ỌjaDakosile
Silicon carbide Wafer Boat ti wa ni lilo pupọ bi dimu wafer ni ilana itankale iwọn otutu giga.
Awọn anfani:
Idaabobo iwọn otutu giga:lilo deede ni 1800 ℃
Ga gbona elekitiriki:deede si awọn ohun elo graphite
Lile giga:líle keji nikan si diamond, boron nitride
Idaabobo ipata:acid ti o lagbara ati alkali ko ni ipata si rẹ, ipata resistance jẹ dara ju tungsten carbide ati alumina.
Iwọn iwuwo:kekere iwuwo, sunmo si aluminiomu
Ko si abuku: kekere olùsọdipúpọ ti gbona imugboroosi
Gbona mọnamọna resistance:o le withstand didasilẹ otutu ayipada, koju gbona mọnamọna, ati ki o ni idurosinsin išẹ
Ti ara Properties Of SiC
| Ohun ini | Iye | Ọna |
| iwuwo | 3,21 g/cc | Rin-leefofo ati apa miran |
| Ooru pato | 0,66 J/g °K | Pulsed lesa filasi |
| Agbara Flexural | 450 MPa560 MPa | 4 ojuami tẹ, RT4 ojuami tẹ, 1300 ° |
| Egugun lile | 2,94 MPa m1/2 | Microindentation |
| Lile | 2800 | Vicker ká, 500g fifuye |
| Rirọ ModulusYoung ká Modul | 450 GPa430 GPA | 4 pt tẹ, RT4 pt tẹ, 1300 °C |
| Iwọn ọkà | 2 - 10 µm | SEM |
Gbona Properties Of SiC
| Gbona Conductivity | 250 W/m °K | Lesa filasi ọna, RT |
| Imugboroosi Gbona (CTE) | 4.5 x 10-6 °K | Iwọn otutu yara si 950 °C, silica dilatometer |
