Waʻa/Hale Kiaʻi Wafer SiC

Wehewehe Pōkole:

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Nā kikoʻī huahana

Nā Lepili Huahana

HuahanaDwehewehe

Hoʻohana nui ʻia ka Silicon carbide Wafer Boat ma ke ʻano he mea paʻa wafer i ke kaʻina hana hoʻolaha wela kiʻekiʻe.

Nā Pōmaikaʻi:

Ke kū'ē wela kiʻekiʻe:hoʻohana maʻamau ma 1800 ℃

Ka hoʻokele wela kiʻekiʻe:like me ka mea graphite

Paʻakikī kiʻekiʻe:ʻo ka paʻakikī ka lua wale nō ma hope o ke daimana, boron nitride

Ke kū'ē ʻana i ka palaho:ʻAʻohe pala o ka waikawa ikaika a me ka alkali iā ia, ʻoi aku ka maikaʻi o ke kūpaʻa ʻana i ka pala ma mua o ka tungsten carbide a me ka alumina

Māmā ke kaumaha:haʻahaʻa haʻahaʻa, kokoke i ka alumini

ʻAʻohe hoʻololi ʻana: ka helu haʻahaʻa o ka hoʻonui wela

Ke kū'ē ʻana i ka haʻalulu wela:hiki iā ia ke kū i nā loli wela ʻoi, kū i ka haʻalulu wela, a he hana paʻa

Nā Waiwai Kino o SiC

Waiwai	Waiwai	ʻAno hana
Ka nui o ka paʻa	3.21 g/cc	Ka lana o ka poho a me ka nui
Wela kikoʻī	0.66 J/g °K	ʻĀlohilohi laser pulsed
Ikaika kūlou	450 MPa560 MPa	Piʻo kiko 4, piʻo kiko RT4, 1300°
Paʻakikī o ka haki	2.94 MPa m1/2	Ka hoʻokomo liʻiliʻi ʻana
Paʻakikī	2800	ʻO Vicker's, ukana 500g
Modulus ElasticʻO ka Modulus o Young	450 GPa430 GPa	4 pt kūlou, RT4 pt kūlou, 1300 °C
Ka nui o ka palaoa	2 – 10 µm	SEM