Sekepe/Tora ea SiC Wafer

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Sekepe sa Wafer sa Silicon carbide se sebelisoa haholo e le sets'oants'o sa wafer ts'ebetsong ea ho hasana ha mocheso o phahameng.

Melemo:

Khanyetso e phahameng ea mocheso:tšebeliso e tloaelehileng ho 1800 ℃

Ho khanna ha mocheso o phahameng:e lekanang le thepa ea graphite

Ho thatafala ho hoholo:boima bo latela taemane feela, boron nitride

Khanyetso ea ts'enyeho:asiti e matla le alkali ha li na mafome ho eona, khanyetso ea mafome e betere ho feta tungsten carbide le alumina

Boima bo bobebe:boima bo tlase, haufi le aluminium

Ha ho phetoho: coefficient e tlase ea katoloso ea mocheso

Khanyetso ea ho tšoha ha mocheso:e ka mamella liphetoho tse matla tsa mocheso, ea hanela ho thothomela ha mocheso, 'me e na le ts'ebetso e tsitsitseng

Matlotlo a 'Mele a SiC

Thepa	Boleng	Mokhoa
Botenya	3.21 g/cc	Sinki-float le boholo
Mocheso o itseng	0.66 J/g °K	Leseli la laser le putlamang
Matla a ho tenyetseha	450 MPa560 MPa	Kobeho ea lintlha tse 4, kobeho ea lintlha tse RT4, 1300°
Ho tiea ha ho robeha	2.94 MPa m1/2	Ho kobeha ha liphio tse nyenyane
Bothata	2800	Vicker's, mojaro oa 500g
Modulus ea Elastic ea Young	450 GPa430 GPa	Kobeho ea 4 pt, kobeho ea RT4 pt, 1300 °C
Boholo ba lijo-thollo	2 – 10 µm	SEM

Thepa ea Thermal ea SiC

Ho khanna ha mocheso	250 W/m °K	Mokhoa oa ho bonesa ka laser, RT
Katoloso ea Thermal (CTE)	4.5 x 10-6 °K	Mocheso oa kamore ho fihlela ho 950 °C, silica dilatometer