Oxidation SiC - dahaadh u adkaysta ayaa lagu diyaariyey dusha sare ee graphite iyadoo la adeegsanayo habka CVD

Dahaarka SiC waxaa lagu diyaarin karaa kaydinta uumiga kiimikada (CVD), isbeddelka horudhaca ah, buufinta balaasmaha, iwm. Dahaarka ay diyaarisay kaydinta uumiga KIIMIKADA waa mid isku mid ah oo is haysta, wuxuuna leeyahay qaabeyn wanaagsan. Iyada oo la adeegsanayo methyl trichlosilane. (CHZSiCl3, MTS) oo ah isha silikoon, dahaarka SiC ee lagu diyaariyey habka CVD waa hab bisil oo loogu talagalay isticmaalka dahaarkan.
Dahaarka SiC iyo graphite waxay leeyihiin iswaafajin kiimiko oo wanaagsan, farqiga u dhexeeya isku-dhafka ballaarinta kulaylka waa yar yahay, isticmaalka dahaarka SiC wuxuu si wax ku ool ah u hagaajin karaa iska caabbinta xirashada iyo iska caabbinta oksaydhka ee maaddada graphite. Kuwaas waxaa ka mid ah, saamiga stoichiometric, heerkulka falcelinta, gaaska milmida, gaaska wasakhaysan iyo xaalado kale ayaa saameyn weyn ku leh falcelinta.

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Waqtiga boostada: Sebtembar-14-2022
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