Gusiga SiC bishobora gutegurwa hakoreshejwe uburyo bwa chemical vapor deposition (CVD), precursor transformation, plasma spraying, nibindi. Gusiga chemical vapor deposition ni kimwe kandi ni nto, kandi bifite imiterere myiza. Hakoreshejwe methyl trichlosilane. (CHzSiCl3, MTS) nk'isoko ya silicon, SiC yateguwe hakoreshejwe uburyo bwa CVD ni uburyo bugezweho bwo gukoresha ubu buryo.
Igishishwa cya SiC na grafiti bifite imikorere myiza ya shimi, itandukaniro ry’ubushyuhe hagati yabyo ni rito, gukoresha igishishwa cya SiC bishobora kunoza neza uburyo ibikoresho bya grafiti biramba kandi bikanarwanya ogisijeni. Muri byo, igipimo cya stoichiometric, ubushyuhe bw’impinduka, gaze yo gushonga, gaze y’imyanda n’ibindi bintu bigira ingaruka zikomeye ku buryo ibintu biramba.
Igihe cyo kohereza ubutumwa: 14 Nzeri 2022