Izindaba

Iyini indlela yokuhlela ye-CMP?
ngumlawuli ngomhlaka-24-11-25
I-Dual-Damascene ubuchwepheshe benqubo obusetshenziswa ukukhiqiza ukuxhumana kwensimbi kumasekethe ahlanganisiwe. Kuyintuthuko eyengeziwe yenqubo yaseDamasko. Ngokwakha imigodi nemigodi ngesikhathi esifanayo ngesinyathelo senqubo efanayo bese uyigcwalisa ngensimbi, ukukhiqizwa okuhlanganisiwe kwe-m...
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I-Graphite ene-TaC coating
ngumlawuli ngomhlaka-24-11-21
I. Ukuhlolwa kwepharamitha yenqubo 1. Uhlelo lwe-TaCl5-C3H6-H2-Ar 2. Izinga lokushisa lokufaka: Ngokwefomula ye-thermodynamic, kubalwa ukuthi lapho izinga lokushisa lingaphezu kuka-1273K, amandla amahhala e-Gibbs okusabela aphansi kakhulu futhi ukusabela kuphelele. I-rea...
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Inqubo yokukhula kwekristalu ye-silicon carbide kanye nobuchwepheshe bemishini
ngumlawuli ngomhlaka-24-11-21
1. Umzila wobuchwepheshe bokukhula kwekristalu ye-SiC i-PVT (indlela yokunciphisa ukushisa), i-HTCVD (i-CVD yokushisa okuphezulu), i-LPE (indlela yesigaba soketshezi) yizindlela ezintathu ezivamile zokukhula kwekristalu ye-SiC; Indlela eyaziwa kakhulu embonini yindlela ye-PVT, futhi amakristalu angaphezu kwama-95% e-SiC akhuliswa yi-PVT ...
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Ukulungiselela Nokuthuthukiswa Kokusebenza Kwezinto Ezihlanganisiwe Ze-Silicon Carbon Ezinezimbobo
ngumlawuli ngomhlaka-24-11-13
Amabhethri e-lithium-ion athuthukiswa kakhulu ngokuya ngamandla aphezulu. Ezingeni lokushisa legumbi, i-electrode engemihle esekelwe ku-silicon ixuba i-lithium ukuze ikhiqize umkhiqizo we-lithium-rich Li3.75Si phase, onekhono elithile elingafika ku-3572 mAh/g, eliphakeme kakhulu kune-theory...
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Ukushiswa Kwe-Thermal kwe-Single Crystal Silicon
ngumlawuli ngomhlaka-24-11-13
Ukwakheka kwe-silicon dioxide ebusweni be-silicon kubizwa ngokuthi i-oxidation, futhi ukudalwa kwe-silicon dioxide eqinile futhi enamathela ngokuqinile kwaholela ekuzalweni kobuchwepheshe be-silicon integrated circuit planar. Nakuba kunezindlela eziningi zokutshala i-silicon dioxide ngqo ebusweni be-silico...
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Ukucutshungulwa kwe-UV kokupakisha kwe-Fan-Out Wafer-Level
ngumlawuli ngomhlaka-24-11-05
Ukupakisha izinga le-wafer eliphuma kufeni (i-FOWLP) kuyindlela engabizi kakhulu embonini ye-semiconductor. Kodwa imiphumela emibi ejwayelekile yale nqubo ukugoba kanye nokususwa kwe-chip. Naphezu kokuthuthuka okuqhubekayo kobuchwepheshe bezinga le-wafer kanye nezinga lephaneli, lezi zinkinga ezihlobene nokubumba zisasebenza...
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I-silicon carbide ceramics: isiphetho sezingxenye ze-photovoltaic quartz
ngumlawuli ngomhlaka-24-11-05
Njengoba izwe lanamuhla liqhubeka nokuthuthuka, amandla angavuseleleki aya ngokuya ephela, futhi umphakathi wesintu uphuthuma kakhulu ukusebenzisa amandla avuselelekayo amelwe “umoya, ukukhanya, amanzi kanye nenyukliya”. Uma kuqhathaniswa neminye imithombo yamandla avuselelekayo, abantu...
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Inqubo yokulungiselela i-silicon carbide ceramic yokusila nokusabela ngaphandle kokucindezela
ngumlawuli ngomhlaka-24-10-29
Ukusika i-reaction Inqubo yokukhiqizwa kwe-ceramic ye-silicon carbide e-reaction sintering ifaka phakathi ukuhlanganiswa kwe-ceramic, ukuhlanganiswa kwe-agent yokungena kwe-sintering flux, ukulungiswa komkhiqizo we-ceramic o-reaction sintering, ukulungiswa kwe-ceramic yokhuni lwe-silicon carbide nezinye izinyathelo.
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I-Silicon carbide ceramics: izingxenye zokunemba ezidingekayo ezinqubweni ze-semiconductor
ngumlawuli ngomhlaka-24-10-29
Ubuchwepheshe be-Photolithography bugxile kakhulu ekusebenziseni izinhlelo zokukhanya ukuze kuvezwe amaphethini wesekethe kuma-silicon wafers. Ukunemba kwale nqubo kuthinta ngqo ukusebenza kanye nokukhiqiza kwamasekethe ahlanganisiwe. Njengenye yemishini ephezulu yokukhiqiza ama-chip, umshini we-lithography uqukethe...
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