HuaDwhakaahuatanga
E whakamahia whānuitia ana te Waka Angiangi Silicon carbide hei pupuri wafer i roto i te tukanga tohatoha pāmahana teitei.
Ngā Painga:
Ātete pāmahana teitei:te whakamahinga noa i te 1800 ℃
Te kawe wera teitei:he rite ki te rauemi karāhe
Te pakeketanga teitei:te pakeketanga tuarua anake ki te taimana, te boron nitride
Ātete ki te waikura:Kāore he waikura o te waikawa kaha me te kawakore, he pai ake te ātete ki te waikura i te tungsten carbide me te alumina
Mama te taumaha:iti te mātotoru, tata ki te konumohe
Kāore he whakarerekētanga: te iti o te tauwehenga o te whakawhānui wera
Ātete ru wera:ka taea e ia te tu atu i ngā huringa pāmahana ohorere, te ātete ki te ru wera, ā, he pumau te mahi
Ngā Āhuatanga Ā-tinana o te SiC
| Taonga | Uara | Tikanga |
| Kiato | 3.21 karamu/cc | Totohu-mānu me te rahinga |
| Te wera motuhake | 0.66 J/g °K | Te mura o te laser |
| Kaha piko | 450 MPa560 MPa | Piko pūwāhi 4, piko pūwāhi RT4, 1300° |
| Te pakari o te whati | 2.94 MPa m1/2 | Te whakapiko iti |
| Te pakeketanga | 2800 | Vicker's, 500g te taumaha |
| Te Tauwehenga ĀteteTe Tauwehenga a Young | 450 GPa430 GPa | Piko 4 pt, piko RT4 pt, 1300 °C |
| Rahi o te witi | 2 – 10 µm | SEM |
Ngā Āhuatanga Wera o te SiC
| Te Arahi Wera | 250 W/m °K | Tikanga uira taiaho, RT |
| Te Whakawhanuitanga Wera (CTE) | 4.5 x 10-6 °K | Te pāmahana rūma ki te 950 °C, te ine whakawhanui silica |
