Isikhephe/iNqaba yeSiC Wafer

Iinkcukacha zeMveliso

ImvelisoDinkcazo

I-Silicon carbide Wafer Boat isetyenziswa kakhulu njenge-wafer holder kwinkqubo yokusasazwa kobushushu obuphezulu.

Iingenelo:

Ukumelana nobushushu obuphezulu:ukusetyenziswa okuqhelekileyo kwi-1800 ℃

Ukuqhuba okuphezulu kobushushu:ilingana nezinto zegrafayithi

Ubulukhuni obuphezulu:ubulukhuni bulandela idayimani kuphela, i-boron nitride

Ukumelana nokugqwala:i-asidi enamandla kunye ne-alkali azinawo umhlwa kuyo, ukumelana nomhlwa kungcono kune-tungsten carbide kunye ne-alumina

Ubunzima obuphantsi:uxinano oluphantsi, kufutshane ne-aluminium

Akukho tshintsho: i-coefficient ephantsi yokwandiswa kobushushu

Ukumelana noxinzelelo olushushu:inokumelana notshintsho olubukhali lobushushu, imelane noxinzelelo lobushushu, kwaye isebenza kakuhle

Iimpawu Zomzimba zeSiC

Ipropati	Ixabiso	Indlela
Uxinano	3.21 g/cc	Isinki-float kunye nobukhulu
Ubushushu obuthile	0.66 J/g °K	I-pulsed laser flash
Amandla okugobeka	450 MPa560 MPa	Ukugoba kwamanqaku ama-4, ukugoba kwamanqaku ama-4 e-RT4, 1300°
Ukuqina kokwaphuka	2.94 MPa m1/2	Ukuxinana kwe-Microindentation
Ukuqina	2800	Umthwalo kaVicker's, 500g
IiModulus zeElastic zeYoung	450 GPa430 GPa	Ukugoba kwe-4 pt, ukugoba kwe-RT4 pt, 1300 °C
Ubungakanani beenkozo	2 – 10 µm	I-SEM

Iipropati zoBushushu beSiC

Ukuqhuba kweThermal	250 W/m °K	Indlela ye-laser flash, RT
Ukwandiswa kobushushu (i-CTE)	4.5 x 10-6 °K	Ubushushu begumbi ukuya kwi-950 °C, i-silica dilatometer