Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorni igikoresho cyabugenewe cyihariye cyo gushyushya no gushyushya gikoreshwa mu gufata no gushyushya insimburangingo ya semiconductor mugihe cyo gukora nka Deposition cyangwa Epitaxy.

Imiterere yarwo ikubiyemo ubusanzwe silindrike cyangwa isa na barrale nkeya, hejuru igaragaramo imifuka myinshi cyangwa urubuga rwo gushyira wafer, birashobora kuba bishushanyije cyangwa bidafite ishingiro, bitewe nuburyo bwo gushyushya.

Ibikorwa byingenzi bya epitaxial barrel susceptor:

1. Gutwara Wafer no Kugenzura Ubushyuhe
Ubuso bwa susceptor bwateguwe hamwe nu mifuka myinshi ya wafer (nka gahunda ya mpande esheshatu cyangwa umunani), ishobora gushyigikira icyarimwe 6-15 icyarimwe. Ubushyuhe bwo hejuru bwubushyuhe bwa grafite (120-150W / mK) butuma ubushyuhe bwihuta, bufatanije nigikorwa cyo kuzunguruka (5-20 RPM), bigatuma ubushyuhe bwa wafer butandukana bwa <± 1 ℃ nuburinganire bwa epitaxial uburinganire bwa <1%.

2. Kunonosora icyerekezo cya gazi ya reaction
Microstructure yubuso bwa susceptor irashobora guca imbibi zurubibi, bigatuma habaho gukwirakwiza imyuka ya reaction (nka SiH4, NH3) no kunoza igipimo cyibipimo.

3. Kurwanya umwanda no kwirinda ruswa
Graphite substrate ikunda kubora no kurekura umwanda wicyuma (nka Fe, Ni) mubushyuhe bwinshi, mugihe icyuma cya CVD SiC gifite uburebure bwa 100 mm gishobora gukora inzitizi yuzuye kugirango ihagarike ihindagurika rya grafite, bikavamo igipimo cya wafer cya <0.1 inenge / cm ².

Porogaramu:
-Bisanzwe bikoreshwa mugukura kwa silicon epitaxial
-Ikindi gisabwa kuri epitaxy yibindi bikoresho bya semiconductor nka GaAs, InP, nibindi

VET Ingufu zikoresha grafite isukuye cyane hamwe na CVD-SiC kugirango yongere imiti ihamye:

1. Ibikoresho byiza bya grafite
Ubushyuhe bukabije bwumuriro: ubushyuhe bwumuriro wa grafite bwikubye inshuro eshatu ubwa silikoni, bushobora kwimura vuba ubushyuhe buturuka kumashyuza kuri wafer kandi bigabanya igihe cyo gushyuha.
Imbaraga za mashini: Umuvuduko wa Isostatike grafite ubucucike 85 1.85 g / cm ³, ushobora guhangana nubushyuhe bwo hejuru hejuru ya 1200 ℃ nta guhindagurika.

2. CVD SiC
A β - Igice cya SiC gikozwe hejuru ya grafite hifashishijwe imyuka ya chimique (CVD), ifite ubuziranenge bwa ≥ 99.99995%, ikosa rimwe ryo gutwikisha umubyimba ntiri munsi ya ± 5%, kandi ubukana bwubuso buri munsi ya Ra0.5um.

3. Kunoza imikorere:
Kurwanya ruswa: irashobora kwihanganira imyuka myinshi yangirika nka Cl2, HCl, nibindi, irashobora kongera igihe cya epitaxy ya GaN inshuro eshatu mubidukikije bya NH3.
Ubushyuhe bwumuriro: Coefficent yo kwaguka kwubushyuhe (4.5 × 10-6 / ℃) ihuye na grafite kugirango wirinde guturika biturutse ku ihindagurika ryubushyuhe.
Gukomera no Kwambara Kurwanya: Ubukomezi bwa Vickers bugera kuri 28 GPa, bukubye inshuro 10 kurenza grafite kandi burashobora kugabanya ibyago byo gushushanya wafer.