Ụgbọ mmiri SiC Wafer/Tower

Nkọwa ngwaahịa

NgwaahịaDescription

A na-eji Silicon carbide Wafer Boat eme ihe n'ọtụtụ ebe dị ka onye na-ejide wafer na usoro mgbasa ozi dị elu.

Uru:

Nguzogide okpomọkụ dị elu:eji eme ihe na 1800 ℃

High thermal conductivity:dakọtara na ihe graphite

Isi ike dị elu:ike siri ike nke abụọ na-esote diamond, boron nitride

Nguzogide corrosion:acid siri ike na alkali enweghị corrosion na ya, nguzogide corrosion dị mma karịa tungsten carbide na alumina.

Ibu arọ:obere njupụta, nso aluminom

Enweghị nrụrụ: ọnụ ọgụgụ dị ala nke mgbasawanye thermal

Mgbochi ujo okpomọkụ:ọ nwere ike iguzogide mgbanwe okpomọkụ dị nkọ, na-eguzogide ujo okpomọkụ, ma nwee arụmọrụ kwụsiri ike

Njirimara anụ ahụ SiC

Ngwongwo	Uru	Usoro
Njupụta	3.21 g/cc	Sink-ese n'elu na nha
Okpomọkụ akọwapụtara	0.66 J/g °K	Igwe ọkụ laser gbara agba
Ike mgbanwe	450 MPa 560 MPa	Ehulata isi 4, isi ihe RT4, 1300°
Mgbaji siri ike	2.94 MPa m1/2	Microindentation
Isi ike	2800	Vicker, ibu 500 g
Modul ModulusYoung's Elastic	450 GPa430	4 pt gbagọọ, RT4 pt gbagọọ, 1300 °C
Nha ọka	2-10 µm	SEM

Njirimara Thermal nke SiC

Nrụpụta okpomọkụ	250 W/m °K	Laser flash usoro, RT
Mgbasawanye okpomọkụ (CTE)	4.5 x 10-6 °K	Okpomọkụ ụlọ ruo 950 Celsius C, silica dilatometer