1. Michina yesemiconductor yechizvarwa chechitatu
Tekinoroji ye semiconductor yechizvarwa chekutanga yakagadzirwa zvichibva pazvinhu zve semiconductor zvakaita seSi naGe. Ndiyo hwaro hwezvinhu zvekugadzirwa kwema transistors uye tekinoroji ye integrated circuit. Zvinhu zve semiconductor zvechizvarwa chekutanga zvakaisa hwaro hweindasitiri yemagetsi muzana remakore rechi20 uye ndizvo zvinhu zvekutanga zve tekinoroji ye integrated circuit.
Zvinhu zve semiconductor zvechizvarwa chechipiri zvinosanganisira gallium arsenide, indium phosphide, gallium phosphide, indium arsenide, aluminium arsenide pamwe chete nemakemikari azvo eternary. Zvinhu zve semiconductor zvechizvarwa chechipiri ndizvo hwaro hweindasitiri yeruzivo rwe optoelectronic. Pachikonzero ichi, maindasitiri ane hukama akadai semwenje, display, laser, uye photovoltaics akagadzirwa. Anoshandiswa zvakanyanya muindasitiri yeruzivo yemazuva ano uye maindasitiri e optoelectronic display.
Zvinhu zvinomiririrwa nezvinhu zve semiconductor zvechizvarwa chechitatu zvinosanganisira gallium nitride nesilicon carbide. Nekuda kwehupamhi hwebhendi razvo, kumhanya kwakanyanya kweelectron saturation drift, high thermal conductivity, uye high breakdown field strength, zvinhu zvakanaka zvekugadzirira michina yemagetsi ine simba rakawanda, high-frequency, uye low-loss. Pakati pazvo, michina yemagetsi yesilicon carbide ine zvakanakira zve high-energy density, low energy consumption, uye small size, uye ine mikana yakawanda yekushandisa mumotokari itsva dzesimba, photovoltaics, rail transportation, big data, nedzimwe nzvimbo. Midziyo yeGallium nitride RF ine zvakanakira zve high frequency, high energy, wide bandwidth, low energy consumption uye small size, uye ine mikana yakawanda yekushandisa mu 5G communications, Internet of Things, military radar nedzimwe nzvimbo. Pamusoro pezvo, michina yemagetsi yakavakirwa pa gallium nitride yakashandiswa zvakanyanya mumunda une voltage shoma. Pamusoro pezvo, mumakore achangopfuura, zvinhu zvitsva zve gallium oxide zvinotarisirwa kuumba technical complementation neSiC neGaN technologies dziripo, uye zvine mikana inogona kushandiswa muminda ine voltage shoma ne high-voltage.
Zvichienzaniswa nezvinhu zve semiconductor zvechizvarwa chechipiri, zvinhu zve semiconductor zvechizvarwa chechitatu zvine upamhi hwakakura hwe bandgap (upamhi hwe bandgap hweSi, chinhu chakajairika che semiconductor yechizvarwa chekutanga, inenge 1.1eV, upamhi hwe bandgap hweGaAs, chinhu chakajairika che semiconductor yechizvarwa chechipiri, inenge 1.42eV, uye upamhi hwe bandgap hweGaN, chinhu chakajairika che semiconductor yechizvarwa chechitatu, huri pamusoro pe 2.3eV), kuramba kwakasimba kwemwaranzi, kuramba kwakasimba kumagetsi emagetsi, uye kuramba kupisa kwakanyanya. Zvinhu zve semiconductor zvechizvarwa chechitatu zvine upamhi hwakakura hwe bandgap zvinonyanya kukodzera kugadzirwa kwemidziyo yemagetsi inodzivirira mwaranzi, high-frequency, high-power uye high-integration-density. Mashandisirwo azvo mumidziyo ye microwave radio frequency, LEDs, lasers, midziyo yemagetsi nedzimwe nzvimbo zvakakwezva kutariswa kukuru, uye zvakaratidza mikana yakakura yekuvandudza mukutaurirana kwemafoni, smart grids, transit yechitima, mota itsva dzesimba, consumer electronics, uye ultraviolet neblue-green light devices [1].
Mufananidzo wacho unobva: CASA, Zheshang Securities Research Institute
Mufananidzo 1 Chiyero chenguva yemudziyo wesimba reGaN uye fungidziro
Chimiro uye hunhu hwezvinhu zveII GaN
GaN imhando yebandgap yakananga. Upamhi hwebandgap yechimiro chewurtzite patembiricha yemumba hunosvika 3.26eV. Zvinhu zveGaN zvine zvivakwa zvitatu zvikuru zvekristaro, zvinoti wurtzite structure, sphalerite structure uye rock salt structure. Pakati pazvo, chimiro chewurtzite ndicho chimiro chekristaro chakasimba kwazvo. Mufananidzo 2 idhayagiramu yechimiro chehexagonal wurtzite cheGaN. Chimiro chewurtzite chezvinhu zveGaN ndechechimiro chakabatana nehexagonal. Sero rega rega rine maatomu gumi nemaviri, anosanganisira maatomu matanhatu eN uye maatomu matanhatu eGa. Atomu yega yega yeGa (N) inoumba chisungo nemaatomu mana eN (Ga) ari pedyo uye akagadzirwa nenzira yeABABAB… munzira ye[0001] [2].
Mufananidzo 2. Maumbirwo eWurtzite dhayagiramu yemasero ekristalo eGaN
III Substrates dzinowanzoshandiswa dzeGaN epitaxy
Zvinoita sekuti epitaxy yakafanana paGaN substrates ndiyo sarudzo yakanakisisa yeGaN epitaxy. Zvisinei, nekuda kwesimba guru reGaN, kana tembiricha yasvika pakunyunguduka kwe2500℃, kumanikidzwa kwayo kwekuora kunoenderana neinenge 4.5GPa. Kana kumanikidzwa kwekuora kwakaderera pane kumanikidzwa uku, GaN hainyungudike asi inoora zvakananga. Izvi zvinoita kuti matekinoroji ekugadzirira substrate akakura akadai seCzochralski method asakodzere kugadzirira GaN single crystal substrates, zvichiita kuti GaN substrates dziome kugadzira uye dzinodhura. Nokudaro, substrates dzinowanzoshandiswa mukukura kweGaN epitaxial dzinosanganisira Si, SiC, sapphire, nezvimwewo. [3].
Chati 3 GaN uye maparamita ezvinhu zvinoshandiswa zvakanyanya pasita
GaN epitaxy pamusoro pesafiri
Safira ine hunhu hwemakemikari hwakagadzikana, yakachipa, uye yakakura muindasitiri yekugadzira zvinhu zvikuru. Nokudaro, yave imwe yezvinhu zvekutanga uye zvinoshandiswa zvakanyanya mukugadzira michina ye semiconductor. Seimwe yezvikamu zvinoshandiswa zvakanyanya zveGaN epitaxy, matambudziko makuru anofanirwa kugadziriswa ezvikamu zvesafira ndeaya:
✔ Nekuda kwekusawirirana kukuru pakati pesapphire (Al2O3) neGaN (inenge 15%), huwandu hwechikanganiso pakati peepitaxial layer nesubstrate hwakakwira zvikuru. Kuti kuderedza migumisiro yayo yakaipa, substrate inofanira kuitiswa kurapwa kwakaoma usati watanga kuita epitaxy. Usati warima GaN epitaxy pasapphire substrates, substrate surface inofanira kutanga yacheneswa zvakanyanya kubvisa tsvina, kukuvara kwe residual polishing, nezvimwewo, uye kugadzira matanho nematanho epamusoro. Zvadaro, substrate surface inonatswa ne nitride kuti ichinje hunhu hwekunyorovesa hweepitaxial layer. Pakupedzisira, AlN buffer layer yakatetepa (inowanzova 10-100nm gobvu) inofanira kuiswa pamusoro pesubstrate uye inonamirwa patembiricha yakaderera kugadzirira kukura kwekupedzisira kwe epitaxial. Kunyangwe zvakadaro, huwandu hwe dislocation mumafirimu eGaN epitaxial anorimwa pasapphire substrates huchiri hwakakwira kupfuura hwe homoepitaxial films (inenge 1010cm-2, zvichienzaniswa ne zero dislocation density mumafirimu esilicon homoepitaxial kana gallium arsenide homoepitaxial, kana pakati pe102 ne104cm-2). Defect density yakakwira inoderedza kufamba kwe carrier, nokudaro ichipfupisa hupenyu hwe carrier minority uye ichideredza thermal conductivity, zvese izvi zvichideredza mashandiro emuchina [4];
✔ Kuwanda kwemafuta eSapphire kwakakura kupfuura kweGaN, saka kumanikidzwa kwemuviri kwebiaxial kuchagadzirwa mu epitaxial layer panguva yekutonhorera kubva pakupisa kwekuisa mvura kusvika pakupisa kwemukamuri. Kune mafirimu epitaxial akakora, kushushikana uku kunogona kukonzera kutsemuka kwefirimu kana kunyange substrate;
✔ Kana tichienzanisa nedzimwe substrates, kupisa kwe substrates dzesafire kwakaderera (inenge 0.25W*cm-1*K-1 pa100℃), uye kushanda kwekupisa kwakashata;
✔ Nekuda kwekusakwanisa kwayo kufambisa zvinhu zvakanaka, zvinhu zvesapphire hazvibatsiri kubatanidzwa uye kushandiswa kwazvo nezvimwe zvinhu zve semiconductor.
Kunyangwe huwandu hwakaipa hwemaGaN epitaxial layers anorimwa pasapphire substrates hwakakwira, hazviratidzike sekuti zvinoderedza zvakanyanya mashandiro emagetsi eGaN-based blue-green LEDs, sakasapphire substrates dzichiri kushandiswa zvakanyanya kune maGaN-based LEDs.
Nekuvandudzwa kwekushandiswa kutsva kwemidziyo yeGaN yakadai semalaser kana mimwe midziyo yesimba ine simba rakawanda, zvikanganiso zvemidziyo yesafire zvave zvichiwedzera kuva muganho pakushandiswa kwayo. Pamusoro pezvo, nekuvandudzwa kwetekinoroji yekukura kweSiC substrate, kudzikiswa kwemitengo uye kukura kwetekinoroji yeGaN epitaxial pamidziyo yeSi, tsvakiridzo yakawanda pakukura kweGaN epitaxial layers pamidziyo yesafire yakaratidza zvishoma nezvishoma mafambiro ekutonhora.
GaN epitaxy paSiC
Zvichienzaniswa nesafire, maSiC substrates (4H- uye 6H-crystals) ane lattice miscompatibility diki neGaN epitaxial layers (3.1%, yakaenzana ne [0001] oriented epitaxial films), high thermal conductivity (inenge 3.8W*cm-1*K-1), nezvimwewo. Pamusoro pezvo, conductivity yeSiC substrates inobvumirawo kugadzirwa kwemagetsi kumashure kwe substrate, izvo zvinobatsira kurerutsa chimiro chemuchina. Kuvapo kwezvibatsiro izvi kwakakwezva vaongorori vakawanda kuti vashande paGaN epitaxy pa silicon carbide substrates.
Zvisinei, kushanda zvakananga paSiC substrates kudzivirira kukura kweGaN epilayers kunosanganawo nematambudziko akawanda, kusanganisira zvinotevera:
✔ Kuomarara kwepamusoro kweSiC substrates kwakanyanya kupfuura kwesapphire substrates (sapphire roughness 0.1nm RMS, SiC roughness 1nm RMS), SiC substrates dzine kuomarara kwakanyanya uye mashandiro asina kunaka ekugadzirisa, uye kuomarara uku uye kukuvara kwekupukuta kwezvakasara zvimwe zvezvikonzero zvezvikanganiso muGaN epilayers.
✔ Kuwanda kweSiC substrates kunokonzerwa ne screw dislocation kwakakwira (dislocation density 103-104cm-2), screw dislocations dzinogona kupararira kusvika kuGaN epilayer uye kuderedza mashandiro emudziyo;
✔ Kurongeka kwemaatomu pamusoro pe substrate kunokonzera kuumbwa kwema stacking faults (BSFs) muGaN epilayer. Kune epitaxial GaN paSiC substrates, kune akawanda ma atomic arrangement orders pa substrate, zvichikonzera kusawirirana kwekutanga kweatomu stacking order ye epitaxial GaN layer pairi, iyo inowanzoita stacking faults. Stacking faults (SFs) dzinounza minda yemagetsi yakavakwa mukati me c-axis, zvichikonzera matambudziko akadai sekubuda kwemidziyo yekuparadzanisa vatakuri ve in-plane;
✔ Kuwanda kwekupisa kweSiC substrate kudiki pane kweAlN neGaN, izvo zvinokonzera kuunganidzwa kwekupisa pakati peepitaxial layer nesubstrate panguva yekutonhora. Waltereit naBrand vakafungidzira zvichibva pamhedzisiro yavo yekutsvagisa kuti dambudziko iri rinogona kuderedzwa kana kugadziriswa nekukura GaN epitaxial layers paAlN nucleation layers dzakatetepa, dzakasimba;
✔ Dambudziko rekusanyorova kwemaatomu eGa. Pakukura maGaN epitaxial layers zvakananga pamusoro peSiC, nekuda kwekunyorova kwakashata pakati pemaatomu maviri, GaN inokurumidza kukura mu3D island surface. Kuisa buffer layer ndiyo mhinduro inonyanya kushandiswa yekuvandudza mhando yezvinhu zve epitaxial muGaN epitaxy. Kuisa AlN kana AlxGa1-xN buffer layer kunogona kuvandudza kunyorova kweSiC surface uye kuita kuti GaN epitaxial layer ikure muzvikamu zviviri. Pamusoro pezvo, inogonawo kudzora kushushikana uye kudzivirira kusakwana kwe substrate kuti isasvike kuGaN epitaxy;
✔ Tekinoroji yekugadzirira maSiC substrates haina kukura, mutengo we substrate wakakwira, uye kune vatengesi vashoma uye kuwanikwa kwacho kushoma.
Ongororo yaTorres nevamwe inoratidza kuti kutema substrate yeSiC neH2 pakupisa kwakanyanya (1600°C) epitaxy isati yasvika kunogona kugadzira chimiro chakarongeka pamusoro pe substrate, nokudaro kuwana firimu reAlN epitaxial remhando yepamusoro kupfuura kana richinge rakura zvakananga pamusoro pe substrate yekutanga. Ongororo yaXie nechikwata chake inoratidzawo kuti kutema pretreatment ye silicon carbide substrate kunogona kuvandudza zvakanyanya chimiro chepamusoro uye kunaka kwekristaro yeGaN epitaxial layer. Smith nevamwe vakaona kuti kupatsanurwa kweshinda kunobva ku substrate/buffer layer uye buffer layer/epitaxial layer interfaces zvine chekuita nekutsetseka kwe substrate [5].
Mufananidzo 4 TEM morphology yemasampuli eGaN epitaxial layer akarimwa pa 6H-SiC substrate (0001) pasi pemamiriro akasiyana ekurapa pamusoro (a) kuchenesa makemikari; (b) kuchenesa makemikari + kurapa hydrogen plasma; (c) kuchenesa makemikari + kurapa hydrogen plasma + 1300℃ hydrogen heat treatment kwemaminitsi makumi matatu
GaN epitaxy paSi
Kana tichienzanisa nesilicon carbide, sapphire nedzimwe substrates, maitiro ekugadzira silicon substrate akura, uye anogona kupa substrates dzakakura dzakakura dzine mashandiro anodhura zvakanyanya. Panguva imwe chete, mafambiro ekupisa uye mafambiro emagetsi akanaka, uye maitiro eSi electronic device akura. Mikana yekubatanidza zvakakwana optoelectronic GaN devices neSi electronic devices mune ramangwana inoitawo kuti kukura kweGaN epitaxy pasilicon kunakidze zvikuru.
Zvisinei, nekuda kwemusiyano mukuru muzvirambidzo zve lattice pakati pe substrate yeSi nezvinhu zveGaN, epitaxy yakasiyana yeGaN pa substrate yeSi i epitaxy yakajairika isina kurongeka, uye inofanirawo kutarisana nematambudziko akatevedzana:
✔ Dambudziko resimba rekushandisa pamusoro penzvimbo. Kana GaN ikakura paSi substrate, pamusoro peSi substrate inotanga yaiswa nitride kuti igadzire amorphous silicon nitride layer isingakonzeri nucleation uye kukura kwe high-density GaN. Pamusoro pezvo, Si surface inotanga yabata Ga, iyo ichaparadza pamusoro peSi substrate. Pakupisa kwakanyanya, kuora kweSi surface kuchapararira muGaN epitaxial layer kuti igadzire madonhwe matema esilicon.
✔ Kusawirirana kuripo pakati peGaN neSi kwakakura (~17%), izvo zvinozotungamira pakuumbwa kwe "high-density threading dislocations" uye kuderedza zvakanyanya kunaka kwe "epitaxial layer";
✔ Kana tichienzanisa neSi, GaN ine chiyero chikuru chekuwedzera kwekupisa (chiyero chekuwedzera kwekupisa cheGaN chingangoita 5.6×10-6K-1, chiyero chekuwedzera kwekupisa cheSi chingangoita 2.6×10-6K-1), uye mitswe inogona kugadzirwa muGaN epitaxial layer panguva yekutonhorera kwekupisa kwe epitaxial kusvika patembiricha yemumba;
✔ Si inobatana neNH3 pakupisa kwakanyanya kuti igadzire polycrystalline SiNx. AlN haigone kuumba nucleus yakatarisana nepolycrystalline SiNx, izvo zvinoita kuti GaN layer yakazokura ive isina kurongeka uye huwandu hwakawanda hwezvikanganiso, zvichikonzera kristaro isina kunaka yeGaN epitaxial layer, uye kutoomera kugadzira GaN epitaxial layer imwe chete [6].
Kuti vagadzirise dambudziko rekusawirirana kukuru kwelattice, vaongorori vakaedza kuisa zvinhu zvakaita seAlAs, GaAs, AlN, GaN, ZnO, uye SiC semabuffer layers paSi substrates. Kuti vadzivise kuumbwa kwepolycrystalline SiNx uye kuderedza migumisiro yayo yakaipa pamhando yekristaro yezvinhu zveGaN/AlN/Si (111), TAl inowanzo fanirwa kuiswa kwenguva yakati epitaxial buffer layer isati yakura kudzivirira NH3 kuti isashande nepamusoro peSi yakafumurwa kuti igadzire SiNx. Pamusoro pezvo, matekinoroji epitaxial akadai se patterned substrate technology anogona kushandiswa kuvandudza mhando ye epitaxial layer. Kuvandudzwa kwetekinoroji idzi kunobatsira kudzivirira kuumbwa kweSiNx pa epitaxial interface, kukurudzira kukura kwemativi maviri kweGaN epitaxial layer, uye kuvandudza mhando yekukura kwe epitaxial layer. Pamusoro pezvo, AlN buffer layer inounzwa kuti itsigire tensile stress inokonzerwa nemusiyano mu thermal expansion coefficients kudzivirira kuputika muGaN epitaxial layer pasilicon substrate. Ongororo yaKrost inoratidza kuti pane hukama hwakanaka pakati pekukora kweAlN buffer layer nekuderera kwekumanikidzwa. Kana ukobvu hwebuffer layer hwasvika 12nm, epitaxial layer yakakora kupfuura 6μm inogona kukura pane silicon substrate kuburikidza nehurongwa hwakakodzera hwekukura pasina epitaxial layer yakatsemuka.
Mushure mekuedza kwenguva refu kwevaongorori, mhando yeGaN epitaxial layers inorimwa pa silicon substrates yakagadziridzwa zvakanyanya, uye zvishandiso zvakaita se field effect transistors, Schottky barrier ultraviolet detectors, blue-green LEDs uye ultraviolet lasers zvakafambira mberi zvikuru.
Muchidimbu, sezvo maGaN epitaxial substrates anoshandiswa kazhinji ari epitaxy akasiyana, ese anosangana nematambudziko akafanana akadai sekusawirirana kwe lattice uye mutsauko mukuru mu thermal expansion coefficients kusvika padanho rakasiyana. Mahomogeneous epitaxial GaN substrates anogumira pakukura kwetekinoroji, uye mahomogeneous epitaxial GaN substrates haasati agadzirwa zvakanyanya. Mutengo wekugadzira wakakwira, saizi ye substrate idiki, uye mhando ye substrate haina kunaka. Kugadzirwa kweGaN epitaxial substrates itsva uye kuvandudzwa kwe epitaxial quality zvichiri chimwe chezvinhu zvakakosha zvinodzivisa kufambira mberi kweindasitiri yeGaN epitaxial.
IV. Nzira dzakajairika dzeGaN epitaxy
MOCVD (kuiswa kwemakemikari emhepo)
Zvinoita sekuti epitaxy yakafanana paGaN substrates ndiyo sarudzo yakanakisisa yeGaN epitaxy. Zvisinei, sezvo zvinhu zvinotangira makemikari evapor deposition iri trimethylgallium neammonia, uye gasi rinotakura iri hydrogen, tembiricha yekukura kweMOCVD inenge 1000-1100℃, uye mwero wekukura kweMOCVD ungangoita ma microns mashoma paawa. Inogona kugadzira nzvimbo dzakadzika padanho reatomu, iyo yakakodzera zvikuru pakukura kwe heterojunctions, quantum wells, superlattices nezvimwe zvivakwa. Mwero wayo wekukura nekukurumidza, kufanana kwakanaka, uye kukodzera kukura kwenzvimbo huru uye multi-piece zvinowanzo shandiswa mukugadzirwa kwemaindasitiri.
MBE (molecular beam epitaxy)
Mu molecular beam epitaxy, Ga inoshandisa chinhu chinobva kumasero, uye active nitrogen inowanikwa kubva kunitrogen kuburikidza neRF plasma. Kana ichienzaniswa nenzira yeMOCVD, tembiricha yekukura kweMBE yakaderera ne350-400℃. Tembiricha yekukura yakaderera inogona kudzivirira kusvibiswa kunogona kukonzerwa nenzvimbo dzinopisa zvakanyanya. Sisitimu yeMBE inoshanda pasi pevacuum yakanyanya, iyo inoibvumira kubatanidza nzira dzakawanda dzekuona mukati. Panguva imwe chete, mwero wayo wekukura uye kugona kwayo kugadzira hazvigone kuenzaniswa neMOCVD, uye inoshandiswa zvakanyanya mukutsvagisa kwesainzi [7].
Mufananidzo 5 (a) Eiko-MBE schematic (b) MBE main reaction chamber schematic
Nzira yeHVPE (hydride vapor phase epitaxy)
Zvinotangira nzira yehydride vapor phase epitaxy ndiGaCl3 neNH3. Detchprohm nevamwe vakashandisa nzira iyi kukura GaN epitaxial layer mazana ema microns akakora pamusoro pe substrate yesafire. Mukuyedza kwavo, layer yeZnO yakasimwa pakati pe substrate yesafire ne epitaxial layer se buffer layer, uye epitaxial layer yakabviswa pamusoro pe substrate. Zvichienzaniswa neMOCVD neMBE, chinhu chikuru chenzira yeHVPE ndechekuti yakakura kukura, iyo yakakodzera kugadzirwa kwe layer dzakakora uye zvinhu zvakawanda. Zvisinei, kana ukobvu hwe epitaxial layer huchidarika 20μm, epitaxial layer inogadzirwa nenzira iyi inogona kutsemuka.
Akira USUI yakaunza tekinoroji ye substrate yakagadzirwa nenzira iyi. Vakatanga vakura ganda rakatetepa reGaN epitaxial rine ukobvu hwe1-1.5μm paganda resafire vachishandisa nzira yeMOCVD. GaN buffer layer ine ukobvu hwe20nm yakakura pasi pemamiriro ekupisa akaderera uye GaN layer yakakura pasi pemamiriro ekupisa akakwirira. Zvadaro, pa430℃, jira reSiO2 rakaiswa pamusoro peganda re epitaxial, uye mitsetse yemahwindo yakagadzirwa pafirimu reSiO2 ne photolithography. Nzvimbo yemitsetse yaive 7μm uye upamhi hwemask hwaibva pa1μm kusvika 4μm. Mushure mekuvandudzwa uku, vakawana jira reGaN epitaxial paganda resafire rine dhayamita ye2-inch rakanga risina kutsemuka uye rakatsetseka segirazi kunyangwe ukobvu hwacho hwakawedzera kusvika makumi kana mazana ema microns. Density yekukanganisa yakaderedzwa kubva pa109-1010cm-2 yenzira yetsika yeHVPE kusvika pa6×107cm-2. Vakaratidzawo mukuyedza kuti kana mwero wekukura ukadarika 75μm/awa, pamusoro pemuenzaniso paizova pakaoma [8].
Mufananidzo 6 Mufananidzo weSubstrate Schematic
V. Pfupiso uye Maonero
Zvinhu zveGaN zvakatanga kubuda muna 2014 apo LED yebhuruu yakahwina Mubairo weNobel muFizikisi gore iroro, uye yakapinda mumunda weveruzhinji wekushandisa nekukurumidza kuchaja mumunda wezvemagetsi evatengi. Kutaura zvazviri, zvishandiso mumagetsi ekuwedzera simba nemidziyo yeRF zvinoshandiswa muzviteshi zve5G izvo vanhu vazhinji vasingakwanise kuona zvakabudawo chinyararire. Mumakore achangopfuura, kufambira mberi kwemidziyo yemagetsi yeGaN-based automotive-grade kunotarisirwa kuvhura nzvimbo itsva dzekukura kwemusika weGaN material application.
Kudiwa kukuru kwemusika kuchasimudzira kuvandudzwa kwemaindasitiri nematekinoroji ane chekuita neGaN. Nekukura uye kuvandudzika kwecheni yemaindasitiri ane chekuita neGaN, matambudziko anotarisana netekinoroji yeGaN epitaxial iripo achagadziriswa kana kukundwa. Mune ramangwana, vanhu vachagadzira matekinoroji matsva epitaxial uye sarudzo dzakanaka kwazvo dzesubstrate. Panguva iyoyo, vanhu vachakwanisa kusarudza tekinoroji yekutsvagisa yekunze yakakodzera uye substrate yemamiriro akasiyana ekushandisa zvichienderana nehunhu hwemamiriro ekushandisa, uye kugadzira zvigadzirwa zvakagadzirwa nemakwikwi zvakanyanya.
Nguva yekutumira: Chikumi-28-2024