Amandla e-VETItreyi yeGraphite yokuGqibezela iSilicon CarbideI-Plate, kunye ne-Cover zenzelwe ukubonelela ngokusebenza okuphezulu, zibonelela ngokusebenza okuthembekileyo nokungaguquguqukiyo kusetyenziso olude, nto leyo eyenza ukuba ibe lukhetho olubalulekileyo kwizicelo zokucubungula i-wafer kwishishini le-semiconductor. Olu phawu lusebenza kakhulu.Ipleyiti yeGraphite yeSilicon Carbideinesimo sokumelana nobushushu esigqwesileyo, ukufana okuphezulu kobushushu, kunye nozinzo olubalaseleyo lweekhemikhali, ngakumbi kwiimeko zobushushu obuphezulu. Ulwakhiwo lwayo olucocekileyo kakhulu, kunye nokumelana nokukhukuliseka okuphambili, kuyenza ibaluleke kakhulu kwiindawo ezifuna amandla ezifanaAbaxhasi be-MOCVD.
Iimpawu eziphambili zeSilicon Carbide Coating Graphite Tray, Plate, kunye neCover
1. Ukumelana ne-Oxidation yoBushushu obuphezulu:Imelana namaqondo obushushu afikelela kwi-1700℃, nto leyo eyenza ukuba isebenze ngokuthembekileyo kwiimeko ezimandundu.
2. Ubunyulu obuphezulu kunye nokufana kobushushu:Ukucoceka okuphezulu rhoqo kunye nokusasazwa kobushushu ngokulinganayo kubalulekile kwizicelo zeMOCVD.
3. Ukumelana nokugqwala okungaqhelekanga:Ayinakumelana nee-asidi, ii-alkali, iityuwa, kunye nee-reagents ezahlukeneyo ze-organic, iqinisekisa uzinzo lwexesha elide kwiindawo ezahlukeneyo.
4. Ubunzima obuphezulu kunye nomphezulu oxineneyo:Inomphezulu oxineneyo onamasuntswana amancinci, nto leyo ephucula ukuqina kwayo kunye nokumelana nokuguguleka.
5. Ubomi beNkonzo eyongeziweyo:Yenzelwe ukuhlala ixesha elide, isebenza ngcono kunesiqheloii-susceptors ze-graphite ezigqunywe nge-silicon carbidekwiindawo ezinzima zokucubungula i-semiconductor.
| I-CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo | |
| 性质 / Ipropati | 典型数值 / Ixabiso eliqhelekileyo |
| 晶体结构 / Ulwakhiwo lwekristale | Isigaba se-β se-FCC多晶,主要為(111)取向 |
| 密度 / Ubuninzi | 3.21 g/cm³ |
| 硬度 / Ubulukhuni | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Ubukhulu beenkozo | 2 ~ 10μm |
| 纯度 / Ucoceko lweekhemikhali | 99.99995% |
| 热容 / Umthamo wobushushu | 640 J·kg-1·K-1 |
| 升华温度 / Ubushushu bokunyibilikisa | 2700℃ |
| 抗弯强度 / Amandla okugobeka | I-415 MPa RT 4-point |
| 杨氏模量 / Imodulus yoLutsha | I-430 Gpa 4pt bend, 1300℃ |
| 导热系数 / I-ThermalUkuqhuba | 300W·m-1·K-1 |
| 热膨胀系数 / Ukwandiswa kobushushu (CTE) | 4.5×10-6K-1 |
Ubungcali beVET Energy kwizisombululo zeGraphite nezeSilicon Carbide ezenziwe ngokwezifiso
Njengomvelisi othembekileyo, i-VET Energy igxile kwizisombululo zegrafiti ezenziwe ngokwezifiso kunye nezisombululo ze-silicon carbide coating. Sinikezela ngoluhlu lweemveliso ezenzelwe amashishini e-semiconductor kunye ne-photovoltaic, kuqukaIzixhobo zegrafiti ezigqunywe yiSiCnjengeetreyi, iipleyiti, kunye nezigqubuthelo. Uluhlu lweemveliso zethu lukwabandakanya neendlela ezahlukeneyo zokugquma, ezifanaIngubo yeSiC yeMOCVD, Ukwaleka kweTaC, ugqubuthelo lwekhabhoni olufana neglasikunye ne-pyrolytic carbon coating, ukuqinisekisa ukuba siyahlangabezana neemfuno ezahlukeneyo zamashishini asebenza ngobuchwepheshe obuphezulu.
Iqela lethu lobuchwephesha elinamava, eliquka iingcali ezivela kumaziko ophando aphambili asekhaya, libonelela ngezisombululo ezibanzi zezinto eziphathekayo kubathengi. Sihlala siphucula iinkqubo zethu eziphambili, kuquka ubuchwepheshe obukhethekileyo obunelungelo lobunikazi obuphucula ukubopha phakathi kwe-silicon carbide coating kunye ne-graphite substrate, ukunciphisa umngcipheko wokuqhekeka kunye nokwandisa ubomi bemveliso.
Izicelo kunye neenzuzo kwiMveliso yeeSemiconductor
II-Silicon Carbide Coating ye-MOCVDyenza ezi susceptors zegrafiti zisebenze kakhulu kwiindawo ezinobushushu obuphezulu nezirhabaxa. Nokuba zisetyenziswa njengee-graphite wafer carriers okanye ezinye izinto zeMOCVD, ezi susceptors ezine-silicon carbide-coated zibonisa ukuqina nokusebenza okuphezulu. Kwabo bafuna izisombululo ezithembekileyo kwiI-SiC-coated graphite susceptorImarike, itreyi yegrafiti egqunywe nge-silicon carbide, ipleyiti, kunye nesigqubuthelo se-VET Energy zibonelela ngokhetho oluqinileyo noluguquguqukayo oluhlangabezana neemfuno ezingqongqo zoshishino lwe-semiconductor.
Ngokugxila kwisayensi yezinto eziphucukileyo, i-VET Energy izibophelele ekunikezeni izisombululo zegrafiti ezigqunywe yi-SiC ezisebenza kakuhle eziqhuba ubuchule ekucutshungulweni kwee-semiconductor kwaye ziqinisekise ukusebenza okuthembekileyo kuzo zonke izicelo ezinxulumene ne-MOCVD.
I-VET Energy ngumvelisi wokwenyani weemveliso zegrafiti kunye ne-silicon carbide ezenzelwe wena kunye neengubo ezahlukeneyo ezifana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njl.njl., inokubonelela ngeendawo ezahlukeneyo ezenzelwe wena kwishishini le-semiconductor kunye ne-photovoltaic.
Iqela lethu lobuchwephesha livela kumaziko ophando aphambili asekhaya, linokubonelela ngezisombululo zezinto zobungcali ngakumbi kuwe.
Sihlala siphuhlisa iinkqubo eziphambili ukuze sinikezele ngezixhobo eziphucukileyo, kwaye sisebenze ubuchwepheshe obukhethekileyo obunelungelo lobunikazi, obunokwenza ukubopha phakathi kwengubo kunye nesiseko kube nzima kwaye kungabi lula ukwahlukana.
Wamkelekile ngobubele ukuba undwendwele umzi-mveliso wethu, makhe sixoxe ngakumbi!
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