1. Ngā haurua-whakatipuranga tuatoru
I whakawhanakehia te hangarau haurua-ā-ira o te whakatupuranga tuatahi i runga i ngā rauemi haurua-ā-ira pērā i te Si me te Ge. Koinei te pūtake rauemi mō te whanaketanga o ngā transistors me te hangarau ara iahiko whakauru. Nā ngā rauemi haurua-ā-ira o te whakatupuranga tuatahi i whakatakoto te turanga mō te umanga hiko i te rautau 20, ā, koinei ngā rauemi taketake mō te hangarau ara iahiko whakauru.
Ko ngā rauemi haurua-whakatupuranga tuarua ko te gallium arsenide, te indium phosphide, te gallium phosphide, te indium arsenide, te konumohe arsenide me ō rātou matū tuatoru. Ko ngā rauemi haurua-whakatupuranga tuarua te tūāpapa o te umanga mōhiohio optoelectronic. I runga i tēnei kaupapa, kua whakawhanakehia ngā umanga e pā ana pēnei i te rama, te whakaaturanga, te laser, me te photovoltaics. He whānuitia te whakamahinga o ēnei i roto i ngā umanga hangarau mōhiohio me te whakaaturanga optoelectronic o nāianei.
Ko ngā rauemi e whakaatu ana i ngā rauemi semiconductor o te tuatoru o ngā whakatipuranga ko te gallium nitride me te silicon carbide. Nā te whānui o te āputa roopu, te tere tere o te rerenga irahiko, te kawe wera nui, me te kaha o te mara pakaru, he rauemi pai ēnei mō te whakarite i ngā taputapu hiko kiato mana teitei, auau teitei, me te iti o te ngaronga. I roto i ēnei, ko ngā taputapu hiko silicon carbide he painga o te kiato pūngao teitei, te iti o te whakapaunga pūngao, me te iti o te rahi, ā, he whānui ngā tono i roto i ngā waka hiko hou, ngā photovoltaics, te kawe tereina, te raraunga nui, me ētahi atu mara. Ko ngā taputapu RF Gallium nitride he painga o te auau teitei, te kaha teitei, te whānui o te whānui, te iti o te whakapaunga pūngao me te iti o te rahi, ā, he whānui ngā tono i roto i ngā whakawhitiwhiti kōrero 5G, te Ipurangi o ngā Mea, te radar hōia me ētahi atu mara. Hei tāpiri, kua whānui te whakamahinga o ngā taputapu hiko e hangai ana ki te gallium nitride i roto i te mara ngaohiko iti. Hei tāpiri, i ngā tau tata nei, e tumanakohia ana ka hanga e ngā rauemi gallium oxide hou he hononga hangarau ki ngā hangarau SiC me GaN o nāianei, ā, he pūmanawa tono pea i roto i ngā mara auau iti me te ngaohiko teitei.
Ki te whakatauritea ki ngā rauemi haurua-whakakotahi o te whakatupuranga tuarua, he whānui ake te whānui o te āputa o ngā rauemi haurua-whakakotahi o te whakatupuranga tuatoru (ko te whānui o te āputa o Si, he rauemi noa o te rauemi haurua-whakakotahi o te whakatupuranga tuatahi, tata ki te 1.1eV, ko te whānui o te āputa o GaAs, he rauemi noa o te rauemi haurua-whakakotahi o te whakatupuranga tuarua, tata ki te 1.42eV, ā, ko te whānui o te āputa o GaN, he rauemi noa o te rauemi haurua-whakakotahi o te whakatupuranga tuatoru, kei runga ake i te 2.3eV), he kaha ake te ātete i te hihi, he kaha ake te ātete ki te pakaru o te mara hiko, me te ātete pāmahana teitei ake. Ko ngā rauemi haurua-whakakotahi o te whakatupuranga tuatoru he whānui ake te whānui o te āputa he tino pai mō te hanga i ngā taputapu hiko ātete-ihu, auau-teitei, mana-teitei me te kiato whakauru-teitei. Ko ā rātou tono i roto i ngā taputapu auau reo irirangi ngaruiti, ngā LED, ngā laser, ngā taputapu hiko me ētahi atu mara kua aro nui ki a rātou, ā, kua whakaatuhia e rātou he whānuitanga o ngā whanaketanga i roto i ngā whakawhitiwhiti waea pūkoro, ngā whatunga atamai, te kawe tereina, ngā waka hiko hou, ngā hiko kaihoko, me ngā taputapu rama ultraviolet me te kikorangi-kakariki [1].
Puna whakaahua: CASA, Zheshang Securities Research Institute
Pikitia 1 Te tauine wā me te matapae o te taputapu hiko GaN
II Te hanganga me ngā āhuatanga o te rauemi GaN
He haurua-ārai-rohe tika te GaN. Ko te whānui o te awhe-rohe o te hanganga wurtzite i te pāmahana rūma he tata ki te 3.26eV. E toru ngā hanganga tioata matua o ngā rauemi GaN, arā, ko te hanganga wurtzite, te hanganga sphalerite me te hanganga tote toka. I roto i ēnei, ko te hanganga wurtzite te hanganga tioata tino pumau. Ko te Pikitia 2 he hoahoa o te hanganga wurtzite hexagonal o GaN. Ko te hanganga wurtzite o te rauemi GaN nō roto i te hanganga hexagonal close-packed. E 12 ngā ngota o ia pūtau wae, tae atu ki te 6 ngā ngota N me te 6 ngā ngota Ga. Ka honoa e ia ngota Ga (N) he hononga ki ngā ngota N (Ga) tata e 4, ā, ka whakarārangihia i te raupapa o ABABAB… i te ahunga [0001] [2].
Pikitia 2 Te hoahoa pūtau karaihe GaN hanganga Wurtzite
III Ngā papa e whakamahia whānuitia ana mō te epitaxy GaN
Te āhua nei ko te epitaxy ōrite i runga i ngā papa GaN te kōwhiringa pai rawa atu mō te epitaxy GaN. Heoi, nā te nui o te kaha here o GaN, ina tae te pāmahana ki te pūwāhi rewa o te 2500℃, ko tōna pēhanga pirau e rite ana ko te 4.5GPa. Ina iti iho te pēhanga pirau i tēnei pēhanga, kāore a GaN e rewa engari ka pirau tika. Nā tēnei ka kore e pai ngā hangarau whakarite papa pakari pērā i te tikanga Czochralski mō te whakarite papa tioata kotahi GaN, ka uaua te hanga papatipu i ngā papa GaN, ā, he utu nui hoki. Nō reira, ko ngā papa e whakamahia whānuitia ana i roto i te tipu epitaxial GaN ko te Si, SiC, sapphire, me ētahi atu [3].
Tūtohi 3 GaN me ngā tawhā o ngā rauemi papa e whakamahia whānuitia ana
Te epitaxy GaN i runga i te hapaira
He pumau ngā āhuatanga matū o te hapaira, he iti te utu, ā, he pakari te whakamahinga i roto i te umanga whakaputa nui. Nō reira, kua noho ko tētahi o ngā rauemi papa tuatahi me te nuinga o te whakamahinga i roto i te hangarau taputapu haurua-ira. Hei tētahi o ngā papa e whakamahia whānuitia ana mō te epitaxy GaN, ko ngā raruraru matua me whakatau mō ngā papa hapaira ko:
✔ Nā te nui o te kore ōrite o te whatunga i waenga i te hapaira (Al2O3) me te GaN (tata ki te 15%), he tino teitei te kiato o te hapa i te atanga i waenga i te paparanga epitaxial me te papa. Hei whakaiti i ōna pānga kino, me tukuna te papa ki te maimoatanga matatini i mua i te tīmatanga o te tukanga epitaxy. I mua i te whakatipu epitaxy GaN ki runga i ngā papa hapaira, me horoi rawa te mata o te papa hei tango i ngā poke, ngā toenga oro, me ētahi atu, ā, hei whakaputa i ngā kaupae me ngā hanganga mata kaupae. Kātahi ka whakanitridehia te mata o te papa hei whakarerekē i ngā āhuatanga mākū o te paparanga epitaxial. Hei whakamutunga, me whakatakoto he paparanga AlN angiangi (he 10-100nm te matotoru) ki runga i te mata o te papa, ā, me whakamahana i te pāmahana iti hei whakarite mō te tipu epitaxial whakamutunga. Ahakoa rā, he teitei ake tonu te mātotoru o te nekehanga i roto i ngā kiriata epitaxial GaN i whakatipuria ki runga i ngā papa sapphire i ērā o ngā kiriata homoepitaxial (tata ki te 1010cm-2, ki te whakataurite ki te mātotoru nekehanga kore rawa i roto i ngā kiriata homoepitaxial silicon, i ngā kiriata homoepitaxial gallium arsenide rānei, i waenga i te 102 me te 104cm-2 rānei). Ka whakaitihia e te mātotoru hapa teitei ake te nekenekehanga o ngā kaikawe, ā, ka whakapotohia te roanga o te oranga o ngā kaikawe iti, ka whakaitihia hoki te kawe wera, ā, ka whakaitihia katoatia e ēnei te mahi a te taputapu [4];
✔ He nui ake te tauwehenga whānui wera o te hapaira i tō te GaN, nō reira ka puta he ahotea pēhanga biaxial i roto i te paparanga epitaxial i te wā o te tukanga whakamatao mai i te pāmahana whakatakotoranga ki te pāmahana rūma. Mō ngā kiriata epitaxial matotoru ake, ka pakaru pea te kiriata, te papa rānei i tēnei ahotea;
✔ Ki te whakaritea ki ētahi atu papa, he iti ake te kawe wera o ngā papa hapaira (tata ki te 0.25W*cm-1*K-1 i te 100℃), ā, he ngoikore te mahi marara wera;
✔ Nā te ngoikore o te kawe hiko, kāore e pai ngā papa hapaira mō te whakauru me te whakamahi tahi me ētahi atu taputapu haurua-ira.
Ahakoa he nui te mātotoru hapa o ngā paparanga epitaxial GaN i whakatipuria ki runga i ngā papa hapaira, te āhua nei kāore e tino whakaiti i te mahi optoelectronic o ngā LED kikorangi-kakariki e hangai ana ki te GaN, nō reira he papa tonu e whakamahia whānuitia ana ngā papa hapaira mō ngā LED e hangai ana ki te GaN.
I te whanaketanga o ngā tono hou o ngā taputapu GaN pēnei i ngā taiaho, i ētahi atu taputapu hiko kiato teitei rānei, kua piki haere te noho o ngā hapa o ngā papa sapphire hei herenga mō tā rātou tono. Hei tāpiri, me te whanaketanga o te hangarau tipu papa SiC, te whakahekenga utu me te pakari o te hangarau epitaxial GaN i runga i ngā papa Si, kua piki haere te rangahau mō te whakatipu i ngā papa epitaxial GaN i runga i ngā papa sapphire i te ia o te whakamatao.
Te epitaxy GaN i runga i te SiC
Ki te whakatauritea ki te hapaira, he iti ake te rerekētanga o ngā papa SiC (ngā tioata 4H- me te 6H-) ki ngā paparanga epitaxial GaN (3.1%, he rite ki ngā kiriata epitaxial [0001]), he nui ake te kawe wera (tata ki te 3.8W*cm-1*K-1), me ētahi atu. Hei tāpiri, mā te kawe hiko o ngā papa SiC ka taea te hanga hononga hiko ki te tuara o te papa, ka āwhina i te whakahaere i te hanganga o te taputapu. Nā te noho o ēnei painga kua kukume mai i te tini o ngā kairangahau ki te mahi i te epitaxy GaN i runga i ngā papa silicon carbide.
Heoi, ko te mahi tika i runga i ngā papa SiC hei karo i te tipu o ngā papa epi GaN ka pāngia hoki e ētahi ngoikoretanga, tae atu ki ēnei e whai ake nei:
✔ He nui ake te taratara o te mata o ngā papa SiC i tērā o ngā papa hapaira (taratara hapaira 0.1nm RMS, taratara SiC 1nm RMS), he pakeke rawa ngā papa SiC, ā, he ngoikore te mahi tukatuka, ā, ko tēnei taratara me te kino o te oro anō hoki tētahi o ngā pūtake o ngā hapa i roto i ngā papa epi GaN.
✔ He teitei te mātotoru o te nekehanga tīwiri o ngā papa SiC (te mātotoru o te nekehanga 103-104cm-2), ka horapa pea ngā nekehanga tīwiri ki te paparanga GaN ka whakaiti i te mahi a te taputapu;
✔ Ko te whakaritenga ngota i runga i te mata o te papa ka puta te hanganga o ngā hapa whakarārangi (BSF) i roto i te paparanga GaN. Mō te GaN epitaxial i runga i ngā papa SiC, he maha ngā raupapa whakaritenga ngota pea i runga i te papa, ka hua ake he raupapa whakarārangi ngota kāore i te ōrite o te paparanga GaN epitaxial i runga, e ngāwari ana ki te puta he hapa whakarārangi. Ko ngā hapa whakarārangi (SF) ka whakauru i ngā mara hiko kua hangaia i te taha o te tuaka-c, ka arahi ki ngā raruraru pēnei i te turuturu o ngā taputapu wehewehe kawe-roto;
✔ He iti ake te tauwehenga whānui wera o te papa SiC i tō te AlN me te GaN, ka puta te kohikohinga ahotea wera i waenga i te paparanga epitaxial me te papa i te wā o te tukanga whakamatao. I matapae a Waltereit rāua ko Brand i runga i ngā hua o ā rāua rangahau ka taea te whakaiti, te whakaoti rānei i tēnei raruraru mā te whakatipu i ngā paparanga epitaxial GaN ki runga i ngā paparanga angiangi, he angiangi, he taurite te taumahatanga o te AlN;
✔ Te raruraru o te ngoikore o te makuku o ngā ngota Ga. Ina whakatipuria ngā paparanga epitaxial GaN ki runga i te mata SiC, nā te ngoikore o te makuku i waenga i ngā ngota e rua, ka ngāwari te tipu o te moutere 3D o GaN ki runga i te mata o te papa. Ko te whakauru i tētahi paparanga ārai te otinga e whakamahia whānuitia ana hei whakapai ake i te kounga o ngā rauemi epitaxial i roto i te epitaxy GaN. Mā te whakauru i tētahi paparanga ārai AlN, AlxGa1-xN rānei ka taea te whakapai ake i te makuku o te mata SiC, ā, ka tupu te paparanga epitaxial GaN i ngā taha e rua. Hei tāpiri, ka taea hoki e ia te whakahaere i te ahotea me te ārai i ngā hapa o te papa kei toro atu ki te epitaxy GaN;
✔ Kāore anō kia pakari te hangarau whakarite o ngā papa SiC, he nui te utu o te papa, ā, he iti noa ngā kaiwhakarato me te iti o te tuku.
E whakaatu ana ngā rangahau a Torres me ētahi atu ko te whakairo i te papa SiC ki te H2 i te pāmahana teitei (1600°C) i mua i te epitaxy ka taea te whakaputa i tētahi hanganga hikoi pai ake i runga i te mata o te papa, ā, ka whiwhi i tētahi kiriata epitaxial AlN kounga teitei ake i te wā e whakatipu tika ana i runga i te mata o te papa taketake. E whakaatu ana hoki ngā rangahau a Xie me tana tīma ka taea e te whakairo i mua i te maimoatanga o te papa silicon carbide te whakapai ake i te āhua o te mata me te kounga tioata o te paparanga epitaxial GaN. I kitea e Smith me ētahi atu ko ngā nekehanga miro e ahu mai ana i te paparanga papa/paparanga ārai me ngā atanga paparanga ārai/paparanga epitaxial e pā ana ki te papatahi o te papa [5].
Ahua 4 Te āhua TEM o ngā tauira paparanga epitaxial GaN i whakatipuria ki runga i te papa 6H-SiC (0001) i raro i ngā āhuatanga maimoatanga mata rerekē (a) te horoi matū; (b) te horoi matū + te maimoatanga plasma hauwai; (c) te horoi matū + te maimoatanga plasma hauwai + te maimoatanga wera hauwai 1300℃ mō te 30 meneti
Te epitaxy GaN i runga i te Si
Ki te whakatauritea ki te silicon carbide, te hapaira me ētahi atu papa, kua pakari te tukanga whakarite papa silicon, ā, ka taea e ia te whakarato i ngā papa rahi nui kua pakari me te utu nui. I te wa ano, he pai te kawe wera me te kawe hiko, ā, kua pakari te tukanga taputapu hiko Si. Ko te āheinga ki te whakauru pai i ngā taputapu optoelectronic GaN me ngā taputapu hiko Si a muri ake nei ka tino ataahua te tipu o te epitaxy GaN i runga i te silicon.
Heoi, nā te rerekētanga nui o ngā pūmau whatunga i waenga i te papa Si me te rauemi GaN, ko te epitaxy heterogeneous o GaN i runga i te papa Si he epitaxy taupatupatu nui noa iho, ā, me aro atu hoki ki ētahi raruraru:
✔ Te raruraru pūngao o te atanga mata. Ina tupu te GaN i runga i te papa Si, ka whakanitoria tuatahitia te mata o te papa Si hei hanga i tētahi paparanga nitride silicon amorphous kāore e pai mō te whakapūnga me te tipu o te GaN kiato teitei. Hei tāpiri, ka pa tuatahitia te mata Si ki a Ga, ka waikura ai te mata o te papa Si. I ngā pāmahana teitei, ka horapa te pirau o te mata Si ki roto i te paparanga epitaxial GaN hei hanga i ngā ira silicon pango.
✔ He nui te kore ōrite o te pūmau whatunga i waenga i te GaN me te Si (~17%), ka arahi tēnei ki te hanganga o ngā nekehanga miro matotoru-teitei, ā, ka tino whakaiti i te kounga o te paparanga epitaxial;
✔ Ki te whakatauritea ki te Si, he nui ake te tauwehenga whānui wera o GaN (ko te tauwehenga whānui wera o GaN he tata ki te 5.6×10-6K-1, ko te tauwehenga whānui wera o Si he tata ki te 2.6×10-6K-1), ā, ka puta pea ngā kapiti i roto i te paparanga epitaxial o GaN i te wā e whakamataohia ana te pāmahana epitaxial ki te pāmahana rūma;
✔ Ka tauhohe a Si ki te NH3 i ngā pāmahana teitei hei hanga i te SiNx polycrystalline. Kāore e taea e AlN te hanga i tētahi karihi e hāngai ana ki runga i te SiNx polycrystalline, ka hua ake he aronga koretake o te paparanga GaN kua tipu ake i muri mai me te maha o ngā hapa, ka hua ake he kounga tioata ngoikore o te paparanga epitaxial GaN, tae atu ki te uaua ki te hanga i tētahi paparanga epitaxial GaN kotahi-crystalline [6].
Hei whakaoti rapanga o te koretake o te whatunga nui, kua ngana ngā kairangahau ki te whakauru i ngā rauemi pēnei i a AlAs, GaAs, AlN, GaN, ZnO, me SiC hei paparanga ārai i runga i ngā papa Si. Hei karo i te hanganga o te SiNx polycrystalline me te whakaiti i ōna pānga kino ki te kounga tioata o ngā rauemi GaN/AlN/Si (111), me whakauru te TMAl mō tētahi wā i mua i te tipu epitaxial o te paparanga ārai AlN hei ārai i te NH3 mai i te tauhohenga ki te mata Si e whakaatuhia ana hei hanga SiNx. Hei tāpiri, ka taea te whakamahi i ngā hangarau epitaxial pēnei i te hangarau papa tauira hei whakapai ake i te kounga o te paparanga epitaxial. Mā te whanaketanga o ēnei hangarau ka āwhina ki te aukati i te hanganga o te SiNx i te atanga epitaxial, te whakatairanga i te tipu rua-ahu o te paparanga epitaxial GaN, me te whakapai ake i te kounga tipu o te paparanga epitaxial. Hei tāpiri, ka whakaurua he paparanga ārai AlN hei utu mō te ahotea kume i puta mai i te rerekētanga o ngā tauwehenga whānui wera hei karo i ngā kapiti i roto i te paparanga epitaxial GaN i runga i te papa silicon. E whakaatu ana te rangahau a Krost he hononga pai kei waenganui i te matotoru o te paparanga ārai AlN me te whakaiti i te taumahatanga. Ina tae te matotoru o te paparanga ārai ki te 12nm, ka taea te whakatipu i tētahi paparanga epitaxial matotoru atu i te 6μm ki runga i tētahi paparanga silicon mā tētahi kaupapa tipu tika me te kore e pakaru te paparanga epitaxial.
Whai muri i ngā mahi roa a ngā kairangahau, kua tino pai ake te kounga o ngā paparanga epitaxial GaN i whakatipuria ki runga i ngā papa silicon, ā, kua tino ahu whakamua ngā taputapu pēnei i ngā transistors pānga mara, ngā pūoko ultraviolet arai Schottky, ngā LED kikorangi-kakariki me ngā taiaho ultraviolet.
Hei whakarāpopototanga, nā te mea he rerekē ngā epitaxy o ngā papa epitaxial GaN e whakamahia whānuitia ana, ka pāngia katoatia e ngā raruraru noa pēnei i te kore taurite o te whatunga me ngā rerekētanga nui o ngā tauwehenga whānui wera ki ngā taumata rerekē. Ka herea ngā papa epitaxial GaN ōrite e te pakeketanga o te hangarau, ā, kāore anō kia hangaia ngā papa i roto i te papatipu. He nui te utu whakaputa, he iti te rahi o te papa, ā, kāore i te tino pai te kounga o te papa. Ko te whanaketanga o ngā papa epitaxial GaN hou me te whakapai ake i te kounga epitaxial tetahi o ngā mea nui e aukati ana i te whanaketanga tonu o te umanga epitaxial GaN.
IV. Ngā tikanga noa mō te epitaxy GaN
MOCVD (whakatakotoranga kohu matū)
Te āhua nei ko te epitaxy ōrite i runga i ngā papa GaN te kōwhiringa pai rawa atu mō te epitaxy GaN. Heoi, nā te mea ko ngā matū matua o te whakatakotoranga kohu matū ko te trimethylgallium me te ammonia, ā, ko te hau kawe ko te hauwai, ko te pāmahana tipu MOCVD noa he 1000-1100℃, ā, ko te tere tipu o te MOCVD he torutoru maikoroni ia hāora. Ka taea e ia te whakaputa i ngā atanga pari i te taumata atomika, he tino pai mō te whakatipu heterojunctions, ngā puna quantum, ngā superlattices me ētahi atu hanganga. Ko tōna tere tipu tere, te ōritetanga pai, me te pai mō te tipu rohe nui me te maha-wāhanga ka whakamahia pinepine i roto i te whakaputa ahumahi.
MBE (epitaxy hihi ngota)
I roto i te epitaxy hihi ngota, ka whakamahia e te Ga tētahi pūtake huānga, ā, ka whiwhihia te hauota hohe mai i te hauota mā te plasma RF. Ki te whakatauritea ki te tikanga MOCVD, he iti iho te pāmahana tipu MBE i te 350-400℃. Mā te pāmahana tipu iti ka taea te karo i ētahi parahanga ka puta mai i ngā taiao pāmahana teitei. Ka whakahaerehia te pūnaha MBE i raro i te korehau tino teitei, e āhei ai ki te whakauru i ngā tikanga kimi in-situ. I taua wā anō, kāore e taea te whakarite i tōna tere tipu me tōna kaha whakaputa ki te MOCVD, ā, he nui ake te whakamahinga i roto i te rangahau pūtaiao [7].
Figure 5 (a) Eiko-MBE schematic (b) MBE main reaction chamber schematic
Tikanga HVPE (epitaxy wāhanga kohu waikura)
Ko ngā matū o mua o te tikanga epitaxy āhua hydride vapor ko GaCl3 me NH3. I whakamahia e Detchprohm me ētahi atu tēnei tikanga hei whakatipu i tētahi paparanga epitaxial GaN he rau maikoroni te matotoru ki runga i te mata o tētahi papa sapphire. I roto i tā rātou whakamātautau, i whakatipuria he paparanga ZnO i waenganui i te papa sapphire me te paparanga epitaxial hei paparanga ārai, ā, i tihorea te paparanga epitaxial mai i te mata o te papa. Ki te whakatauritea ki te MOCVD me te MBE, ko te āhuatanga matua o te tikanga HVPE ko tōna tere tipu teitei, he mea pai mō te hanga paparanga matotoru me ngā rauemi papatipu. Heoi, ina neke atu te matotoru o te paparanga epitaxial i te 20μm, ka ngāwari te paparanga epitaxial i hangaia e tēnei tikanga ki te pakaru.
I whakaurua e Akira USUI te hangarau papa tauira i runga i tēnei tikanga. I te tuatahi ka whakatipuria e rātou he paparanga epitaxial GaN angiangi he 1-1.5μm te matotoru ki runga i tētahi papa hapaira mā te whakamahi i te tikanga MOCVD. Ko te paparanga epitaxial he paparanga ārai GaN he 20nm te matotoru i whakatipuria i raro i ngā āhuatanga pāmahana iti me tētahi paparanga GaN i whakatipuria i raro i ngā āhuatanga pāmahana teitei. Kātahi, i te 430℃, ka pania he paparanga SiO2 ki runga i te mata o te paparanga epitaxial, ā, ka hangaia he rārangi matapihi ki runga i te kiriata SiO2 mā te whakaahua whakaahua. Ko te tawhiti rārangi he 7μm, ā, ko te whānui o te kopare i waenga i te 1μm ki te 4μm. Whai muri i tēnei whakapainga, ka whiwhi rātou i tētahi paparanga epitaxial GaN i runga i tētahi papa hapaira he 2-inihi te whānui, kāore he pakaru, ā, he maeneene pērā i te whakaata ahakoa ka piki te matotoru ki ngā tekau, ki ngā rau rānei o ngā maikoroni. I whakaitihia te kiato hapa mai i te 109-1010cm-2 o te tikanga HVPE tuku iho ki te 6×107cm-2 pea. I roto i te whakamātautau, i kīia anō hoki e rātou, ina neke atu te tere tipu i te 75μm/h, ka taratara te mata o te tauira [8].
Pikitia 6 Kauwhata Papaaho Whakairoiro
V. Whakarāpopototanga me te Tirohanga
I tīmata te puta o ngā rauemi GaN i te tau 2014 i te wā i toa ai te rama kikorangi LED i te Tohu Nobel mō te Ahupūngao i taua tau, ā, i uru atu ki te ao tūmatanui o ngā tono utu tere i roto i te ao hiko kaihoko. Inaa, kua puta puku mai hoki ngā tono i roto i ngā whakakaha hiko me ngā taputapu RF e whakamahia ana i roto i ngā teihana turanga 5G e kore e kitea e te nuinga o te tangata. I ngā tau tata nei, ko te whanaketanga o ngā taputapu hiko ā-aunoa GaN e matapaetia ana ka whakatuwhera i ngā wāhi tipu hou mō te mākete tono rauemi GaN.
Mā te nui o te tono a te mākete ka tino whakatairanga i te whanaketanga o ngā ahumahi me ngā hangarau e pā ana ki te GaN. I te pakeketanga me te whakapainga o te mekameka ahumahi e pā ana ki te GaN, ka pai ake, ka wikitoria rānei ngā raruraru e pā ana ki te hangarau epitaxial GaN o nāianei. I te heke mai, ka tino whakawhanakehia e te tangata ētahi atu hangarau epitaxial hou me ngā kōwhiringa papaaho pai ake. I taua wā, ka taea e te tangata te whiriwhiri i te hangarau rangahau o waho me te papaaho e tika ana mō ngā horopaki tono rerekē e ai ki ngā āhuatanga o ngā horopaki tono, ā, ka whakaputa i ngā hua ritenga tino whakataetae.
Wā tuku: Pipiri-28-2024