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Gyaran Poly da SiO2:
Bayan haka, za a cire Poly da SiO2 da suka wuce kima, wato, a cire su. A wannan lokacin, ana iya amfani da su ta hanyar da ta dace.ƙeraana amfani da shi. A cikin rarrabuwar etching, akwai rarrabuwar etching na alkibla da kuma etching mara alkibla. Etching na alkibla yana nufinƙeraa wani bangare, yayin da aikin gyaran fuska ba tare da jagora ba ba shi da jagora (na faɗi da yawa ba da gangan ba. A takaice, ana cire SiO2 ne ta wani bangare ta hanyar takamaiman acid da tushe). A cikin wannan misalin, muna amfani da aikin gyaran fuska na ƙasa don cire SiO2, kuma ya zama kamar haka.
A ƙarshe, cire mai hana haske. A wannan lokacin, hanyar cire mai hana haske ba shine kunnawa ta hanyar hasken da aka ambata a sama ba, amma ta wasu hanyoyi, domin ba ma buƙatar ayyana takamaiman girma a wannan lokacin, amma don cire duk mai hana haske. A ƙarshe, ya zama kamar yadda aka nuna a cikin hoton da ke ƙasa.
Ta wannan hanyar, mun cimma manufar riƙe takamaiman wurin da Poly SiO2 yake.
Samar da tushen da magudanar ruwa:
A ƙarshe, bari mu yi la'akari da yadda tushen da magudanar ruwa ke samuwa. Kowa yana tuna cewa mun yi magana game da shi a fitowa ta ƙarshe. Tushen da magudanar ruwa an dasa su ne da nau'ikan abubuwan da suka dace. A wannan lokacin, za mu iya amfani da photoresist don buɗe yankin tushe/magudanar ruwa inda ake buƙatar dasa nau'in N. Tunda mun ɗauki NMOS ne kawai a matsayin misali, duk sassan da ke cikin hoton da ke sama za a buɗe su, kamar yadda aka nuna a cikin hoton da ke ƙasa.
Tunda ba za a iya dasa ɓangaren da mai hana haske ya rufe ba (an toshe hasken), za a dasa abubuwan nau'in N ne kawai a kan NMOS da ake buƙata. Tunda substrate ɗin da ke ƙarƙashin poly ɗin yana toshewa ta hanyar poly da SiO2, ba za a dasa shi ba, don haka ya zama kamar haka.
A wannan lokacin, an yi samfurin MOS mai sauƙi. A ka'ida, idan aka ƙara ƙarfin lantarki zuwa tushen, magudanar ruwa, poly da substrate, wannan MOS zai iya aiki, amma ba za mu iya ɗaukar bincike kawai mu ƙara ƙarfin lantarki kai tsaye zuwa tushen da magudanar ruwa ba. A wannan lokacin, ana buƙatar wayoyi na MOS, wato, akan wannan MOS, haɗa wayoyi don haɗa MOS da yawa tare. Bari mu kalli tsarin wayoyi.
Yin VIA:
Mataki na farko shine a rufe dukkan MOS da wani Layer na SiO2, kamar yadda aka nuna a cikin hoton da ke ƙasa:
Ba shakka, CVD ne ke samar da wannan SiO2, saboda yana da sauri sosai kuma yana adana lokaci. Ga yadda tsarin yake har yanzu shine sanya photoresist da fallasa shi. Bayan ƙarshen, yana kama da haka.
Sai a yi amfani da hanyar ƙera rami don ƙera rami a kan SiO2, kamar yadda aka nuna a ɓangaren launin toka a cikin hoton da ke ƙasa. Zurfin wannan ramin yana taɓa saman Si kai tsaye.
A ƙarshe, cire mai hana haske (photoresist) sannan ka ga wannan.
A wannan lokacin, abin da ya kamata a yi shi ne a cike na'urar da ke cikin wannan ramin. Dangane da menene wannan na'urar da ke da ...
Yi amfani da electrons ko ions masu ƙarfi don jefa bam a kan kayan da aka nufa, kuma kayan da aka nufa da suka karye za su faɗi ƙasa a cikin siffar atom, don haka suna samar da rufin da ke ƙasa. Kayan da aka nufa da muke gani a labarai yawanci yana nufin kayan da aka nufa a nan.
Bayan cike ramin, sai ya yi kama da haka.
Hakika, idan muka cika shi, ba zai yiwu a sarrafa kauri na murfin ya zama daidai da zurfin ramin ba, don haka za a sami ɗan ƙari, don haka muna amfani da fasahar CMP (Chemical Mechanical Polishing), wacce take da sauti mai kyau, amma a zahiri tana niƙawa, tana niƙa sassan da suka wuce gona da iri. Sakamakon haka ne.
A wannan lokacin, mun kammala samar da wani Layer na via. Tabbas, samar da via galibi yana da amfani wajen haɗa layin ƙarfe a baya.
Samar da Layer na ƙarfe:
A ƙarƙashin waɗannan sharuɗɗan da ke sama, muna amfani da PVD don cire wani Layer na ƙarfe. Wannan ƙarfe galibi ƙarfe ne da aka yi da tagulla.
Bayan an fallasa mu kuma an yi mana fenti, sai mu sami abin da muke so. Sannan mu ci gaba da tattarawa har sai mun biya buƙatunmu.
Idan muka zana tsarin, za mu gaya muku adadin layukan ƙarfe da kuma ta hanyar tsarin da aka yi amfani da su za a iya tara su a mafi yawan lokuta, wanda ke nufin adadin layukan da za a iya tara su.
A ƙarshe, mun sami wannan tsari. Babban faifan shine fil ɗin wannan guntu, kuma bayan an matse shi, sai ya zama fil ɗin da za mu iya gani (ba shakka, na zana shi ba zato ba tsammani, babu wani amfani a aikace, misali kawai).
Wannan ita ce hanyar da ake bi wajen yin guntu. A cikin wannan fitowar, mun koyi game da mafi mahimmancin fallasawa, etching, dasa ion, bututun murhu, CVD, PVD, CMP, da sauransu a cikin masana'antar semiconductor.
Lokacin Saƙo: Agusta-23-2024