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Uphononongo lwamanani lokulinganisa kwisiphumo segraphite eneporous ekukhuleni kwecrystal carbide crystal
ngu admin on 24-06-18
Inkqubo esisiseko yokukhula kwe-crystal ye-SiC ihlukaniswe ibe yi-sublimation kunye nokubola kwezinto ezibonakalayo kwiqondo lokushisa eliphezulu, ukuthuthwa kwezinto zesigaba segesi phantsi kwesenzo se-gradient yeqondo lokushisa, kunye nokukhula kwakhona kwezinto zesigaba segesi kwi-crystal yembewu. Ngokusekelwe koku, i...
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Iintlobo zeGrafite ekhethekileyo
ngu admin nge 24-06-17
Igraphite ekhethekileyo bubunyulu obuphezulu, ingxinano ephezulu kunye namandla aphezulu egraphite kwaye inokumelana nokugqwesa okugqwesileyo, uzinzo oluphezulu lobushushu kunye nokuhamba kombane okukhulu. Yenziwe ngegraphite yendalo okanye eyenziweyo emva konyango lobushushu obuphezulu kunye noxinzelelo oluphezulu...
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Uhlalutyo lwezixhobo zokubeka ifilimu ezibhityileyo - imigaqo kunye nokusetyenziswa kwezixhobo ze-PECVD/LPCVD/ALD
ngu admin on 24-06-12
Ukubekwa kwefilim ebhityileyo kukugquma umaleko wefilimu kwizinto ezingundoqo ze-semiconductor. Le filimu inokwenziwa ngezinto ezahlukeneyo, ezifana ne-silicon dioxide, i-semiconductor polysilicon, i-metal copper, njl.
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Izinto ezibalulekileyo ezibonisa umgangatho wokukhula kwe-silicon ye-monocrystalline - intsimi ye-thermal
ngu admin on 24-06-12
Inkqubo yokukhula ye-silicon ye-monocrystalline iqhutywe ngokupheleleyo kwintsimi ye-thermal. Intsimi efanelekileyo ye-thermal inceda ekuphuculeni umgangatho weekristali kwaye inokusebenza okuphezulu kwe-crystallization. Uyilo lommandla we-thermal lumisela ubukhulu becala utshintsho kwiqondo lobushushu...
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Bubuphi ubunzima bobugcisa be-silicon carbide crystal ukukhula eziko?
ngu admin on 24-06-07
Iziko lokukhula kwekristale sesona sixhobo siphambili sokukhula kwekristale ye-silicon carbide. Iyafana neziko lokukhula kwekristale ye-silicon yebakala. Isakhiwo sesithando somlilo asinzima kakhulu. Ikakhulu yenziwe ngumzimba wesithando somlilo, inkqubo yokufudumeza, indlela yokuhambisa ikhoyili...
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Ziziphi iziphene ze-silicon carbide epitaxial layer
ngu admin on 24-06-05
Itekhnoloji engundoqo yokukhula kwezixhobo ze-SiC epitaxial kuqala itekhnoloji yokulawula isiphene, ngakumbi kwitekhnoloji yokulawula isiphene ethanda ukusilela kwesixhobo okanye ukuthotywa kokuthembeka. Uphononongo lwendlela yeziphene zesubstrate ezidlulela kwi-epi...
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Ukukhula okuziinkozo okune-oxidized kunye neteknoloji yokukhula kwe-epitaxial-Ⅱ
ngu admin nge 24-05-30
2. Ukukhula kwefilimu encinci ye-Epitaxial I-substrate inikeza umaleko wenkxaso yomzimba okanye i-conductive layer yezixhobo zamandla ze-Ga2O3. Uluhlu olulandelayo olubalulekileyo luluhlu lwesiteshi okanye i-epitaxial layer esetyenziselwa ukuxhathisa i-voltage kunye nokuthuthwa komthwali. Ukuze kwandiswe i-voltage yokuqhawula kunye nokunciphisa i-con...
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I-Gallium oxide ikristale enye kunye neteknoloji yokukhula kwe-epitaxial
ngu admin nge 24-05-30
I-Wide bandgap (WBG) semiconductors emelwe yi-silicon carbide (SiC) kunye ne-gallium nitride (GaN) ifumene ingqwalasela ebanzi. Abantu banolindelo oluphezulu kwizicelo ezilindelekileyo ze-silicon carbide kwizithuthi zombane kunye neegridi zamandla, kunye nethemba lesicelo se-gallium...
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Yeyiphi imiqobo yobugcisa kwi-silicon carbide?Ⅱ
ngu admin on 24-05-22
Ubunzima bezobuchwepheshe ekuveliseni ubunzima obuzinzileyo obuphezulu be-silicon carbide wafers kunye nokusebenza okuzinzile kubandakanya: 1) Ekubeni i-crystals kufuneka ikhule kwindawo evaliweyo yokushisa ngaphezu kwe-2000 ° C, iimfuno zokulawula ubushushu ziphezulu kakhulu; 2) Kuba i-silicon carbide ine ...
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