Isikebhe Se-SiC Esiyindilinga Nesiphathi Sesithando Esiqondile

Incazelo emfushane:

I-VET Energy igxile ekukhiqizweni kwesikebhe se-silicon carbide wafer esihlanzekile kakhulu, esenzelwe ukuhlangabezana nezidingo eziqinile zemboni ye-semiconductor. Sisebenzisa ubuchwepheshe obuthuthukisiwe bokuthulula, imikhiqizo yethu ibonisa ukuzinza kokushisa okumangalisayo, ukumelana nokugqwala, kanye namandla omshini. Lezi zakhiwo ziqinisekisa ukungcoliswa okuncane kwezinhlayiya kanye nokuphila isikhathi eside kwenkonzo, okwenza zibe zilungele izinqubo zokushisa okuphezulu njengokusabalalisa, i-CVD, kanye ne-oxidation. Sizibophezele ekhwalithini nasekusunguleni izinto ezintsha, sinikeza izixazululo ezinokwethenjelwa ezithuthukisa ukusebenza kahle kokucubungula i-wafer kanye nesivuno kumakhasimende ethu omhlaba jikelele.


  • Igama:Isikebhe Esiqinile Se-SiC Esiyindilinga
  • Izinto:I-SiC Ephinde Yasetshenziswa Ehlanzekile Kakhulu
  • Isikhathi sokuthumela:Kuye Ngobuningi
  • I-OEM, i-ODM:Usekelo
  • Isitifiketi:IS09001:2015
  • I-MOQ:1pcs
  • Isampula:Kuyatholakala
  • Imininingwane Yomkhiqizo

    Amathegi Omkhiqizo

    Isikebhe Se-SiC Esiyindilinga Nesiphathi Sesithando Esiqondile

    Isikebhe se-silicon carbide esithambileikakhulukazi ukusekela nokuthutha ama-wafer ezinqubweni zokushisa eziphakeme zama-wafer e-semiconductor njengokusabalalisa, ukujiya, kanye nokufaka i-annealing. Ukusebenza kwawo kuthinta ngqo ikhwalithi yomkhiqizo we-wafer kanye nokusebenza kahle kokukhiqiza.

    Isikebhe se-SiC esithambile

    Imiklamo yesakhiwo sesikebhe se-silicon carbide wafer:
    Ngokuvamile inesakhiwo esinezimbobo noma esifana nekamu;
    Izikhala eziningi zokubeka nokuhlukanisa ama-wafer;
    Yakhelwe ukucabangela ukusatshalaliswa kokugeleza kwegesi, ukuqinisekisa ukushisa nokupholisa okufanayo;
    Ifanele isithando somlilo esiqondile nesithando somlilo esivundlile;
    Yakhelwe osayizi abahlukene njengama-wafer angu-3 intshi, 4 intshi, 6 intshi, 8 intshi, 12 intshi.

    Izikebhe ze-wafer ze-silicon carbide ze-VET Energy zenziwe kusetshenziswa ubuchwepheshe obuthuthukisiwe bokuthulula futhi zenzelwe ngqo ukuhlangabezana nezidingo eziqinile zokuthwala izinqubo zokukhiqiza i-semiconductor ethuthukisiwe. Izinzuzo zazo zobuchwepheshe eziphakeme zibonakala kakhulu kulezi zici ezilandelayo:

    1. Ukuhlanzeka Okuphelele kanye Nokungcola Okuphansi Kakhulu
    Sisebenzisa izinto zokusetshenziswa ezihlanzekile kakhulu, siqinisekisa ukuthi umkhiqizo unokuqukethwe kwe-ion yensimbi okuphansi kakhulu (ngaphansi kwe-1 ppm ye-Na, K, Fe, kanye ne-Ca). Imvula encane emazingeni okushisa aphezulu ivimbela ngempumelelo ukungcoliswa kwe-wafer, iqinisekisa ukukhiqizwa okuphezulu kwe-chip kanye nokuthembeka, okwenza kube ukukhetha okuhle kulabo abalwela ukuphelela kwenqubo.
    2. Ukusebenza Okuhle Kakhulu Kokushisa Nokuzinza
    Isikebhe sethu se-SiC wafer sinokudluliswa kokushisa okuphezulu kakhulu kanye nokumelana okuhle kakhulu nokushaqeka kokushisa. Singakwazi ukumelana nokushintshashintsha kwezinga lokushisa okusheshayo kusukela ekushiseni kwegumbi kuya ku-1600℃ ngaphandle kokuqhekeka noma ukuguquka, okuqinisekisa ukuphindaphindwa kwenqubo kanye nokungaguquguquki, okunciphisa kakhulu isikhathi sokungasebenzi esingahleliwe ngenxa yezinkinga zomthwali.
    3. Ukumelana Okungavamile Kokugqwala kanye Nokuqina Kwemishini
    Ukuqina okuphezulu kanye nokumelana okunamandla kokuguguleka, kanye nokumelana okumangalisayo ezindaweni ezine-acidic kanye ne-alkaline, kudlula kakhulu i-quartz kanye ne-graphite. Amandla ayo amangalisayo okusebenza avimbela ngempumelelo ukukhiqizwa kwezinhlayiya ngesikhathi sokuphathwa okuzenzakalelayo okuvamile, okwandisa kakhulu impilo yayo yesevisi futhi kunciphisa izindleko zokusebenza zizonke.
    4. Umklamo Oqondile Nokuhambisana Okuhle Kakhulu
    Sisebenzisa ubuchwepheshe obuthuthukisiwe bokubumba nokucubungula, siqinisekisa ukuthi isikebhe ngasinye se-wafer sinezilinganiso eziqondile zejometri kanye nokunemba okuphezulu kobuso, siqinisekisa izikhala ezifanayo ze-wafer kanye nokuhamba komoya okuzinzile.

    重结晶碳化硅物理特性

    Izakhiwo zomzimba ze-Recrystallised Silicon Carbide

    性质 / Impahla

    典型数值 / Inani Elijwayelekile

    使用温度/ Izinga lokushisa lokusebenza (°C)

    1600°C (ene-oxygen), 1700°C (indawo enciphisayo)

    I-SiC含量/ Okuqukethwe kwe-SiC

    > 99.96%

    自由Si含量/ Okuqukethwe kwe-Si kwamahhala

    < 0.1%

    体积密度/Ubuningi obukhulu

    2.60-2.70 g/cm3

    气孔率/ Ukuvuleka okubonakalayo

    < 16%

    抗压强度/ Amandla okucindezela

    > 600I-MPa

    常温抗弯强度/Amandla okugoba abandayo

    80-90 MPa (20°C)

    高温抗弯强度Amandla okugoba ashisayo

    90-100 MPa (1400°C)

    热膨胀系数/ Ukwandiswa kokushisa @1500°C

    4.70 10-6/°C

    导热系数/Ukushisa kwe-conductivity @1200°C

    23Ububanzi/m•K

    杨氏模量/ Imodulus enwebekayo

    240 GPa

    抗热震性/ Ukumelana nokushaqeka kokushisa

    Kuhle kakhulu

    Isikebhe se-Silicon Carbide Wafer

    I-VET Energy ingumkhiqizi ochwepheshe ogxile ku-R&D kanye nokukhiqizwa kwezinto ezisezingeni eliphezulu ezifana ne-graphite, i-silicon carbide, i-quartz, kanye nokwelashwa kwezinto ezifana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njll. Imikhiqizo isetshenziswa kabanzi ku-photovoltaic, i-semiconductor, amandla amasha, i-metallurgy, njll.

    Ithimba lethu lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, lingakunikeza izixazululo zezinto zobuchwephesha ezengeziwe.

    Izinzuzo ze-VET Energy zifaka:
    • Ilebhu yakho yefektri kanye neyobungcweti;
    • Amazinga okuhlanzeka okuhamba phambili embonini kanye nekhwalithi;
    • Intengo yokuncintisana kanye nesikhathi sokulethwa okusheshayo;
    • Ubambiswano oluningi lwemboni emhlabeni jikelele;

    Siyakwamukela ukuthi uvakashele ifektri yethu kanye nelebhu nganoma yisiphi isikhathi!

     amakhasimende ethu

    izithombe zethu zasefektri


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