Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorni igikoresho cyihariye gifasha kandi gishyushya gikoreshwa mu kubika no gushyushya substrates za semiconductor mu gihe cyo gukora nka Deposition cyangwa Epitaxy.

Imiterere yayo isanzwe igizwe n'umuzenguruko cyangwa ifite ishusho y'agasanduku gato, ubuso bwayo bufite imifuka myinshi cyangwa urubuga rwo gushyiramo uduce twa wafer, ishobora kuba ikomeye cyangwa ifite ubugari, bitewe n'uburyo bwo gushyushya.

Imirimo y'ingenzi ya epitaxial barrel susceptor:

1. Uburyo bwo gutwara ibiryo bya Wafer no kugenzura ubushyuhe
Ubuso bw'umusemburo bwubatswe n'imifuka myinshi ya wafer (nk'iy'igice cya gatandatu cyangwa igice cya kane), ishobora kwakira wafer 6-15 icyarimwe. Ubushyuhe bwinshi bwa grafiti ifite purity nyinshi (120-150W/mK) butuma ubushyuhe bwihuta, hamwe n'imikorere yo kuzenguruka (5-20 RPM), bigatuma ubushyuhe bw'ubuso bwa wafer buhinduka <± 1 ℃ n'ubunini bw'urwego rwa epitaxial bungana <1%.

2. Kunoza icyerekezo cy'ingufu zikora neza
Imiterere mito y'ubuso bw'ingufu ishobora guca ingaruka z'urwego rw'umupaka, bigatuma imyuka ikora neza (nka SiH4, NH3) ikwirakwira neza kandi ikanoza uburyo bwo gushyiramo umwuka mu buryo buhamye.

3. Kurwanya umwanda no kurinda ingese
Ibyuma bya grafiti bishobora kubora no kurekura imyanda y'icyuma (nka Fe, Ni) mu bushyuhe bwinshi, mu gihe irangi rya CVD SiC rifite ubugari bwa 100μm rishobora gukora uruzitiro rurerure rwo gukumira ihindagurika rya grafiti, bigatuma igipimo cy'ikosa rya wafer kigera kuri <0.1 defects / cm².

Porogaramu:
-Ikoreshwa cyane cyane mu gukura kwa silicon epitaxial
-Ikoreshwa kandi no mu bindi bikoresho bya semiconductor nka GaAs, InP, nibindi.

VET Energy ikoresha grafiti nziza cyane hamwe n'imvange ya CVD-SiC kugira ngo yongere ubuziranenge bw'ibinyabutabire:

1. Ibikoresho bya grafiti bifite isuku nyinshi
Ubushobozi bwo gutwara ubushyuhe bwinshi: ubushobozi bwo gutwara ubushyuhe bwa grafiti bukubye inshuro eshatu ugereranyije na silicon, bushobora kwimura ubushyuhe vuba buva ku isoko y'ubushyuhe bujya kuri wafer kandi bukagabanya igihe cyo gushyushya.
Ingufu za mekanike: Ubucucike bwa grafiti y'umuvuduko wa isostatic ≥ 1.85 g/cm³, ishobora kwihanganira ubushyuhe bwinshi buri hejuru ya 1200 ℃ idahinduka.

2. Gutwikira CVD SiC
Urusobe rwa β - SiC rukorwa ku buso bwa grafiti hakoreshejwe uburyo bwa chemical vapor deposition (CVD), rufite ubuziranenge bwa ≥ 99.99995%, ikosa ry’ubunini bw’igitambaro ni munsi ya ± 5%, kandi ubukana bw’ubuso buri munsi ya Ra0.5um.

3. Kunoza imikorere:
Ubudahangarwa ku ngaruka: ishobora kwihanganira imyuka myinshi yangiza nka Cl2, HCl, nibindi, ishobora kongera igihe cyo kubaho cya GaN epitaxy inshuro eshatu mu bidukikije bya NH3.
Gukomera ku bushyuhe: Igipimo cy'ubwiyongere bw'ubushyuhe (4.5 × 10-6/℃) gihuye na grafiti kugira ngo hirindwe ko irangi ricika bitewe n'ihindagurika ry'ubushyuhe.
Ubukomere n'Ubudahangarwa: Ubukomere bwa Vickers bugera kuri 28 GPa, bungana n'inshuro 10 kurusha grafiti kandi bushobora kugabanya ibyago byo gushwanyagurika kwa wafer.