Kuputira SiC kunogona kugadzirwa ne chemical vapor deposition (CVD), precursor transformation, plasma spraying, nezvimwewo. Kuputira kwakagadzirwa ne CHEMICAL vapor deposition kwakafanana uye kwakabatana, uye kune dhizaini yakanaka. Uchishandisa methyl trichlosilane. (CHzSiCl3, MTS) se silicon source, SiC coating yakagadzirwa ne CVD method inzira yakakura yekushandiswa kweiyi coating.
Kuputira kweSiC negrafiti zvine makemikari anoenderana zvakanaka, musiyano wekuwedzera kwekushisa pakati pazvo mudiki, kushandisa SiC coating kunogona kuvandudza zvinobudirira kuramba kwegrafiti uye kuramba kweoxidation. Pakati pazvo, chiyero chestoichiometric, tembiricha ye reaction, gasi re dilution, gasi rekusachena nezvimwe zvinhu zvine simba guru pakuita kwe reaction.
Nguva yekutumira: Gunyana-14-2022