An shirya murfin da ke jure wa SiC oxidation - an shirya shi akan saman graphite ta hanyar tsarin CVD

Ana iya shirya murfin SiC ta hanyar amfani da sinadarin tururi (CVD), canjin tsari, fesawa a cikin plasma, da sauransu. Rufin da CHEMICAL tururi ya shirya iri ɗaya ne kuma mai ƙanƙanta, kuma yana da kyakkyawan tsari. Ta amfani da methyl trichlosilane. (CHZSiCl3, MTS) a matsayin tushen silicon, rufin SiC da aka shirya ta hanyar CVD hanya ce mai kyau don amfani da wannan murfin.
Rufin SiC da graphite suna da kyakkyawan jituwa da sinadarai, bambancin ma'aunin faɗaɗa zafi a tsakaninsu ƙarami ne, amfani da murfin SiC na iya inganta juriyar lalacewa da juriyar iskar shaka na kayan graphite yadda ya kamata. Daga cikinsu, rabon stoichiometric, zafin amsawa, iskar gas mai narkewa, iskar ƙazanta da sauran yanayi suna da babban tasiri akan amsawar.