa 4pt bend, 1300℃

导热系数 / ThermalUbushobozi bwo kuyobora

300W·m-1·K-1

热膨胀系数 / Kwagura ubushyuhe (CTE)

4.5×10-6K-1

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