Ukufakwa kwe-SiC kungalungiswa nge-chemical vapor deposition (CVD), ukuguqulwa kwe-precursor, ukufutha nge-plasma, njll. Ukufakwa kwe-CHEMICAL vapor deposition kuyafana futhi kuncane, futhi kunekhono elihle lokuklama. Kusetshenziswa i-methyl trichlosilane. (CHzSiCl3, MTS) njengomthombo we-silicon, ukufakwa kwe-SiC okulungiselelwe ngendlela ye-CVD kuyindlela evuthiwe yokusebenzisa lesi simbozo.
I-SiC coating kanye ne-graphite zinokuhambisana okuhle kwamakhemikhali, umehluko we-thermal expansion coefficient phakathi kwazo mncane, ukusebenzisa i-SiC coating kungathuthukisa ngempumelelo ukumelana nokuguguleka kanye nokumelana ne-oxidation kwezinto ze-graphite. Phakathi kwazo, isilinganiso se-stoichiometric, izinga lokushisa lokusabela, igesi yokuxuba, igesi yokungcola nezinye izimo zinethonya elikhulu ekusabeleni.
Isikhathi sokuthunyelwe: Septhemba 14-2022