Ụgbọ mmiri/Ụlọ Elu SiC Wafer

Nkọwa Ngwaahịa

NgwaahịaDnkọwa

A na-eji ụgbọ mmiri silicon carbide Wafer eme ihe nke ukwuu dị ka ihe na-ejide wafer n'usoro mgbasa okpomọkụ dị elu.

Uru:

Oke okpomọkụ na-eguzogide:ojiji nkịtị na 1800 ℃

Oke okpomọkụ na-eduzi nke ọma:ihe yiri ihe e ji graphite mee

Ike siri ike dị elu:ike siri ike nke abụọ karịa dayamọnd, boron nitride

Mgbochi nrụrụ aka:Asị siri ike na alkali enweghị mmebi na ya, nguzogide nchara ka mma karịa tungsten carbide na alumina

Ibu dị mfe:obere njupụta, dị nso na aluminom

Enweghị mgbanwe: obere ọnụọgụ nke mgbasawanye okpomọkụ

Nguzogide ujo okpomọkụ:ọ nwere ike iguzogide mgbanwe okpomọkụ dị nkọ, iguzogide ujo okpomọkụ, ma nwee arụmọrụ kwụsiri ike

Njirimara Anụ Ahụ nke SiC

Akụ na ụba	Uru	Ụzọ
Njupụta	3.21 g/cc	Sink-ese n'elu mmiri na nha
Okpomọkụ kpọmkwem	0.66 J/g °K	Flash laser a na-emegharị emegharị
Ike flexural	450 MPa560 MPa	Ngbagọ isi anọ, Ngbagọ isi RT4, 1300°
Ike nke mgbawa	2.94 MPa m1/2	Ndepụ obere
Ike siri ike	2800	Vicker's, ibu 500g
Modulus Elastic nke Young	450 GPa430 GPa	Ngbagọ 4pt, Ngbagọ 4pt RT, 1300 °C
Nha ọka	2 – 10 µm	SEM

Njirimara okpomọkụ nke SiC

Ọgbakọ okpomọkụ	250 W/m °K	Usoro ọkụ laser, RT
Mgbasawanye Okpomọkụ (CTE)	4.5 x 10-6 °K	Okpomọkụ ụlọ ruo 950 °C, silica dilatometer