Ingubo yeSiC ingalungiswa nge-chemical vapor deposition (CVD), i-precursor transformation, i-plasma spray, njl. Ingubo elungiselelwe yi-CHEMICAL vapor deposition iyafana kwaye incinci, kwaye inoyilo oluhle. Ukusebenzisa i-methyl triklosilane. (CHzSiCl3, MTS) njengomthombo we-silicon, i-SiC coating elungiselelwe nge-CVD method yindlela evuthiweyo yokusebenzisa le ngubo.
I-SiC coating kunye ne-graphite zihambelana kakuhle neekhemikhali, umahluko phakathi kwe-thermal expansion coefficient phakathi kwazo mncinci, ukusebenzisa i-SiC coating kunokuphucula ngempumelelo ukumelana nokuguguleka kunye nokumelana ne-oxidation kwezinto ze-graphite. Phakathi kwazo, umlinganiselo we-stoichiometric, ubushushu bokusabela, igesi yokunyibilikisa, igesi yokungcola kunye nezinye iimeko zinempembelelo enkulu kwi-reaction.
Ixesha lokuthumela: Septemba-14-2022